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A kind of crystalline silicon solar cell and its preparation method

A technology of solar cells and crystalline silicon, applied in the field of solar energy, can solve the problems of low photoelectric conversion efficiency of cells and inability to obtain industrialized production, and achieve the effects of improving photoelectric conversion efficiency, mature equipment technology, and convenient operation

Active Publication Date: 2017-04-05
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention solves the technical problem that the back passivation layer structure adopted in the crystalline silicon solar cell in the prior art causes the cell to have low photoelectric conversion efficiency and cannot obtain industrialized production

Method used

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  • A kind of crystalline silicon solar cell and its preparation method
  • A kind of crystalline silicon solar cell and its preparation method
  • A kind of crystalline silicon solar cell and its preparation method

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preparation example Construction

[0023] The present invention also provides a preparation method for the crystalline silicon solar cell, comprising the following steps:

[0024] S10, performing texturing, diffusion and wet etching on the surface of the silicon substrate, and then coating an anti-reflection film on one surface of the silicon substrate, and polishing the other surface;

[0025] S20. Place the silicon substrate that has passed step S10 in a vacuum coating chamber, and coat a passivation layer on its polished surface by vacuum coating; the target material of the vacuum coating is a metal-doped silicon oxide target, doped The metal is aluminum and / or tin, and the vacuum coating atmosphere contains hydrogen or ammonia;

[0026] S30, forming a back electrode layer on the surface of the passivation layer, and forming a front electrode layer on the surface of the antireflection film, to obtain the crystalline silicon solar cell.

[0027] The preparation method of the crystalline silicon solar cell pr...

Embodiment 1

[0043] (1) A crystalline silicon wafer treated with texturing / diffusion / wet etching / plasma-enhanced chemical vapor deposition (PECVD) and coated with silicon nitride was taken as the silicon substrate of this embodiment, and its size was 156×156 mm, and its The silicon nitride anti-reflection film attached to the surface has a thickness of 120nm. Then chemical polishing is used to polish the silicon surface not coated with silicon nitride anti-reflection film.

[0044] (2) Send the above-mentioned silicon wafer into the preheating chamber, and preheat at 250°C for 20 minutes with an infrared lamp. Send the preheated silicon wafer into the coating chamber, vacuumize the coating chamber first and then fill it with reaction gas until the vacuum degree is 2×10 -3 Pa, when the temperature is 200°C, clean the silicon wafer for 10 minutes, and then perform a pre-sputtering operation on the target. The coating target is silicon oxide doped with aluminum (the aluminum content in the t...

Embodiment 2

[0047] (1) A crystalline silicon wafer treated with texturing / diffusion / wet etching / plasma-enhanced chemical vapor deposition (PECVD) and coated with silicon nitride was taken as the silicon substrate of this embodiment, and its size was 156×156 mm, and its The silicon nitride anti-reflection film attached to the surface has a thickness of 120nm. Then chemical polishing is used to polish the silicon surface not coated with silicon nitride anti-reflection film.

[0048] (2) Send the above-mentioned silicon wafer into the preheating chamber, and preheat at 250°C for 20 minutes with an infrared lamp. Send the preheated silicon wafer into the coating chamber, vacuumize the coating chamber first and then fill it with reaction gas until the vacuum degree is 2×10 -3 Pa, when the temperature is 200°C, clean the silicon wafer for 10 minutes, and then perform a pre-evaporation operation on the target material. The coating target material is silicon oxide doped with aluminum (the alumin...

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Abstract

The invention provides a crystalline silicon solar cell and a preparation method thereof. The crystalline silicon solar cell comprises a front electrode, an antireflection film, a silicon substrate, a passivation layer and a back electrode, wherein the front electrode, the antireflection film, the silicon substrate, the passivation layer and the back electrode are stacked in sequence, the passivation layer is formed through a vacuum coating, the target of the vacuum coating is the metal doped silicon oxide target, doped metal is aluminum and / or tin, and the atmosphere of the vacuum coating contains hydrogen or ammonia gas. According to the crystalline silicon solar cell, the minority carrier lifetime is greatly prolonged, the short-circuit current and the open-circuit voltage of the cell are effectively improved, and therefore the photoelectric conversion efficiency of the crystalline silicon solar cell is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and in particular relates to a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] High efficiency and low cost are two major trends in the development of solar cells today. Through the thinning of silicon wafers, the manufacturing cost of silicon solar cells can be continuously reduced. When the thickness of the silicon wafer is smaller than the diffusion length of the minority carriers, the recombination rate of the cell surface is more important to the efficiency. At the same time, there are dangling bonds on the surface of the silicon wafer due to the interruption of the crystal periodic arrangement, which makes the surface states and interfaces in the crystal energy gap. These will generate space charges on the surface and interface, form surface and interface barriers, and cause energy band bending near the surface and interface, thereby aff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCH01L31/02167H01L31/068H01L31/18Y02E10/547Y02P70/50
Inventor 邓瑞关敬波
Owner BYD CO LTD
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