Organic light-emitting device and preparation method thereof
An electroluminescent device, electroluminescent technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of short service life, poor mechanical strength and high cost
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Embodiment 1
[0083] An organic electroluminescent device is prepared through the following steps:
[0084] (1) Provide a clean anode conductive substrate:
[0085] Clean the ITO glass substrate with acetone, ethanol, deionized water, and ethanol in an ultrasonic cleaner in sequence, wash and wash for 5 minutes in one item, then blow dry with nitrogen, and dry in an oven for later use; surface activation of the cleaned ITO glass processing; ITO thickness is 100nm;
[0086] (2) Vacuum evaporation of the luminescent functional layer on the ITO glass substrate:
[0087] Specifically, the light emitting functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer;
[0088] Preparation of the hole injection layer: The mixture obtained by mixing MoO3 and NPB according to the mass ratio of 1:3 is used as the material of the hole injection layer, the thickness is 10nm, and the vacuum degree is 3×10 -...
Embodiment 2
[0106] An organic electroluminescent device is prepared through the following steps:
[0107] (1), (2), (3) are the same as embodiment 1;
[0108] (4) Prepare the encapsulation layer on the outside of the cathode:
[0109] The encapsulation layer is an alternately laminated silicon oxycarbide barrier layer and an inorganic barrier layer;
[0110] Fabrication of silicon oxycarbide barrier layer: with TMS as the source, N 2 A mixed gas of O and Ar was used to prepare a silicon oxycarbide film in a PECVD deposition chamber to obtain a silicon oxycarbide barrier layer. The preparation process conditions were a TMS flow rate of 25 sccm, a mixed gas flow rate of 50 sccm, and N 2 The volume fraction of O in the mixed gas is 60%, and the thickness of the silicon oxycarbide film produced is 280nm;
[0111] Fabrication of the inorganic barrier layer: the organic electroluminescent device sample prepared with the silicon oxycarbide barrier layer was placed in the deposition chamber of...
Embodiment 3
[0119] An organic electroluminescent device is prepared through the following steps:
[0120] (1), (2), (3) are the same as embodiment 1;
[0121] (4) Prepare the encapsulation layer on the outside of the cathode:
[0122] The encapsulation layer is an alternately laminated silicon oxycarbide barrier layer and an inorganic barrier layer;
[0123] Fabrication of silicon oxycarbide barrier layer: using TEOS as the source, passing through N 2 A mixed gas of O and Ar was used to prepare a silicon oxycarbide film in a PECVD deposition chamber to obtain a silicon oxycarbide barrier layer. The preparation process conditions were TEOS flow rate of 20 sccm, mixed gas flow rate of 20 sccm, N 2 The volume fraction of O in the mixed gas is 40%, and the thickness of the silicon oxycarbide film produced is 250nm;
[0124] Fabrication of the inorganic barrier layer: the organic electroluminescent device sample prepared with the silicon oxycarbide barrier layer was placed in the deposition...
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