Chemical vapor deposition method for preparing graphene

A chemical vapor deposition and graphene technology, applied in the field of graphene preparation, can solve problems such as loss of electrical conductivity, low graphene quality, and difficulty in reducing graphite, and achieve the effects of less energy consumption, high light transmittance, and low substrate temperature.

Active Publication Date: 2014-10-08
SUZHOU SIDIKE NEW MATERIALS SCI & TECH
View PDF2 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development time of this method is short, and many theoretical and technical problems still cannot be broken through at this stage, and further exploration is needed
The oxidation-reduction method is to oxidize graphite to obtain graphene oxide dispersed in the solution, and then reduce it with a reducing agent to prepare graphene; its cost is low and its yield is high, but it is difficult to completely reduce graphite completely oxi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition method for preparing graphene
  • Chemical vapor deposition method for preparing graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0028] Step 1. Select monocrystalline silicon as the substrate. The monocrystalline silicon substrate is ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 18 to 20 minutes, and then dried in a nitrogen environment. Copper and nickel double-target magnetron co-sputtering method The vacuum degree at the back of the sputtering chamber is 5.0×10 -4 , the argon gas flow rate is 20sccm, the sputtering time is 30min, the sputtering pressure is 1.0Pa, the sputtering power of copper target is 120W, and the sputtering power of nickel target is 90W, and the thickness of 4μm copper-nickel alloy film is prepared on the surface of single crystal silicon ;

[0029] Step 2, the single crystal silicon substrate that the surface is deposited with copper-nickel alloy thin film is transferred in the reaction furnace of chemical va...

Embodiment 2

[0038] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0039] Step 1. Select monocrystalline silicon as the substrate. The monocrystalline silicon substrate is ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 18 to 20 minutes, and then dried in a nitrogen environment. Copper and nickel double-target magnetron co-sputtering method The vacuum degree at the back of the sputtering chamber is 5.0×10 -4 , the argon gas flow rate is 20sccm, the sputtering time is 30min, the sputtering pressure is 1.0Pa, the sputtering power of copper target is 135W, and the sputtering power of nickel target is 90W, and the thickness of 4μm copper-nickel alloy film is prepared on the surface of single crystal silicon ;

[0040] Step 2, the single crystal silicon substrate that the surface is deposited with copper-nickel alloy thin film is transferred in the reaction furnace of chemical va...

Embodiment 3

[0049] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0050] Step 1. Select monocrystalline silicon as the substrate. The monocrystalline silicon substrate is ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 18 to 20 minutes, and then dried in a nitrogen environment. Copper and nickel double-target magnetron co-sputtering method The vacuum degree at the back of the sputtering chamber is 5.0×10 -4 , the argon gas flow rate is 20sccm, the sputtering time is 30min, the sputtering pressure is 1.0Pa, the sputtering power of copper target is 150W, and the sputtering power of nickel target is 90W, and the thickness of 4μm copper-nickel alloy film is prepared on the surface of single crystal silicon ;

[0051] Step 2, the single crystal silicon substrate that the surface is deposited with copper-nickel alloy thin film is transferred in the reaction furnace of chemical va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chemical vapor deposition method for preparing graphene, which comprises the following steps: 1. preparing a copper-nickel alloy film on the monocrystalline silicon surface by a copper/nickel double-target magnetron sputtering process; 2. transferring the monocrystalline silicon substrate, of which the surface is deposited with the copper-nickel alloy film, into a chemical vapor deposition reaction furnace, and introducing helium into the reaction furnace to eliminate air in the reaction furnace; 3. heating the substrate to 400-600 DEG C within 20-40 minutes, and introducing helium until the pressure in the reaction furnace is 5-10 Torr; 4. introducing hydrogen into the reaction furnace, and injecting benzene into the reaction furnace; 5. while keeping the pressure in the reaction furnace at 5-10 Torr, after the benzene injection is finished, stopping introducing the hydrogen, introducing helium into the reaction furnace, cooling the monocrystalline silicon substrate with the copper-nickel alloy film to room temperature at the rate of 20 DEG C/minute, and continuing introducing helium for 10 minutes; and 6. taking out the substrate on which the graphene film is grown.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by chemical vapor deposition. Background technique [0002] Graphene, the monoatomic layer of graphite, is a two-dimensional structure in which carbon atoms are arranged in a honeycomb shape, and is also the basic unit of other low-dimensional carbon materials such as fullerenes and carbon nanotubes. According to the number of layers, graphene can be divided into single-layer graphene, double-layer graphene, and few-layer graphene. Graphene has been studied for a long time, but the truly independent and stable graphene was obtained by Geim et al. from the University of Manchester in the United Kingdom by stripping highly oriented graphite through adhesive tape. Since the discovery of graphene, due to its excellent performance and huge application prospects, it has triggered a research boom in the fields of physics and material science. However, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B31/04
Inventor 金闯杨晓明
Owner SUZHOU SIDIKE NEW MATERIALS SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap