Method for metalizing beryllium oxide ceramic

A beryllium oxide ceramic and metallization technology, which is applied in the field of electronic functional ceramic materials, can solve the problems of unsatisfactory metallization effect, limited printing process, difficult to meet requirements, etc. Effect

Active Publication Date: 2016-01-13
宜宾红星电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The one-time sintering method is very suitable for substrates and plate-shaped beryllium oxide ceramics. However, the printing process for cylindrical or special-shaped beryllium oxide ceramics is greatly limited, and the thickness of the metallization layer of porcelain cylinders is required to be between 30 and 70 μm. One-time sintering is often difficult to meet the requirements. Multiple sinterings will a

Method used

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  • Method for metalizing beryllium oxide ceramic

Examples

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Comparison scheme
Effect test

Embodiment 1

[0054] Take by weighing 500g of alumina, 420g of silicon dioxide, 50g of calcium carbonate and 30g of barium carbonate, put the above-mentioned raw material powder into a ball mill, weigh 1kg of alcohol, Put 2kg of alumina ceramic balls into the ball mill and mill for 12 hours. Pour the slurry into a stainless steel basin, put it in an oven at 80°C, and dry it to make a metallized slurry additive for later use.

[0055] Weigh 2kg of newly purchased tungsten powder, put it into the ball mill, and then put it into Alumina ceramic balls 3kg, alcohol 2kg, wet ball milling for at least 72 hours, take out the ceramic balls with a sieve and dry them for later use.

[0056] Weigh 760g of terpineol, 32g of ethyl cellulose and 8g of castor oil in a jar, put them in an oven at 100°C, bake for 4 hours, stir with a glass rod, and pass through 250 mesh after the ethyl cellulose is completely dissolved. The screen, prepared as adhesive, is poured into a new jar for later use.

[0057] P...

Embodiment 2

[0060] Take by weighing 550g of alumina, 370g of silicon dioxide, 80g of calcium carbonate and 20g of barium carbonate, put the above-mentioned raw material powder into a ball mill, weigh 1kg of alcohol, Add 2 kg of agate ceramic balls into the ball mill and mill for 18 hours. Pour the slurry into a stainless steel basin, put it in an oven at 80°C, and dry it to make a metallized slurry additive for later use.

[0061] Take by weighing prepared metallization slurry additive 80g, manganese powder 40g and embodiment 1 prepared tungsten powder 280g, then add 400g of beryllium oxide ceramic balls were ball-milled in a vibrating ball mill for 8h, and the beryllium oxide ceramic balls were filtered out with a sieve, and the powder was weighed to obtain 392g of metallized powder. Put the metallized powder and 20g of iridium oxide into a mortar, weigh 155g of the binder and mix it with the metallized powder and iridium oxide, stir with a glass rod for 20 minutes, transfer the slurr...

Embodiment 3

[0064] Take by weighing 500g of alumina, 420g of silicon dioxide, 50g of calcium carbonate and 50g of barium carbonate, put the above-mentioned raw material powder into a ball mill, weigh 1kg of alcohol, Add 2 kg of agate balls into the ball mill and mill for 24 hours. Pour the slurry into a stainless steel basin, put it in an oven at 80°C, and dry it to make a metallized slurry additive for later use.

[0065] Take by weighing prepared metallization slurry additive 120g, manganese powder 30g and embodiment 1 prepared tungsten powder 250g, then add 400g of beryllium oxide ceramic balls were ball-milled in a vibrating ball mill for 4 hours, and the beryllium oxide ceramic balls were filtered out with a sieve, and the powder was weighed to obtain 380g of metallized powder. Put the metallized powder and 19g of iridium oxide into a mortar, weigh 148g of the binder and mix it with the metallized powder and iridium oxide, stir with a glass rod for 20 minutes, transfer the slurry ...

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Abstract

The invention belongs to the technical field of electronic functional ceramic materials, and in particular relates to a method for metalizing beryllium oxide ceramic. The technical problem solved by the invention is to provide the method for metalizing the beryllium oxide ceramic. The method comprises the following steps: A, preparing a metalizing sizing material additive by adopting raw materials of Al2O3, SiO2, CaCO3 and BaCO3 and a ball milling process; B, adding tungsten powder and manganese powder into the metalizing size additive, and performing ball milling to obtain metalizing powder; C, adding an active agent Y2O3 and a binding agent, and performing vibro-milling filtration to obtain a metallization sizing material; and D, performing metallization sintering. By adopting the metallization method provided by the invention, the sizing material sintering temperature is low, a single-sintering metallization layer is thick and can be sintered for multiple times, and energy consumption is reduced; moreover, the metallization layer after nickel plating has the characteristics of being good in stripping effect, high in stripping strength, high in tensile strength and the like, not only can meet metallization requirements of 99% of the beryllium oxide ceramic but also can meet requirements of 97% of beryllium oxide ceramic and beryllium oxide based attenuation ceramics, and is wide in application range.

Description

technical field [0001] The invention belongs to the technical field of electronic functional ceramic materials, and in particular relates to a metallization method for beryllium oxide ceramics. Background technique [0002] Beryllium oxide ceramics have always been an important part of electronic devices in national defense equipment. In the selection of structural materials for the production of electronic components in my country, with the development of high-power and miniaturized electronic components, beryllium oxide ceramics have good thermal conductivity, high flexural strength, low dielectric constant, low dielectric loss, and high insulation. performance and can be welded and sealed with metals, etc., and are widely used in military communications, remote sensing, electronic countermeasures, photoelectric technology and other fields, becoming microelectronic devices (thick, thin film circuits, high-power semiconductor devices), optoelectronic devices ( Infrared detec...

Claims

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Application Information

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IPC IPC(8): C04B41/88
Inventor 王刚林贵洪尚华任鹏道刘志文毛晋峰
Owner 宜宾红星电子有限公司
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