A kind of led epitaxy structure and growth method thereof with n-type superlattice structure
An epitaxial structure and superlattice technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of chip process splits, difficult crystal growth quality, etc., to reduce dislocation density, improve antistatic ability, antistatic ability good effect
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[0040] The method for preparing the above-mentioned LED epitaxial structure with an n-type superlattice structure comprises the following steps:
[0041] (1) Put the substrate 1 into the reaction chamber of metal organic chemical vapor deposition (MOCVD) equipment, heat to 1000-1300°C under hydrogen atmosphere, and process for 5-15 minutes;
[0042] (2) Growing a nucleation layer 2 (gallium nitride, aluminum nitride or aluminum gallium nitride) on the treated substrate 1 at a growth temperature of 440-800°C and a thickness of 15-60nm;
[0043] (3) growing a buffer layer 3 (non-doped gallium nitride) on the nucleation layer 2 at a growth temperature of 1000-1200°C and a thickness of 1-2.5 μm;
[0044] (4) growing an n-type structure 4 on the buffer layer 3, including an insertion layer and an n-type GaN layer, or an n-type GaN layer, an insertion layer, and an n-type GaN layer, or an n-type GaN layer and an insertion layer; wherein the insertion layer LD / nAl X In Y Ga 1-X-...
Embodiment 1
[0054] Taking the preparation of an LED structure with an n-type superlattice structure on a silicon carbide substrate by metal-organic chemical vapor deposition as an example, the following steps are included:
[0055] (1) The silicon carbide substrate 1 is placed in the reaction chamber of a metal-organic chemical vapor deposition (MOCVD) device, heated to 1250° C. under a hydrogen atmosphere, and processed for 15 minutes.
[0056] (2) An aluminum nitride nucleation layer 2 is grown on a silicon carbide substrate 1 at a growth temperature of 750° C., a thickness of 45 nm, and a growth pressure of 50 mbar.
[0057] (3) A non-doped gallium nitride buffer layer 3 is grown on the aluminum nitride nucleation layer 2 at a growth temperature of 1100° C., a growth thickness of 2 μm, and a growth rate of 1.9 μm / h.
[0058] An n-type structure 4 is grown on the buffer layer 3 with a thickness of 3.2 μm.
[0059] Growth LD layer (nAl 0.02 Ga 0.98 N) 41, growth time 100s, reaction ch...
Embodiment 2
[0065] Taking the preparation of an LED structure with an n-type superlattice structure on a sapphire substrate by metal-organic chemical vapor deposition method as an example, the following steps are included:
[0066] (1) The sapphire substrate 1 is put into the reaction chamber of the metal organic chemical vapor deposition furnace (MOCVD), heated to 1000° C. under a hydrogen atmosphere, and processed for 20 minutes.
[0067] (2) An AlGaN nucleation layer 2 is grown on a sapphire substrate 1 at a growth temperature of 560° C., a thickness of 120 nm, and a growth pressure of 500 torr.
[0068] (3) A non-doped GaN layer (buffer layer) 3 is grown on the AlGaN nucleation layer 2 at a growth temperature of 1100° C., a growth thickness of 2 μm, and a growth rate of 2 μm / h.
[0069] An N-type GaN layer 4 is grown on the non-doped GaN buffer layer 3 .
[0070] Growth LD layer (nAl 0.02 Ga 0.98 N) 41, growth time 100s, reaction chamber pressure 750torr, growth temperature 700°C, ...
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