CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and manufacturing method thereof

A solar cell and manufacturing method technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low efficiency, reduced conversion efficiency of thin-film solar cells, and reduced photoelectric conversion efficiency, so as to reduce production costs and reduce efficiency. , the effect of reducing reflections
CN105023958AActive Publication Date: 2015-11-04厦门神科太阳能有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
厦门神科太阳能有限公司
Publication Date
2015-11-04

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Abstract

The invention provides a CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and a manufacturing method thereof. The CIGS-based thin-film solar cell comprises a substrate, a back electrode layer covering the surface of the substrate, a light absorption layer covering the back electrode layer, a buffer layer covering the light absorption layer, a transparent conducting layer covering the buffer layer, and an aluminum oxynitride silicon film layer covering the transparent conducting layer, or a composite film layer alternatively constructed by a zinc oxide silicon film layer and a silicon oxynitride film layer. Through the aluminum oxynitride silicon film layer or the composite film layer, external water molecules can be effectively prevented from entering the thin-film cell, and the decreasing degree of the efficiency of the thin-film solar cell is reduced. Meanwhile, an anti-reflection effect can be achieved, and the light absorption layer through which incident light reaches the cell is added, so that the short-circuit current of the thin-film cell can be increased.
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Description

technical field

[0001] The invention relates to the technical field of thin-film solar cells, in particular to a CIGS-based thin-film solar cell and a preparation method thereof. Background technique

[0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a P-type semiconductor material with a direct band gap, and its absorption coefficient is as high as 105 / cm. A 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin film is continuously adjustable from 1.04eV to 1.67e...

Claims

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