Organic light-emitting device packaging structure and packaging method thereof
An electroluminescent device and packaging structure technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of loss of absorption capacity of desiccant, decrease of device life, easy to produce cracks, etc., to achieve good step coverage and The effect of large area thickness uniformity, small influence and strong adhesion
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0058] figure 1 It is a schematic diagram of the packaging structure of the organic electroluminescent device in Example 1; as figure 1 Shown, the encapsulation structure of this organic electroluminescent device comprises ITO glass substrate (11), organic luminescence functional layer (12), cathode (13) and thin film encapsulation layer (20); Thin film encapsulation layer (20) comprises 5 by A packaging unit composed of a germanium carbonitride film layer (21) and an inorganic barrier layer (22).
[0059] A method for encapsulating an organic electroluminescent device, comprising the steps of:
[0060] (1) Pre-treatment of ITO glass substrate (11): First, clean the ITO glass with acetone, ethanol, deionized water, and ethanol in sequence, all of which are cleaned with an ultrasonic cleaner. dry, oven dry stand-by; then surface activation treatment is carried out to the cleaned ITO glass, to increase the oxygen content of the conductive surface layer, improve the work functi...
Embodiment 2
[0076] A method for encapsulating an organic electroluminescent device, comprising the steps of:
[0077] (1), (2), (3) are the same as embodiment 1;
[0078] (4) Preparation of thin film encapsulation layer:
[0079] a) Preparation of germanium carbonitride film layer: the germanium carbonitride film layer was prepared on the surface of the cathode by plasma enhanced chemical vapor deposition (PECVD), the working pressure was 10Pa, the deposition temperature was 30°C, and the radio frequency power was 0.1W / cm 2 ; The gas sources used in the process of depositing the germanium carbonitride layer are methylgermane (MMG), ammonia (NH 3 ) and hydrogen (H 2 ), hydrogen (H 2 ) flow rate is 205 sccm, methylgermane (MMG) flow rate is 8 sccm, ammonia (NH 3 ) / methylgermane (MMG) ratio range is 24, germanium carbonitride film thickness is 140nm;
[0080] b) Preparation of inorganic barrier layer: Atomic layer deposition (ALD) was used to prepare an inorganic barrier layer on the ...
Embodiment 3
[0085] A method for encapsulating an organic electroluminescent device, comprising the steps of:
[0086] (1), (2), (3) are the same as embodiment 1;
[0087] (4) Preparation of thin film encapsulation layer:
[0088] a) Preparation of germanium carbonitride film layer: the germanium carbonitride film layer was prepared on the cathode surface by plasma enhanced chemical vapor deposition (PECVD), the working pressure was 50Pa, the deposition temperature was 50°C, and the radio frequency power was 0.5W / cm 2 ; The gas sources used in the process of depositing the germanium carbonitride layer are methylgermane (MMG), ammonia (NH 3 ) and hydrogen (H 2 ), hydrogen (H 2 ) flow rate is 210 sccm, methylgermane (MMG) flow rate is 6 sccm, ammonia gas (NH 3 ) / methylgermane (MMG) ratio range is 21, germanium carbonitride film thickness is 140nm;
[0089] b) Preparation of inorganic barrier layer: Atomic layer deposition (ALD) was used to prepare an inorganic barrier layer on the sur...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com