CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and manufacturing method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 厦门神科太阳能有限公司
- Publication Date
- 2015-11-04
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Abstract
Description
technical field
[0001] The invention relates to the technical field of thin-film solar cells, in particular to a CIGS-based thin-film solar cell and a preparation method thereof. Background technique
[0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a P-type semiconductor material with a direct band gap, and its absorption coefficient is as high as 105 / cm. A 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin film is continuously adjustable from 1.04eV to 1.67e...