Crystalline silicon solar cell diffusion dead layer removing method

Abstract

The invention provides a crystalline silicon solar cell diffusion dead layer removing method. The method includes the steps of oxidizing a dead layer through a NaClO water solution or a NaBrO4 water solution or an H2O2 alkali solution for a crystal silicon wafer where phosphorosilicate glass is removed, and removing a surface oxidized layer through an HF water solution. By means of the crystalline silicon solar cell diffusion dead layer removing method, it can be ensured that the dead layer can be thoroughly removed, the junction depth is more uniform, and the open-circuit voltage and short-circuit current are increased.

Description

technical field

[0001] The invention relates to a method for removing a diffusion dead layer of a crystalline silicon solar cell, belonging to the technical field of solar cell manufacturing technology. Background technique

[0002] At present, the conventional production process of crystalline silicon solar cells includes: texturing, diffusion, edge etching, dephosphorous silicon glass, coating, printing and sintering.

[0003] Among them, the phosphorus concentration is distributed in steps during diffusion, and the surface concentration is high, exceeding the maximum solid solubility of phosphorus in silicon. Excess phosphorus atoms are precipitated and become a phosphorus-rich layer with a certain thickness. The phosphorus in this area cannot provide electrons as donor impurities. Instead, the lattice mismatch and dislocations will become recombination centers, thereby reducing the minority carrier lifetime. This layer is commonly known as the diffusion dead layer (herei...