High-medium single-layer miniature ceramic capacitor substrate material and preparation method thereof

Abstract

The invention provides a high-medium single-layer miniature ceramic capacitor substrate material. Raw materials comprise main ingredients and doping agents. Chemical components of the main ingredients are SrTiO3. The doping agents are composed of, by mass, mwt% of Nb2O5, nwt% of SiO2, pwt% of Y2O3, qwt% of CaSnO3 and rwt% of composite oxide additives. The preparation method includes batching, ball-milling, drying, pelleting, forming, glue discharging, reduction atmosphere sintering and oxidation heat treatment. No Pb, Cd or other volatile or heavy metal elements are contained in the formula of the high-medium single-layer miniature ceramic capacitor substrate material, and the high-medium single-layer miniature ceramic capacitor substrate material is an environment-friendly and pollution-free medium ceramic material. The sintering temperature of ceramic is 1340-1400 DEG C, the dielectric constant is high, and a certain energy-saving advantage is achieved; the raw materials are sufficiently supplied at home, price is low, and the high-medium single-layer miniature ceramic capacitor substrate material is suitable for manufacturing high-performance communication components in the modern communication technology.

Description

technical field [0001] The invention belongs to the technical field of electronic information functional materials, and relates to a single-layer capacitor dielectric ceramic material, in particular to a high-performance single-layer micro capacitor that can realize functions such as DC blocking, RF bypass, active bypass, filtering, impedance matching, and coplanar waveguide. Capacitor dielectric ceramic material. Background technique [0002] With the rapid development of microwave communication technology, microwave electronic devices are widely used in military and civilian fields, such as microwave integration in microwave circuits of radar, missile remote control, satellite communication, positioning, TV satellite receiver, wireless local area and other systems, High-precision capacitors are required for DC blocking RF bypass, RF bypass, source bypass, matching network, and decoupling circuit. High-dielectric single-layer miniature single-layer ceramic capacitors (SLC)...

AI Technical Summary

Problems solved by technology

However, at present, the convenience of materials in this system mainly has the following problems: (1) The sintering temperature is very high (above 1450°C), and the grains tend to grow abnormally after firing, resulting in poor uniformity of material properties

(2) The complex sintering process tends to make the surface of thin components rough, deformed, and the structure is not dense, making it difficult to achieve thinner materials

(3) The capacitance temperature characteristics of the material are difficult to meet the requirements of the X7R series standard, and it is necessary to improve its capacitance temperature characteristics from various aspects to make the capacitance change rate △C / C 25℃ (-55℃~125℃)≤±15%

(4) When modifying, volatile and heavy metal elements such as Pb are often used to obtain better performance, which is not friendly to the environment

For example, "a kind of high dielectric SrTiO with single low-temperature firing" published in "Materials Letters" in 2002 3 Grain boundary layer capacitor material" (Ahigh-permittivitySrTiO 3 -basedgrainboundarybarrierlayercapacitormaterialsingle-firedunderlowtemperature), the text shows that when using Nb 2 o 5 、Bi 2 o 3 -3TiO 2 When doped with LiF, SrTiO with a grain size of about 5um 3 The sintering temperature of grain boundary layer capacitor ceramics is reduced to 1200°C, and the effective dielectric constant can reach 370,000, but its loss reaches 4%, the insulation performance is poor, and the temperature characteristics can only be kept stable at 20–150°C

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