Optical-up converter capable of achieving conversion from near infrared light to visible light and preparation method thereof
A visible light and near-infrared technology, applied in the field of infrared imaging, can solve the problems of unsatisfactory infrared imaging, complex process, easy distortion, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022]Si-based Ge quantum dots are used as crystalline Ge materials. The general steps for growing Si-based Ge quantum dots by ion beam sputtering are: (1) grow a 50nm Si buffer layer at a temperature of 700°C on an n-type heavily doped Si(001) substrate with a thickness of about 500 μm; ( 2) Deposit 2.3nm Ge again, and Ge atoms form Ge quantum dots according to the pattern of first layered and then island growth; (3) Re-grow a 30nm Si isolation layer; (4) Repeat steps (2) and (3) to obtain Multilayer Ge quantum dots with a period number of N layers; (5) Finally, a 200nm p-type Si layer is grown on the multilayer Ge quantum dots to form a p-i-n structure Ge quantum dot infrared detector as a whole. Among them, for the three-dimensional surface topography of single-layer Ge quantum dots grown on n-type Si substrates according to the above growth parameters, please refer to the attached Figure 5 (a).
[0023] A layer of 200nm thick SiO is directly grown on the p-i-n structure...
Embodiment 2
[0034] A Si-based Ge thin film is used as the crystalline Ge material. Among them, the Si(100) substrate is heavily doped with n-type, and its thickness is about 500 μm. The Si-based Ge film is obtained by using the magnetron sputtering technology and the relatively mature low-temperature-high-temperature two-step growth technology. The general growth steps are: (1) grow a 60nm low-temperature Ge layer on the Si substrate under the conditions of sputtering pressure of 1.5Pa, sputtering power of 50W, and growth temperature of 350°C; (2) working pressure of not Change, the sputtering power is 100W, and a high-temperature Ge layer of 1~2.5μm is grown at a temperature of 650°C. According to the above experimental growth parameters, the obtained two-dimensional surface topography of Si-based Ge film, please refer to the attached Figure 5 (b).
[0035] A layer of 200nm thick SiO was grown on Si-based Ge film 2 or SiN x Insulation. And use etching technology to etch through th...
Embodiment 3
[0046] The single crystal Ge substrate is directly used as the crystalline Ge material. P-type Ge materials are easier to form ohmic contacts with metals than n-type Ge materials, so the selected single crystal Ge substrate is p-type doped, and its two-dimensional surface topography, please refer to the attached Figure 5 (c).
[0047] A layer of 200nm thick SiO was grown on p-type Ge(001) substrate 2 or SiN x Insulation. And use photolithography or plasma etching technology to etch through the insulating layer, so that it forms a square window of millimeter size, the size can be 1×1mm, 2×2mm, 3×3mm and so on.
[0048] For the anode ohmic contact layer, grow 100nm-thick Al or 15nm-thick Ni on the back of the Ge substrate by magnetron sputtering at room temperature, and then perform rapid thermal annealing at 400°C for 1min to achieve better ohmic contact.
[0049] Please refer to the appendix for the vacuum-evaporated OLED structure Figure 4 , including a hole injection ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More