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Preparation method of photoelectric thin film material based on biobr/cds heterojunction

A technology of photoelectric thin film and thin film material, which is applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of low photoelectric efficiency of composite thin film solar cells, and achieve improved life, transmission and separation efficiency, low energy consumption, photoelectric Effect of conversion efficiency improvement

Active Publication Date: 2016-02-24
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Previously reported BiOI / TiO 2 Composite thin-film solar cells have low photoelectric efficiency
However, there are no reports about pure BiOBr and BiOBr / sulfide heterostructure photoelectric thin film materials and related solar cell devices.

Method used

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  • Preparation method of photoelectric thin film material based on biobr/cds heterojunction
  • Preparation method of photoelectric thin film material based on biobr/cds heterojunction
  • Preparation method of photoelectric thin film material based on biobr/cds heterojunction

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preparation example Construction

[0024] The preparation method of BiOBr / CdS ordered heterojunction photoelectric thin film material includes the following steps:

[0025] 1) The aqueous solution of bismuth nitrate and potassium bromide is used as the reaction solution, and the dry and clean FTO glass is used as the substrate, and the BiOBr nanosheet array film with 20-90 cycles is prepared by continuous ion layer adsorption;

[0026] 2) Prepare a mixed aqueous solution of 0.9-1.1M ammonia water, 0.9-1.1mM cadmium chloride and 4-6mM thiourea, then place the prepared BiOBr nanosheet array film vertically, and react at 60-80 °C to obtain BiOBr / CdS heterojunction thin film material.

[0027]The invention successfully prepares the network BiOBr thin film material composed of nano flakes (15-20nm thick) on the FTO base material by a simple, fast, mild and green sequential ion deposition method, and then obtains the material by chemical bath deposition method. The ordered BiOBr / CdS nano-network heterostructure pho...

Embodiment 1

[0030] (1) Preparations: Cut the FTO glass into 1.5×2.5cm 2 The rectangle is sonicated with a mixed solution of distilled water and dish soap for 20 minutes, washed with distilled water for 2 to 3 times and then sonicated for 15 minutes, and then put in NH 3 .H 2 O, H 2 O 2 and H 2 O(NH 3 .H 2 O:H 2 O 2 :H 2 (0=1:2:5) in a mixed solution of 80°C for ultrasonic cleaning for 20 minutes, washed with distilled water for 2 to 3 times and then ultrasonicated with absolute ethanol for 15 minutes. Finally, the cleaned FTO glass was placed in a vacuum drying oven to dry. A large amount of 5 mM aqueous bismuth nitrate, 5 mM aqueous potassium bromide was prepared.

[0031] (2) Reaction step: Take two 50ml beakers, add 40ml aqueous solution of bismuth nitrate and 40ml aqueous potassium bromide solution respectively. Use a multimeter to measure the conductivity of the dry and clean FTO, stick the reverse side with tape, and then immerse it in potassium bromide and bismuth nitrate...

Embodiment 2

[0035] (1) Preparations: Cut the FTO glass into 1.5×2.5cm 2 The small squares were sonicated with a mixed solution of distilled water and dish soap for 20 minutes, washed 2 to 3 times with distilled water and then sonicated for 15 minutes, and then put in NH 3 .H 2 O, H 2 O 2 and H 2 O(NH 3 .H 2 O:H 2 O 2 :H 2 (0=1:2:5) in a mixed solution of 80°C for ultrasonic cleaning for 20 minutes, washed with distilled water for 2 to 3 times and then ultrasonicated with absolute ethanol for 15 minutes. Finally, the cleaned FTO glass was placed in a vacuum drying oven to dry. A large amount of 5 mM aqueous bismuth nitrate, 5 mM aqueous potassium bromide was prepared. 40ml of cadmium sulfide precursor solution was prepared, containing a mixed aqueous solution of 1M ammonia, 1mM cadmium chloride and 5mM thiourea.

[0036] (2) Reaction step: Take two 50ml beakers, add 40ml aqueous solution of bismuth nitrate and 40ml aqueous potassium bromide solution respectively. Use a multimete...

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Abstract

The invention discloses a preparation method of a photoelectric thin-film material based on BiOBr / CdS heterojunction. The preparation method comprises the following steps: adopting an aqueous solution of bismuth nitrate and potassium bromide as a reaction liquid, taking dry and clean FTO glass as a substrate, adopting a successive ionic-layer adsorption method to prepare 20-90 circulating BiOBr nano flaky array thin films; preparing a mixed precursor solution with 0.9-1.1M of ammonia water, 0.9-1.1mM of cadmium chloride and 4-6mM of thiourea, then vertically putting the prepared BiOBr nano flaky array thin films, and reacting at the temperature of 60-80 DEG C to obtain the photoelectric thin-film material based on the BiOBr / CdS heterojunction. The preparation method disclosed by the invention has the advantages that a series of problems of particle aggregation, microstructure damage, impurity introduction, high-temperature annealing, poor mechanical stability, high dropping possibility and the like caused in the traditional film-forming process are overcome; the service life of photon-generated carriers can be effectively prolonged and the transmission and separation efficiency can be improved, so that the photoelectric conversion efficiency is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, and relates to a preparation method of a BiOBr / CdS ordered heterostructure optoelectronic thin film material. Background technique [0002] Bismuth oxyhalide (BiOX, X=F, CI, Br, I) is a new type of semiconductor material with unique electronic structure, good optical properties and catalytic properties. Density functional theory (DFT) calculation results show that only BiOF in the BiOX series of bismuth oxyhalide is a direct bandgap semiconductor, and BiOCI, BiOBr and BiOI are indirect transition bandgap semiconductors. BiOX is a tetrafluoro leadite structure, and its crystal structure can be regarded as along the [001] direction, the double X atomic layer and the [Bi 2 O 2 ] Layers are alternately arranged to form a layered structure. [0003] The valence band is mainly O 2p and X np (for F, CI, Br and I, n is 2, 3, 4 and 5, respectively) Occupied, the conduction band is ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0336
CPCY02P70/50
Inventor 贾会敏张贝贝何伟伟王伟杰郑直
Owner XUCHANG UNIV