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Low cost clean nondestructive transfer method of large area of graphene

A graphene and large-area technology, applied in the field of graphene transfer, can solve the problems of destroying the structural integrity of graphene, unfavorable for continuous scale transfer, graphene surface pollution, etc., to achieve easy operation, short transfer cycle, avoid pollution effect

Active Publication Date: 2014-11-05
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the transfer of graphene in this method uses thin film materials such as polymers as the transfer medium, and there are many problems in the process of transferring large-area graphene: first, the large-area transfer medium film is easily damaged, thereby destroying the graphene. structural integrity
Second, the transfer medium is difficult to completely remove through subsequent chemical and heat treatment processes, and its residues cause contamination of the graphene surface.
In addition, the associated transfer medium coating and removal steps both increase cost and reduce transfer efficiency, thus detrimental to continuous scale transfer

Method used

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  • Low cost clean nondestructive transfer method of large area of graphene

Examples

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Embodiment 1

[0040] Metal copper foil is used as the initial substrate, polyethylene terephthalate film is used as the target substrate, and electrostatic force is used as the binding force. Graphene is grown on metal copper foil by CVD method (in this embodiment, the metal copper foil can be replaced with copper sheets or copper plates of different specifications, single crystal or polycrystalline, and the thickness is greater than 10 μm). After the copper foil grown with graphene is cooled, use an electrostatic generator to generate electrostatic force on the copper foil (or on the surface of polyethylene terephthalate film) (the voltage for generating static electricity is not less than 0.1kV), and use a roller Copper foil / graphene and polyethylene terephthalate film are pressed together by electrostatic force (pressure less than 1MPa) by pressing or plate pressing. Connect "polyethylene terephthalate / graphene / copper foil" to the negative pole of the constant current power supply, and u...

Embodiment 2

[0042] The difference from Example 1 is:

[0043] The graphene on the growing copper foil and the polyethylene terephthalate film are directly pressed together by roll-to-roll roll pressing (or plate pressing), the pressure is less than 1MPa, and the hot pressing temperature is 100-180°C .

[0044] In this embodiment, the electrolyte is 2mol / L NaOH aqueous solution, the operating temperature of the electrolysis process is 40-50°C, the voltage used in the electrolysis process is 5-10 volts, and the current is 3 amperes; the gas generated by the electrolysis is hydrogen.

Embodiment 3

[0046] The difference from Example 1 is:

[0047] Adopt different materials (in this embodiment, metal copper foil can be changed into foils of metals such as nickel, platinum, ruthenium, iridium and alloys thereof (copper-nickel alloy, molybdenum-nickel alloy, gold-nickel alloy, etc.) Combined metal films, and metal carbides such as titanium carbide, molybdenum carbide, and tungsten carbide, or other semiconductors such as Si) are used as the initial substrate, and graphene is grown on its surface by different methods.

[0048] In this embodiment, the electrolyte is 3 mol / L NaOH aqueous solution, the operating temperature of the electrolysis process is 40-50° C., the voltage used in the electrolysis process is 10-12 volts, and the current is 4 amperes; the gas generated by the electrolysis is hydrogen.

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Abstract

The invention relates to the technology transfer of graphene, and in particular to a low cost clean nondestructive transfer method of large area of graphene. According to the method, a target substrate is used as a structure support layer for graphene transfer, firstly, the large area of graphene on an initial substrate is combined with the target substrate, then the large area of graphene is used as an electrode for nondestructive separation of the graphene and the initial substrate by bubbles generated in the process of electrolysis so as to realize the clean nondestructive transfer of the large area of graphene to the target substrate. The target substrate is used as the structure support layer for graphene transfer, so that the transfer step is simplified, breakage of the large area of graphene in the transfer process can be reduced, the graphene surface contamination caused by use of a transfer medium can be avoided, the combination of the graphene and the target substrate can be realized by a reel-to-reel rolling process, large-scale and continuous transfer is easy to realize; by use of an electrolytic nondestructive separation method, damage to the initial substrate can be avoided, the initial substrate can be repeatedly used, and the cost of transfer can be reduced.

Description

Technical field: [0001] The invention relates to graphene transfer technology, specifically a low-cost, clean and non-destructive transfer method for large-area graphene, using the target substrate as a structural support layer to cleanly and non-destructively transfer large-area graphene from the initial substrate to any target substrate New method, suitable for transferring large-area monolayer, few-layer, or multilayer graphene on the surface of a conductor or semiconductor substrate. Background technique: [0002] Graphene is a two-dimensional honeycomb crystal structure formed by densely packing a single layer of carbon atoms, and is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). The unique crystal structure of graphene makes it have excellent electrical, thermal and mechanical properties, such as: its electron mobility is as high as 200000cm at...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 任文才马来鹏成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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