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A kind of manufacturing method of terahertz waveguide passive device

A technology for passive devices and manufacturing methods, applied in waveguide-type devices, electrical components, circuits, etc., can solve the problems of inability to meet the accuracy requirements of modern devices, large dielectric loss and radiation loss, and high processing accuracy requirements. Application Prospects, Effects of Low Dielectric and Radiation Losses, High Power Capacity

Inactive Publication Date: 2017-08-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Traditional substrate-supported microstrip or coplanar waveguide passive devices have the disadvantages of large dielectric loss and radiation loss, which are limited below submillimeter-wave frequencies
Waveguide passive devices still have the advantages of low loss, high Q value, and high power capacity in the terahertz frequency band. Since the wavelength of short millimeter to submillimeter waves is reduced to submillimeter or even close to the wavelength of light waves, the size of electronic devices must be greatly increased. The reduction requires high processing precision, and the traditional precision machining method can no longer meet the precision requirements of modern devices.

Method used

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  • A kind of manufacturing method of terahertz waveguide passive device
  • A kind of manufacturing method of terahertz waveguide passive device
  • A kind of manufacturing method of terahertz waveguide passive device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1, the silicon wafer raw material that adopts is 0.5mm thick, and the standard is inch (about 101.6mm) silicon wafer.

[0054] The manufacturing method of the terahertz waveguide passive device adopted in this embodiment includes the following steps:

[0055] S1. Preparation: Prepare two silicon wafers and clean them; the cleaning method for the silicon wafers is:

[0056] S101, using 98% H 2 SO 4 and 30%H 2 o 2 The solution prepared in a ratio of 4:1 was heated to a temperature of 110°C for the first cleaning, and the cleaning was carried out for 7 minutes;

[0057] S102, using 27% NH 4 OH, 30%H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:5, and the heating temperature is 75°C for the second cleaning, cleaning for 7 minutes;

[0058] S103, using 37% HCl, 30% H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:7, the heating temperature is 75°C, and the third cleaning is performed for 7 minutes;

[0059] S2. Thermal oxidatio...

Embodiment 2

[0075] Embodiment 2, the silicon wafer raw material that adopts is 0.5mm thick, and the standard is inch (about 101.6mm) silicon wafer.

[0076] The manufacturing method of the terahertz waveguide passive device adopted in this embodiment includes the following steps:

[0077] S1. Preparation: Prepare two silicon wafers and clean them; the cleaning method for the silicon wafers is:

[0078] S101, using 98% H 2 SO 4 and 30%H 2 o 2 The solution prepared in a ratio of 4:1 was heated to a temperature of 120°C for the first cleaning, and the cleaning was performed for 10 minutes;

[0079] S102, using 27% NH 4 OH, 30%H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:5, and the heating temperature is 80°C for the second cleaning, and the cleaning is for 10 minutes;

[0080] S103, using 37% HCl, 30% H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:7, the heating temperature is 80°C, and the third cleaning is performed for 10 minutes;

[0081] S2. Ther...

Embodiment 3

[0097] Embodiment 3, the silicon wafer raw material that adopts is 0.5mm thick, and the standard is inch (about 101.6mm) silicon wafer.

[0098] The manufacturing method of the terahertz waveguide passive device adopted in this embodiment includes the following steps:

[0099] S1. Preparation: Prepare two silicon wafers and clean them; the cleaning method for the silicon wafers is:

[0100] S101, using 98% H 2 SO 4 and 30%H 2 o 2 The solution prepared in a ratio of 4:1 is heated to a temperature of 100°C for the first cleaning, and the cleaning is performed for 5 minutes;

[0101] S102, using 27% NH 4 OH, 30%H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:5, and the heating temperature is 60°C for the second cleaning, cleaning for 5 minutes;

[0102] S103, using 37% HCl, 30% H 2 o 2 and H 2 O is a solution prepared in a ratio of 1:1:7, the heating temperature is 60°C, and the third cleaning is performed for 5 minutes;

[0103] S2. Thermal oxidation: t...

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Abstract

The invention provides a method for manufacturing a terahertz waveguide passive device, comprising the following steps: S1, preparing a chip; S2, thermal oxidation; S3, dehydrating and baking and adding a primer film; S4, coating photoresist; The solvent content in the resist is reduced to 4% to 7%; S6, align the photolithography mask with the silicon wafer; S7, adopt scanning step projection exposure; S8, medium baking; S9, dissolve it with a developer Photoresist in the exposed area; S10, completely evaporate the solvent of the photoresist; S11, microscope inspection; S12, perform deep reactive ion etching on the part of the silicon wafer not covered by the photolithographic mask; S13, remove the glue; S14 , metallization; S15, bonding two silicon wafers; S16, cutting waveguide passive device unit; S17, end face metallization. The device manufactured by the invention has the advantages of high operating frequency, small dielectric loss and radiation loss, easy manufacture, strong versatility and the like.

Description

technical field [0001] The invention belongs to the field of manufacturing methods of terahertz waveguide passive devices, and in particular relates to a manufacturing method of terahertz waveguide passive devices based on bulk silicon etching technology in the 0.3-1.0 THz frequency band. Background technique [0002] The frequency band of terahertz waves is within the range of 0.3-3.0 THz, which is located between the microwave and infrared bands in the electromagnetic spectrum. Terahertz science is an interdisciplinary science sandwiched between electronics and optics. The long-wave direction mainly relies on electronics science and technology, and the short-wave direction mainly relies on photonics science and technology. It can be seen that terahertz waves occupy a very special position in the electromagnetic spectrum, and their research has extremely important academic value and application prospects. The unique properties of terahertz give communication (broadband com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P11/00
Inventor 胡江郑中万张勇刘双周扬帆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA