Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology

Abstract

The invention belongs to the technical field of organic electronic devices, and particularly relates to a method for preparing an organic field effect transistor dielectric layer by using a plasma crosslinking technology. Firstly a gate or a gate and an insulating layer are prepared on a substrate. And then monomer which can be polymerized is activated by the plasma through a plasma enhanced chemical vapor deposition (PECVD) method, and a compact, ultrathin and crosslinking organic matter dielectric layer grows on the gate or the dielectric layer. A semiconductor layer is then prepared on a thin film. Finally a source electrode and a drain electrode are made. The PECVD method is used to achieve mutual crosslinking of organic materials and further the compact and ultrathin dielectric layer with high insulation is prepared. The method is simple and convenient. Flexible electronic devices made of the full organic materials can be realized, and the problem that inorganic materials can not bend is overcome. The thin film with high crosslinking has good insulating property. The preparation of the ultrathin dielectric layer required by the flexible electronic devices can be achieved. Meanwhile the organic materials are not dissolved in general organic solvents, and a full solution method for preparing an organic field effect transistor can be realized.

Description

technical field [0001] The invention belongs to the technical field of organic electronic devices, and in particular relates to a method for preparing a field-effect transistor dielectric layer by using plasma crosslinking technology. Background technique [0002] In recent years, organic electronic devices have developed rapidly, new materials, new processes, and new devices have emerged one after another, and scientific research and industrial applications have also advanced hand in hand. Organic electronic devices mainly include organic photovoltaic cells, organic light-emitting diodes, organic field-effect transistors, etc. In the field effect transistor, since its turn-on and turn-off is mainly realized by the mechanism that the gate voltage generates polarized charges in the semiconductor layer to connect the source and drain, the dielectric properties of the device dielectric layer and the The magnitude of the loaded gate voltage plays a decisive role in the manufact...

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Problems solved by technology

However, thermally grown silica is not sufficient for flexible devices

On the other hand, the chemical vapor deposition method is widely used in the deposition of organic dielectric films. The polymer monomer is introduced into the reaction chamber, and the catalyst is used to realize the polymerization reaction on the substrate to form a film, and an insulating film with superior properties can also be obtained. , but the polymerization reaction is often accompanied by more pinholes in the process of realizing ultra-thin films, resulting in a large leakage current in the device

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