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A gallium nitride-based ultraviolet avalanche photodetector

A photodetector, ultraviolet avalanche technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of device cut-off wavelength is not easy to tune and other problems, achieve high lateral carrier mobility, strong polarization effect, high absorption coefficient Effect

Inactive Publication Date: 2016-08-24
SOUTHEAST UNIV
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Problems solved by technology

[0005] However, due to the limitations of layered active regions in controlling the gain mechanism, the performance of GaN-based UV avalanche photodetectors based on layered active regions, such as quantum efficiency, responsivity, carrier ionization coefficient, and avalanche Breakdown voltage threshold, etc., need to be further improved, and the cut-off wavelength of the device is not easy to tune

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  • A gallium nitride-based ultraviolet avalanche photodetector

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the accompanying drawings.

[0022] Such as figure 1 Shown is a gallium nitride-based ultraviolet avalanche photodetector, including a sapphire substrate 101, a low-temperature nucleation layer 102, and an n-type Al composition graded Al x In y Ga 1-x-y N layer 103, Al x1 In y1 Ga 1-x1-y1 N / Al x2 In y2 Ga 1-x2-y2 N multi-quantum well structure absorption region 104, Al composition graded Al x3 In y3 Ga 1-x3-y3 N layer 105 and Al x4 In y4 Ga 1-x4-y4 N / Al x5 In y5 Ga 1-x5-y5 N multiple quantum well structure multiplication region 106, where Al x1 In y1 Ga 1-x1-y1 N / Al x2 In y2 Ga 1-x2-y2 N multi-quantum well structure absorption region 104 and Al x4 In y4 Ga 1-x4-y4 N / Al x5 In y5 Ga 1-x5-y5 The multiplication region 106 of the N multiquantum well structure serves as the absorption region and the multiplication region of the gallium nitride-based ultraviolet avalanche phot...

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Abstract

The invention discloses a GaN-based ultraviolet avalanche photo-detector. The GaN-based ultraviolet avalanche photo-detector is formed by arranging a sapphire substrate, a low-temperature nucleation layer, an n-type Al component gradient AlxInyGa1-x-yN layer, an Alx1Iny1Ga1-x1-y1N / Alx2Iny2Ga1-x2-y2N multi-quantum well structure absorption region, an Al component gradient Alx3Iny3Ga1-x3-y3N layer and an Alx4Iny4Ga1-x4-y4N / Alx5Iny5Ga1-x5-y5N multi-quantum well structure multiplication region in sequence from bottom to top. As a multi-quantum well has the advantages of high absorption coefficients, high transverse carrier mobility, strong polarization effects and the like, the absorption region and the multiplication region of the GaN-based ultraviolet avalanche photo-detector are designed to be of a multi-quantum well structure. In this way, the quantum efficiency and responsivity of the GaN-based ultraviolet avalanche photo-detector can be enhanced, the cut-off wavelength of the photo-detector can be freely tuned, and meanwhile the threshold value of avalanche breakdown voltage can be effectively reduced. Accordingly, important significance is achieved for manufacturing the high-performance ultraviolet photo-detector.

Description

technical field [0001] The invention relates to a GaN-based ultraviolet avalanche photodetector with multiple quantum well structure absorption regions and multiplication regions, belonging to the technical field of semiconductor optoelectronic materials and device manufacturing. Background technique [0002] Gallium nitride-based materials mainly include binary compounds GaN, InN, and AlN of group III and group V elements, ternary compounds InGaN, AlGaN, AlInN and quaternary compounds AlInGaN, which have large band gap, high thermal conductivity, and high temperature resistance. , anti-radiation, acid and alkali resistance, high strength and high hardness and other characteristics, it has a wide range of applications in the fields of high-brightness blue, green, purple, ultraviolet and white light diodes, blue and violet lasers, radiation resistance, high temperature resistance, high-power microwave devices, etc. Application potential and good market prospect. Ternary comp...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0352H01L31/0304
CPCH01L31/03048H01L31/035236H01L31/107
Inventor 张雄杨洪权崔一平
Owner SOUTHEAST UNIV
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