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Crystalline silicon solar cell diffusion dead layer removing method

A technology of crystalline silicon solar cells and diffusion dead layer, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of destroying diffusion junctions, unstable efficiency, and difficulty in ensuring uniformity, achieve uniform junction depth, and increase open circuit voltage and the effect of short-circuit current

Inactive Publication Date: 2014-08-20
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There have been attempts to use HNO after dephosphorosilicate glass 3 and HF to remove dead layers, however, HNO 3 The reaction is uncontrollable, the uniformity is difficult to guarantee, and the diffusion junction is often damaged, resulting in unstable or even a significant drop in efficiency; therefore, it is of positive practical significance to develop a method for removing the diffusion dead layer with controllable reaction and good stability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Configure the cleaning solution for removing the dead layer: pure water: 98L, NaClO solution with a mass percent content of 10%: 2kg.

[0017] Soak the polysilicon wafer after removing the phosphorus-silicate glass with the above-mentioned cleaning solution for removing the dead layer, the temperature is 10° C., and the soaking time is 200 s.

[0018] The above-mentioned polycrystalline silicon wafer after removing the dead layer was cleaned with 3% by mass HF aqueous solution, the cleaning temperature was 10° C., and the cleaning time was 300 s.

[0019] The test results of Example 1 are shown in Table 1.

[0020] Table 1

[0021] 　 Average sheet resistance open circuit voltage short circuit current Series resistance fill factor conversion efficiency Before going to the dead layer 89Ω / □ 0.6266V 8.6359A 0.0024Ω 78.56% 17.47% After removing the dead layer 93Ω / □ 0.6280V 8.6536A 0.0025Ω 78.70% 17.58%

Embodiment 2

[0023] Configure dead layer cleaning solution: pure water: 99L, NaBrO 4 : 1kg.

[0024] Soak the single-crystal silicon wafer after removing the phosphorous-silicate glass with the cleaning solution for removing the dead layer, the temperature is 30°C, and the soaking time is 5s.

[0025] The above-mentioned single crystal silicon wafer after removing the dead layer was cleaned with 10% by mass HF aqueous solution, the cleaning temperature was 30° C., and the cleaning time was 5 s.

[0026] The test results of Example 2 are shown in Table 2.

[0027] Table 2

[0028] 　 Average sheet resistance open circuit voltage short circuit current Series resistance fill factor conversion efficiency Before going to the dead layer 73Ω / □ 0.6364V 5.7841A 0.0043Ω 79.58% 18.92% After removing the dead layer 79Ω / □ 0.6369V 5.8591A 0.0053Ω 78.80% 18.99%

Embodiment 3

[0030] Configure the cleaning solution for removing the dead layer: pure water: 94L, NaClO solution with a mass percent content of 10%: 6kg.

[0031] Soak the polysilicon wafer after removing the phosphorus-silicate glass with the cleaning solution for removing the dead layer, the temperature is 25°C, and the soaking time is 20s.

[0032] The above-mentioned polycrystalline silicon wafer after the dead layer was removed was cleaned with 7% by mass HF aqueous solution, the cleaning temperature was 20° C., and the cleaning time was 25 s.

[0033] The test result of embodiment 3 is shown in table 3.

[0034] table 3

[0035] 　 Average sheet resistance open circuit voltage short circuit current Series resistance fill factor conversion efficiency Before going to the dead layer 87Ω / □ 0.6266V 8.5832A 0.0022Ω 78.82% 17.42% After removing the dead layer 90Ω / □ 0.6279V 8.6211A 0.0024Ω 78.77% 17.52%

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Abstract

The invention provides a crystalline silicon solar cell diffusion dead layer removing method. The method includes the steps of oxidizing a dead layer through a NaClO water solution or a NaBrO4 water solution or an H2O2 alkali solution for a crystal silicon wafer where phosphorosilicate glass is removed, and removing a surface oxidized layer through an HF water solution. By means of the crystalline silicon solar cell diffusion dead layer removing method, it can be ensured that the dead layer can be thoroughly removed, the junction depth is more uniform, and the open-circuit voltage and short-circuit current are increased.

Description

technical field [0001] The invention relates to a method for removing a diffusion dead layer of a crystalline silicon solar cell, belonging to the technical field of solar cell manufacturing technology. Background technique [0002] At present, the conventional production process of crystalline silicon solar cells includes: texturing, diffusion, edge etching, dephosphorous silicon glass, coating, printing and sintering. [0003] Among them, the phosphorus concentration is distributed in steps during diffusion, and the surface concentration is high, exceeding the maximum solid solubility of phosphorus in silicon. Excess phosphorus atoms are precipitated and become a phosphorus-rich layer with a certain thickness. The phosphorus in this area cannot provide electrons as donor impurities. Instead, the lattice mismatch and dislocations will become recombination centers, thereby reducing the minority carrier lifetime. This layer is commonly known as the diffusion dead layer (herei...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L21/31111H01L31/1804Y02E10/547Y02P70/50
Inventor 王强章圆圆陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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