A processing method for chemical mechanical polishing of tantalum with consolidated abrasive

A technology of consolidating abrasives and processing methods, applied in grinding machine tools, grinding tools, metal processing equipment, etc., can solve the problems of harmful chemicals polluting the environment, uncontrollable surface material removal rate, complicated polishing process of tantalum sheets, etc., to achieve surface High quality, good flattening effect, and reduced post-processing workload and cost

Active Publication Date: 2017-01-25
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to aim at the uncontrollable surface material removal rate when chemical mechanical polishing of tantalum with free abrasives, poor overall planarization effect, complicated process of polishing tantalum sheets with free abrasives, large use of polishing liquid, high processing cost; difficult post-cleaning , a series of problems such as polishing waste liquid and a large number of harmful chemicals in the cleaning process pollute the environment, and a polishing method with high processing efficiency, simple process, and good surface quality is invented; the polishing liquid does not contain abrasives, the post-cleaning is simple, and the processing cost is low. Processing Method of Consolidated Abrasive Chemical Mechanical Polishing of Tantalum

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A kind of processing method of consolidated abrasive chemical mechanical polishing tantalum:

[0020] First prepare the polishing liquid, take 10kg as an example, use 0.1kg fatty alcohol polyoxyethylene ether, 0.05kg tartaric acid, 9.84kg deionized water, and then use an appropriate amount of tetramethylammonium hydroxide (or citric acid, phosphoric acid, ammonia water, ethyl alcohol) diamine, acetic acid, citric acid, ammonia water, hydroxylamine or ethylenediamine) to adjust the pH value of the polishing solution to 8.5 to obtain about 10kg of polishing solution;

[0021] Secondly, the tantalum sheet is polished by using a cerium oxide solidified abrasive polishing pad with a particle size of 3 μm. During the processing, the polishing pressure is controlled to be 21kpa, the rotating speed of the polishing disc is set to 80rpm, the solute composition of the polishing solution is , and the temperature of the polishing solution is set to The temperature is set at 25°C, a...

Embodiment 2

[0023] A kind of processing method of consolidated abrasive chemical mechanical polishing tantalum:

[0024] First, prepare the polishing liquid, taking 10kg as an example, use 0.01kg of alkylphenol polyoxyethylene ether, 0.2kg of sodium ethylenediamine tetramethylene phosphate, 9.79kg of deionized water, and then use an appropriate amount of phosphoric acid (or citric acid, ammonia water) , ethylenediamine, acetic acid, citric acid, ammonia water, hydroxylamine, tetramethylammonium hydroxide or ethylenediamine) to adjust the pH of the polishing solution to 10 to obtain about 10kg of polishing solution;

[0025] Secondly, the tantalum film on the substrate was polished with a cerium oxide solidified abrasive polishing pad with a particle size of 1 μm. During the processing, the polishing pressure was controlled to be 28kpa, the speed of the polishing disc was set to 100rpm, and the temperature of the polishing solution was set to 25°C. The flow rate of the polishing solution w...

Embodiment 3

[0027] A processing method for consolidated abrasive chemical mechanical polishing of tantalum:

[0028] First prepare the polishing liquid, take 10kg as an example, use 0.5kg alkylphenol polyoxyethylene ether, 0.5kg sodium ethylenediamine tetramethylene phosphate, 9.44kg deionized water, and then use an appropriate amount of citric acid (or phosphoric acid, ammonia water, Ethylenediamine, acetic acid, citric acid, ammonia water, hydroxylamine, tetramethylammonium hydroxide or ethylenediamine) to adjust the pH of the polishing solution to 11 to obtain about 10kg of polishing solution;

[0029] Secondly, the tantalum sheet was polished with a cerium oxide solidified abrasive polishing pad with a particle size of 5 μm. During the processing, the polishing pressure was controlled to be 34kpa, the rotational speed of the polishing disc was set to 120rpm, and the temperature of the polishing liquid was set to 25°C. The flow rate was set at 100ml / min. Using this polishing solution ...

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Abstract

The invention discloses a processing method for chemically and mechanically polishing tantalum (Ta) by employing a fixed abrasive. The method is characterized by comprising the following steps: carrying out polishing on tantalum or a tantalum film by adopting a cerium oxide fixed abrasive polishing pad, controlling the polishing pressure to be 10-100kpa in the machining process, and controlling the rotating speed of a polishing disk to be 50-150rpm, wherein the polishing solution is composed of deionized water free of an abrasive, a surfactant, a complexing agent and a pH modifier; adjusting the pH value of the polishing solution to be 8 to 11; controlling the temperature of the polishing solution within a range of 20-30 DEG C, wherein the flow rate of the polishing solution is 80-150ml / min, so that the nano-precision surface roughness can be obtained, and the surface quality is excellent. According to the processing method disclosed by the invention, the processing efficiency and the surface quality of tantalum are improved; the qualified rate of the finished product is high; no environmental pollution is caused; the cleaning is easy and the cost is low.

Description

technical field [0001] The invention relates to a processing method for functional material tantalum (Ta) or tantalum film, especially a chemical mechanical polishing processing method for tantalum material contained in an integrated circuit, in particular a processing method for chemical mechanical polishing of tantalum with a consolidated abrasive. Background technique [0002] With the development of high-tech industries such as networks and communications, the requirements for integrated circuits are getting higher and higher, and the planarization of the entire integrated circuit has become the core. In modern integrated circuits, the feature size is continuously reduced. In the copper multilayer wiring, tantalum is mainly used as a barrier layer, and the etching of each layer must ensure that the entire chip is planarized. The planarization effect directly affects the entire integrated circuit. Performance; at the same time, during processing, the polishing fluid is re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B37/005C09G1/04
CPCB24B37/04B24B37/245C09G1/04
Inventor 李军宋龙龙朱永伟左敦稳黄建东
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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