Preparation of 248 nm deep ultraviolet photoresist film forming resin based on RAFT polymerization method

A technology of deep ultraviolet light and film-forming resin, which is applied in the direction of photosensitive materials, optics, and optomechanical equipment used in optomechanical equipment. And molecular weight, simple polymer structure and other issues, to achieve the effect of increasing light transparency, improving solubility, and broadening the application field
CN105237669AActive Publication Date: 2016-01-13SUZHOU RUIHONG ELECTRONIC CHEM CO LTD +1
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
Publication Date
2016-01-13

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Abstract

The present invention discloses preparation of a 248 nm deep ultraviolet photoresist film forming resin based on a RAFT polymerization method, and belongs to the field of deep ultraviolet photoresists. According to the photoresist film forming resin, mainly 2-(dodecyl trithiocarbonate-yl)-2-methylpropanoic acid is adopted as a RAFT reagent, 4-acetoxy styrene, styrene, tert-butyl acrylate and 2-methyl-2-methacrylic acid adamantine ester are adopted as copolymerization monomers, 1-methoxy-2-propyl acetate is adopted as a reaction solvent to carry out solution polymerization under the condition of a free radical initiator so as to synthesize a low molecular weight distribution copolymer, a certain amount of sodium methoxide and methanol are added to carry out alcoholysis so as to obtain the copolymer having high transparency at 248 nm, and the copolymer is finally applied in the 248 nm photoresist. According to the present invention, the preparation is simple, the reaction conditions are mild, the molecular weight distribution of the obtained copolymer is narrow, the molecular weight can be well controlled, and the resin is suitable for 248 nm deep ultraviolet exposure.
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Description

technical field

[0001] The invention relates to the field of functional polymer materials, in particular to a RAFT method for preparing a copolymer with controllable molecular weight and distribution, which is applied to the field of 248nm deep ultraviolet photoresist. Background technique

[0002] Photoresist, also known as photoresist, plays an important role in the microelectronics industry. It can be used to transfer circuit patterns to substrates to prepare microelectronic circuits by means of changes in its dissolution properties before and after exposure.

[0003] Photoresist is mainly a light-sensitive mixed liquid composed of three main components: photosensitive resin, photosensitive agent and solvent. After the photosensitive resin is exposed to light, a chemical reaction can quickly occur in the exposed area, which makes the physical properties of the material, especially the solubility, change significantly. After appropriate development treatment, the soluble ...

Claims

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