A kind of capacitive strain sensor and preparation method thereof

A sensor and capacitor technology, applied in the field of capacitive strain sensor and its preparation, can solve the problems of unfavorable control of the quality of dielectric materials, low strain and temperature, large dielectric loss, etc., and achieve accurate line width, high strain sensitivity, and low temperature. The effect of coefficients

Active Publication Date: 2019-07-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

K.I.Arshak et al. (K.I.Arshak, D.McDonagh, M.A.Durcan, Development of new capacitance strain sensors based on thick filmpolymer and cermet technologies, Sens.Actuators A: Phys.79(2000) 102-114) lead zirconate titanate (PZT ) and polyvinylidene fluoride (PVDF) as the dielectric material to prepare a capacitive strain sensor, which has the following defects: the strain and temperature it can withstand are low, the maximum strain it can withstand is 350με, and the maximum operating temperature is 85 ° C; its The dielectric material is prepared by screen printing method, so that the film thickness is too large, and it is easy to fall off when the internal stress is too high at high temperature; the electrode uses Heraeus conductor C12121S, which limits the application of the strain sensor at high temperature; the structure of the sensor is parallel The plate capacitor structure is not conducive to controlling the quality of the dielectric material, making the dielectric loss too large and the process complicated

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  • A kind of capacitive strain sensor and preparation method thereof
  • A kind of capacitive strain sensor and preparation method thereof
  • A kind of capacitive strain sensor and preparation method thereof

Examples

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Embodiment 1

[0032] A preparation method of a capacitive strain sensor based on alumina ceramics, comprising the following steps

[0033] Step 1. Surface treatment of alumina substrate: use 1.25×1.25cm 99.9% alumina substrate as the substrate, successively use acetone, ethanol and deionized water to clean the substrate, and dry it with clean nitrogen after cleaning. ;

[0034] Step 2, depositing the first Ba on the alumina substrate 0.5 Sr 0.5 TiO 3 Dielectric film: put the alumina substrate cleaned in step 1 in a vacuum of 8.0×10 -4 Pa vacuum (back vacuum) environment, in Ba 0.5 Sr 0.5 TiO 3 Ceramic as the target material, argon gas with a purity of not less than 99.9% and 99.5% oxygen with a flow ratio of 4:1 as the reaction medium, at a temperature of 750°C, a power of 200W, and an air pressure of 2Pa, in alumina Deposit Ba with a thickness of 1 μm on the ceramic substrate 0.5 Sr 0.5 TiO 3 ceramic film;

[0035] Step 3, preparation of patterned PdCr interdigital electrodes: p...

Embodiment 2

[0051] A method for preparing a capacitive strain sensor based on an alloy, comprising the following steps:

[0052] Step 1. Surface treatment of the substrate: first, polish the surface of the alloy substrate, and the polished surface is a mirror surface; then ultrasonically clean it in acetone, ethanol and deionized water for 10 minutes respectively, and dry it with clean nitrogen after cleaning;

[0053] Step 2. Prepare a NiCrAlY transition layer on the surface of the substrate cleaned in step 1: In order to improve the service life of the strain sensor in harsh environments and make the film have good adhesion, prepare a layer of transition layer NiCrAlY on the surface of the alloy substrate; The clean alloy substrate is placed in a vacuum of 8.0×10 -4 Pa vacuum (back vacuum) environment, with Ni 67 Cr 22 Al 10 Y alloy is used as the target material, and argon gas with a purity of 99.999% (volume percentage) is introduced as the sputtering medium. Under the conditions o...

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Abstract

The invention provides a capacitive strain sensor and a preparation method thereof, which belong to the technical field of sensor design and production. The capacitive strain sensor consists of a substrate, a first barium strontium titanate dielectric film layer, a PdCr electrode layer, a second barium strontium titanate dielectric film layer, and an Al strontium barium titanate dielectric film layer from bottom to top. 2 o 3 The protective layer, wherein the PdCr electrode layer is an interdigitated electrode structure. The present invention adopts the planar structure of interdigitated capacitance, and barium strontium titanate (Ba 0.5 Sr 0.5 TiO 3 ) as the dielectric material, PdCr as the electrode material, and the preparation technology of magnetron sputtering coating and photolithography technology are used to realize the higher temperature (500℃) of the capacitive strain sensor under the larger strain (2500με). The purpose of stabilizing work.

Description

technical field [0001] The invention belongs to the technical field of sensor design and production, and in particular relates to a capacitive strain sensor and a preparation method thereof. Background technique [0002] Strain sensors play an important role in the study of mechanical properties and mechanical behavior of various components. At present, there are many types of strain sensors such as wire type, foil type, thin film type, metal, semiconductor, etc., most of which are based on the piezoresistive effect, that is, the resistance changes proportionally with the change of strain. Due to the high temperature requirements of the engine, nuclear power and other fields, the shortcomings of the application of resistive strain sensors at high temperatures are becoming more and more obvious, and the errors and reliability problems caused by high temperatures have become a huge challenge. The capacitive strain sensor is based on the change of the capacitance of the device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/16
Inventor 蒋书文任帅张万里李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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