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Up-conversion luminescent structure capable of raising luminescence intensity and preparation method

A technology of luminescent structure and luminous intensity, applied in luminescent materials, chemical instruments and methods, photovoltaic power generation, etc., can solve problems such as unseen KLaF films, achieve regulation and enhancement, solve low luminous intensity, and simple preparation process. Effect

Inactive Publication Date: 2016-01-27
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

QUR 4 (262cm -1 ) than NaYF 4 (360cm -1 ) lower phonon energy, so its film should have excellent up-conversion performance, but KLaF has not yet been seen 4 Report on the Development of Thin Film Upconversion Luminescent Properties

Method used

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  • Up-conversion luminescent structure capable of raising luminescence intensity and preparation method
  • Up-conversion luminescent structure capable of raising luminescence intensity and preparation method
  • Up-conversion luminescent structure capable of raising luminescence intensity and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 Ag thin film / lanthanum potassium fluoride thin film light-emitting structure without ZnO dielectric layer

[0029] (1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30~50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+ powder, continue to stir for 24 hours to obtain a transparent colloidal solution;

[0030] (2) Clean the common glass substrate and dry it;

[0031] (3) Deposit a metal Ag film on the glass substrate by vacuum evaporation method, with a thickness of about 10-20nm;

[0032] (4) Spin-coat the colloidal solution obtained in step (1) on the Ag film. The spin-coating conditions are: forward rotation speed 650rmp, time 12s; back rotation speed 2000rmp, time 30s;

[0033] (5) After the film is dry, repeat the step (4) to obtain an up-conversion light-emitting layer with a thickness of 50-100 nm.

Embodiment 2

[0034] Example 2 Ag thin film / lanthanum potassium fluoride thin film light emitting structure containing ZnO dielectric layer

[0035] (1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30~50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+ powder, continue to stir for 24 hours to obtain a transparent colloidal solution;

[0036] (2) Clean the common glass substrate and dry it;

[0037] (3) Deposit a metal Ag film on the glass substrate by vacuum evaporation method, with a thickness of about 10-20nm;

[0038] (4) Deposit zinc oxide on the metal Ag film by radio frequency magnetron sputtering. The sputtering process conditions are: use zinc oxide ceramic target, and the background vacuum is less than 6×10 -4 Pa, target base distance 75mm, Ar gas flow rate 60sccm, sputtering pressure 0.5Pa, sputtering power 100W, the zinc oxide film thickness obtained is 5~25nm;

[0039] ...

Embodiment 3

[0042] Example 3 Light-emitting structure of Au thin film / lanthanum potassium fluoride thin film without ZnO dielectric layer

[0043] (1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30~50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+powder, continue to stir for 24 hours to obtain a transparent colloidal solution;

[0044] (2) Clean the common glass substrate and dry it;

[0045] (3) Deposit metal Au film on the glass substrate by vacuum evaporation method, the thickness is about 10~20nm;

[0046] (4) Spin-coat the colloidal solution obtained in step (1) on the Au film. The spin-coating conditions are: forward rotation speed 650rmp, time 12s; back rotation speed 2000rmp, time 30s;

[0047] (5) After the film is dry, repeat the step (4) to obtain an up-conversion light-emitting layer with a thickness of 50-100 nm.

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Abstract

The invention discloses an up-conversion luminescent structure capable of raising luminescence intensity and a preparation method, wherein the structure comprises a substrate, a metal film layer, a dielectric layer and an up-conversion luminescent layer; the method comprises the steps of depositing Ag or Au on a piece of glass or silicon substrate by vacuum evaporation or direct current sputtering to form the metal film layer; then sputtering a layer of zinc oxide film by radio frequency magnetron sputtering; and finally spin coating a layer of fluorination lanthanum potassium doped with rare earth ion. According to the invention, the fluorination lanthanum potassium doped with rare earth ion is taken as the up-conversion luminescent material to enhance the luminescence intensity of the upper transition luminescent structure; and the thickness of the dielectric layer zinc oxide film is controlled to regulate and control the luminescence intensity of the up-conversion luminescent structure, therefore up-conversion luminescence intensity is enhanced. The up-conversion luminescent structure can be applied in biomedical science, luminescent devices and solar energy cell fields; the preparation technology is simple; the operation is easy and the application prospect is wide.

Description

technical field [0001] The invention belongs to the technical field of up-conversion luminescent materials, and in particular relates to an up-conversion luminescent structure capable of improving luminous intensity and a preparation method thereof. Background technique [0002] Up-conversion fluorides have broad application prospects in biomedicine, light-emitting devices, solid-state lasers, solar cells and other fields, and have become one of the current research hotspots. Currently, NaYF doped with rare earth ions 4 It is considered to be one of the most promising luminescent materials. The fluorides currently reported in the literature include rare earth doped NaYF 4 、LiYF 4 and other luminescent films. QUR 4 (262cm -1 ) than NaYF 4 (360cm -1 ) lower phonon energy, so its thin film should have excellent up-conversion performance, but KLaF has not yet been seen 4 Report on the development of thin film up-conversion luminescent properties. [0003] In recent yea...

Claims

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Application Information

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IPC IPC(8): H01L31/055H01L33/50H01L33/48H01L33/00C09K11/85
CPCY02E10/52H01L31/055C09K11/7704H01L33/005H01L33/48H01L33/501H01L2933/0041
Inventor 周海芳王谢春程树英郑巧赖云锋孙建斌
Owner FUZHOU UNIVERSITY
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