Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology

A plasma and dielectric layer technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems that cannot meet the needs of flexible devices, large leakage current of devices, etc., to overcome inflexibility and improve the surface The effect of simple features and equipment

Inactive Publication Date: 2016-01-27
FUDAN UNIV
4 Cites 10 Cited by

AI-Extracted Technical Summary

Problems solved by technology

However, thermally grown silica is not sufficient for flexible devices
On the other hand, the chemical vapor deposition method is widely used in the deposition of organic dielectric films. The polymer monomer is introduced into the reaction chamber, and the catalyst is used to realize the pol...
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Abstract

The invention belongs to the technical field of organic electronic devices, and particularly relates to a method for preparing an organic field effect transistor dielectric layer by using a plasma crosslinking technology. Firstly a gate or a gate and an insulating layer are prepared on a substrate. And then monomer which can be polymerized is activated by the plasma through a plasma enhanced chemical vapor deposition (PECVD) method, and a compact, ultrathin and crosslinking organic matter dielectric layer grows on the gate or the dielectric layer. A semiconductor layer is then prepared on a thin film. Finally a source electrode and a drain electrode are made. The PECVD method is used to achieve mutual crosslinking of organic materials and further the compact and ultrathin dielectric layer with high insulation is prepared. The method is simple and convenient. Flexible electronic devices made of the full organic materials can be realized, and the problem that inorganic materials can not bend is overcome. The thin film with high crosslinking has good insulating property. The preparation of the ultrathin dielectric layer required by the flexible electronic devices can be achieved. Meanwhile the organic materials are not dissolved in general organic solvents, and a full solution method for preparing an organic field effect transistor can be realized.

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  • Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology
  • Method for preparing organic field effect transistor dielectric layer by using plasma crosslinking technology

Examples

  • Experimental program(2)

Example Embodiment

[0023] Example 1
[0024] A preparation of an organic field effect transistor, the organic field effect transistor comprises a substrate, a gate electrode, a dielectric layer (PECVD), an organic semiconductor layer, and source and drain electrodes;
[0025] Specific steps:
[0026] Step 1: Cleaning the silicon substrate
[0027] The n-type heavily doped silicon substrate without silicon dioxide was ultrasonically cleaned in sequence with detergent, tap water, deionized water, acetone, and absolute ethanol for 10 minutes, and then dried with nitrogen.
[0028] The second step, plasma-enhanced chemical vapor deposition to prepare the cross-linked dielectric layer
[0029] The semi-finished product prepared above was placed in a vacuum chamber, and a mixed gas of argon and acetylene was introduced in the ratio of 5:3, the pressure was maintained at 10Pa, the plasma was generated by inductively coupled discharge, the power was 100W, and the treatment time was 30 minutes. Forms an ultra-thin dielectric layer that acts as an insulating layer.
[0030] The third step is to prepare the organic semiconductor layer
[0031] A chloroform solution of pentacene was prepared, 5 mg/ml, and spin-coated on the surface of the dielectric layer at a rotational speed of 1500 rpm, and then dried. The thickness of the organic semiconductor layer was about 60 nm.
[0032] Step 4: Evaporate source and drain electrodes
[0033]Electrodes are vacuum-evaporated on the surface of the organic semiconductor layer through a mask, and the electrode material is silver to form source-drain electrodes with a thickness of 100 nm.

Example Embodiment

[0034] Example 2
[0035] A preparation of an organic field effect transistor, the organic field effect transistor includes a substrate, a gate electrode, an insulating layer, a dielectric layer (PECVD), an organic semiconductor layer, and source and drain electrodes, such as figure 1 shown.
[0036] Specific steps:
[0037] Step 1: Cleaning the silicon substrate
[0038] The n-type heavily doped silicon substrate without silicon dioxide was ultrasonically cleaned in sequence with detergent, tap water, deionized water, acetone, and absolute ethanol for 10 minutes, and then dried with nitrogen.
[0039] Step 2: Preparation of insulating layer by solution method
[0040] A polyvinyl alcohol solution with a mass fraction of 8 wt% is prepared, and the solution is coated on a silicon substrate, and a dielectric layer is prepared by spin coating at a rotational speed of about 2000 rpm, and then dried to a thickness of about 800 nm.
[0041] The third step, plasma-enhanced chemical vapor deposition to prepare the cross-linked dielectric layer
[0042] The semi-finished product prepared above was placed in a vacuum chamber, and a mixed gas of argon and acetylene was introduced in the ratio of 5:1. An ultra-thin dielectric layer is formed.
[0043] The fourth step is to prepare the organic semiconductor layer
[0044] A chloroform solution of pentacene was prepared, 5 mg/ml, and spin-coated on the surface of the dielectric layer at a rotational speed of 1500 rpm, and then dried. The thickness of the organic semiconductor layer was about 60 nm.
[0045] Step 5: Evaporate source and drain electrodes
[0046] Electrodes are vacuum-evaporated on the surface of the organic semiconductor layer through a mask, and the electrode material is silver to form source-drain electrodes with a thickness of 100 nm.
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PUM

PropertyMeasurementUnit
Thickness100.0nm
tensileMPa
Particle sizePa
strength10

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