GaN-based low leakage current clamped beam switch field effect transistor NOR gate

Abstract

The invention relates to a GaN-based low leakage current clamped beam switch field effect transistor NOR gate, which is composed of two N-type MESFETs (metal semiconductor field effect transistors) with a clamped beam switch, that is, a first field effect transistor (1) and a second field effect transistor (2), and a load resistor (3), wherein source electrodes of the first field effect transistor (1) and the second field effect transistor (2) are connected and grounded together, drain electrodes of the first field effect transistor (1) and the second field effect transistor (2) are also connected together and connected to a power supply VCC through the resistor (3), a first input signal (A) and a second input signal (B) are inputted on the clamped beam switches (5) of the first field effect transistor (1) and the second field effect transistor (2) through anchor areas (7) respectively, and output signals are outputted between drain electrodes of the first field effect transistor (1) and the second field effect transistor (2) and the load resistor (3). The NOR gate provided by the invention has the significant advantages of small size, easy integration, low power consumption, high switching speed and the like.

Description

technical field [0001] The invention provides a gallium nitride-based low-leakage current solid-supported beam switch MESFET (metal-semiconductor field effect transistor) NOR gate, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] Microelectronics technology has greatly dragged the pace of human beings into the information age. With the further development of microelectronics technology, the world has entered the era of mobile Internet, followed by higher requirements for wireless communication technology. Traditional silicon Based devices can no longer meet the requirements of high frequency, high efficiency and high temperature resistance, so various new devices and semiconductor materials are constantly being proposed. Transistors made of gallium nitride materials have high electron mobility, strong radiation resistance, and a large operating temperature range. GaN field effect transistors can be used in high frequency...

AI Technical Summary

Problems solved by technology

Nowadays, the size of transistors has developed to the nanometer level, and the integration degree of the corresponding integrated circuit unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid, and the processing speed of the chip is getting higher and higher. ; Followed by the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, And it will affect the stability of the chip

Images