Transparent organic light-emitting device and method for manufacturing same
A luminescence and electromechanical technology, applied in the direction of electrical solid devices, semiconductor/solid device manufacturing, electrical components, etc., can solve the problems of low light transmittance, easy cracks, thick transparent devices, etc., and achieve good compactness and uniformity , low deposition temperature and strong adhesion
Image
Examples
Embodiment 1
[0057] figure 1 It is the schematic diagram of the transparent organic electroluminescent device in embodiment 1; figure 1 As shown, the transparent organic electroluminescence device in Example 1 includes an ITO glass substrate (10), an organic light-emitting functional layer (20), a transparent cathode (30) and an encapsulation layer (40) stacked in sequence from bottom to top; The electroluminescent functional layer (20) includes a hole injection layer (21), a hole transport layer (22), a light emitting layer (23), an electron transport layer (24) and an electron injection layer (25) stacked in sequence from bottom to top . figure 2 yes figure 1 Schematic diagram of the structure of the encapsulation layer; such as figure 2As shown, the encapsulation layer (40) includes a mixed barrier layer (41), a first silicon oxynitride film layer (42), an inorganic barrier layer (43) and a second oxygen Silicon nitride film layer (44).
[0058] A method for preparing a transpare...
Embodiment 2
[0075] A method for preparing a transparent organic electroluminescent device, comprising the steps of:
[0076] (1), (2), (3) are the same as embodiment 1;
[0077] (4) Preparation of encapsulation layer:
[0078] a) Preparation of mixed barrier layer: The mixed barrier layer was prepared on the surface of the transparent cathode by vacuum evaporation method, and the vacuum degree was 5Γ10 -5 Pa, the evaporation rate is The mixed barrier layer materials include N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and doped in Vanadium oxide (V 2 o 5 ) and aluminum (Al); vanadium oxide (V 2 o 5 ) is 40% by mole fraction, and aluminum (Al) is 30% by mole fraction; the thickness of the mixed barrier layer is 300nm;
[0079] b) Preparation of the first silicon oxynitride film layer: the first silicon oxynitride film layer was prepared on the surface of the mixed barrier layer by plasma enhanced chemical vapor deposition, the working pressure was 10Pa, the de...
Embodiment 3
[0084] A method for preparing a transparent organic electroluminescent device, comprising the steps of:
[0085] (1), (2), (3) are the same as embodiment 1;
[0086] (4) Preparation of encapsulation layer:
[0087] a) Preparation of mixed barrier layer: The mixed barrier layer was prepared on the surface of the transparent cathode by vacuum evaporation method, and the vacuum degree was 5Γ10 -5 Pa, the evaporation rate is Hybrid barrier materials include 8-hydroxyquinoline aluminum (Alq 3 ) and doped in 8-hydroxyquinoline aluminum (Alq 3 ) in tungsten oxide (WO 3 ) and nickel (Ni); tungsten oxide (WO 3 ) is 30% by mole fraction, nickel (Ni) is 10% by mole fraction; the thickness of the mixed barrier layer is 200nm;
[0088] b) Preparation of the first silicon oxynitride film layer: the first silicon oxynitride film layer was prepared on the surface of the mixed barrier layer by plasma enhanced chemical vapor deposition, the working pressure was 50Pa, the deposition tempe...
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Abstract
Description
Claims
Application Information
- IPC
- H01L51/50; H01L51/52; H01L51/54; H01L51/56
- Inventors
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