Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology

A plasma and dielectric layer technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems that cannot meet the needs of flexible devices, large leakage current of devices, etc., to overcome inflexibility and improve the surface The effect of simple features and equipment

Inactive Publication Date: 2016-01-27
FUDAN UNIV
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thermally grown silica is not sufficient for flexible devices
On the other hand, the chemical vapor deposition method is widely used in the deposition of organic dielectric films. The polymer monomer is introduced into the reaction chamber, and the catalyst is used to realize the pol

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology
  • Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0023] Example 1

[0024] A preparation of an organic field effect transistor, the organic field effect transistor comprises a substrate, a gate electrode, a dielectric layer (PECVD), an organic semiconductor layer, and source and drain electrodes;

[0025] Specific steps:

[0026] Step 1: Cleaning the silicon substrate

[0027] The n-type heavily doped silicon substrate without silicon dioxide was ultrasonically cleaned in sequence with detergent, tap water, deionized water, acetone, and absolute ethanol for 10 minutes, and then dried with nitrogen.

[0028] The second step, plasma-enhanced chemical vapor deposition to prepare the cross-linked dielectric layer

[0029] The semi-finished product prepared above was placed in a vacuum chamber, and a mixed gas of argon and acetylene was introduced in the ratio of 5:3, the pressure was maintained at 10Pa, the plasma was generated by inductively coupled discharge, the power was 100W, and the treatment time was 30 minutes. Form...

Example Embodiment

[0034] Example 2

[0035] A preparation of an organic field effect transistor, the organic field effect transistor includes a substrate, a gate electrode, an insulating layer, a dielectric layer (PECVD), an organic semiconductor layer, and source and drain electrodes, such as figure 1 shown.

[0036] Specific steps:

[0037] Step 1: Cleaning the silicon substrate

[0038] The n-type heavily doped silicon substrate without silicon dioxide was ultrasonically cleaned in sequence with detergent, tap water, deionized water, acetone, and absolute ethanol for 10 minutes, and then dried with nitrogen.

[0039] Step 2: Preparation of insulating layer by solution method

[0040] A polyvinyl alcohol solution with a mass fraction of 8 wt% is prepared, and the solution is coated on a silicon substrate, and a dielectric layer is prepared by spin coating at a rotational speed of about 2000 rpm, and then dried to a thickness of about 800 nm.

[0041] The third step, plasma-enhanced chem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of organic electronic devices, and particularly relates to a method for preparing an organic field effect transistor dielectric layer by using a plasma crosslinking technology. Firstly a gate or a gate and an insulating layer are prepared on a substrate. And then monomer which can be polymerized is activated by the plasma through a plasma enhanced chemical vapor deposition (PECVD) method, and a compact, ultrathin and crosslinking organic matter dielectric layer grows on the gate or the dielectric layer. A semiconductor layer is then prepared on a thin film. Finally a source electrode and a drain electrode are made. The PECVD method is used to achieve mutual crosslinking of organic materials and further the compact and ultrathin dielectric layer with high insulation is prepared. The method is simple and convenient. Flexible electronic devices made of the full organic materials can be realized, and the problem that inorganic materials can not bend is overcome. The thin film with high crosslinking has good insulating property. The preparation of the ultrathin dielectric layer required by the flexible electronic devices can be achieved. Meanwhile the organic materials are not dissolved in general organic solvents, and a full solution method for preparing an organic field effect transistor can be realized.

Description

technical field [0001] The invention belongs to the technical field of organic electronic devices, and in particular relates to a method for preparing a field-effect transistor dielectric layer by using plasma crosslinking technology. Background technique [0002] In recent years, organic electronic devices have developed rapidly, new materials, new processes, and new devices have emerged one after another, and scientific research and industrial applications have also advanced hand in hand. Organic electronic devices mainly include organic photovoltaic cells, organic light-emitting diodes, organic field-effect transistors, etc. In the field effect transistor, since its turn-on and turn-off is mainly realized by the mechanism that the gate voltage generates polarized charges in the semiconductor layer to connect the source and drain, the dielectric properties of the device dielectric layer and the The magnitude of the loaded gate voltage plays a decisive role in the manufact...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/474H10K10/471
Inventor 何孔多曾盼杨晓森区琼荣梁荣庆
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap