Highly-matched crystal orientation stacked structure of graphene and hexagonal boron nitride and preparation method of highly-matched crystal orientation stacked structure

Abstract

The invention provides a highly-matched crystal orientation stacked structure of graphene and hexagonal boron nitride and a preparation method of the highly-matched crystal orientation stacked structure. The method includes the steps that a primary stacked structure of the graphene and the hexagonal boron nitride is formed; the primary stacked structure is subjected to heat treatment to obtain the highly-matched crystal orientation stacked structure of the graphene and the hexagonal boron nitride. On the basis that the graphene rotates on a hexagonal boron nitride crystal during heat treatment, crystal orientation match of the graphene and the hexagonal boron nitride is facilitated, and a graphene and boron nitride stacked structure with perfectly-matched crystal orientation is obtained. The method avoids the uncertainty existing in a mechanical alignment mode in the prior art; besides, boundary crystal orientation of the graphene and boundary crystal orientation of the hexagonal boron nitride are unrelated, and even if graphene and hexagonal boron nitride with irregular boundary can achieve high match. Besides, according to the method, the machining and control technology is mature, and the method is suitable for the stacked structure of the grapheme and the hexagonal boron nitride and can extend to preparation of other similar structures, such as a graphene and graphite system.

Description

technical field [0001] The invention relates to the field of nanotechnology, in particular to a stacked structure of graphene / hexagonal boron nitride with high crystal direction matching and a preparation method thereof. Background technique [0002] Graphene has many excellent properties as a two-dimensional carbon material. Since it was prepared by scientists from the University of Manchester in 2004 (Science 306, 666 (2004)), many properties of graphene have gradually been understood. Graphene can be suspended or attached to the substrate by van der Waals forces, and the properties of graphene on various substrates show significant differences, illustrating the importance of the substrate for this atomically thin material . [0003] Hexagonal boron nitride has an atomically flat surface with almost no dangling valence bonds and extremely low doping charge density, showing its great potential as a graphene substrate. Up to 60,0000 cm 2 V -1 the s -1 mobility and the q...

AI Technical Summary

Problems solved by technology

[0004] The graphene / hexagonal boron nitride stack structure obtained by the mechanical transfer method usually has a random crystal orientation, and it is difficult to control the relative angle of the transfer to achieve crystal orientation matching

The method of controlling the relative angle during transfer is limited to graphene and boron nitride with regular boundaries, but cannot be used for graphene and boron nitride with irregular boundaries. Therefore, the mechanical transfer method has great limitations , especially for graphene that has been mechanically transferred to the surface of boron nitride, due to contamination and wrinkles, it is difficult to change the crystal orientation after transfer

[0005] The epitaxial growth method is to grow graphene epitaxially on the surface of boron nitride, generally by plasma chemical vapor deposition, although the graphene / hexagonal boron nitride stack structure obtained by this method has perfect crystal orientation matching, but in deposition and nucleation It is easy to cause unevenness in the process, and the grown graphene has many defects, which will inevitably have an adverse effect on the performance of the material.

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