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A kind of preparation method of the graphene nano-wall electrode doped with nano co(oh)2/co3o4

A graphene nano-wall and manufacturing method technology, which is applied to the manufacture of hybrid/electric double-layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of poor graphene wall structure, limited surface area improvement, small effective surface area, etc. Good dispersion, avoid the effect of agglomeration

Active Publication Date: 2017-12-22
GUANGZHOU MOXI TECH CO LTD
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Problems solved by technology

However, the structure of the graphene wall prepared by pure plasma chemical vapor deposition is poor, and the distance between the walls is relatively large, so the improvement of the surface area is limited.
In addition, graphene nanowalls without surface modification are extremely hydrophobic, and their applications are limited. They are subsequently used in the process of preparing devices, such as electrodes for supercapacitors, lithium-ion batteries, and nanoparticle modification, liquid ( Such as electrolyte) cannot wet the interior of the graphene wall, resulting in an extremely small effective surface

Method used

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  • A kind of preparation method of the graphene nano-wall electrode doped with nano co(oh)2/co3o4
  • A kind of preparation method of the graphene nano-wall electrode doped with nano co(oh)2/co3o4
  • A kind of preparation method of the graphene nano-wall electrode doped with nano co(oh)2/co3o4

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Copper sheet is used as substrate 1, and graphene nanowall 2 is prepared by PECVD; cobalt acetate is used as precursor to prepare doped Co(OH) 2 Graphene nanowall supercapacitor electrode of nanoparticles, see for specific structure figure 1 .

[0039] in CH 4 The plasma was used as a precursor, and Cu was heated to 800 °C in a PECVD reactor by passing argon and hydrogen at the same time. The graphene nanowall 2 is grown on the substrate 1 by the PECVD method, the growth time is controlled to 30 minutes, the gas flow of the precursor is 10 sccm, and the air pressure is 10Pa, and the graphene nanowall 2 with a height of 1 micron can be obtained. to N 2 The plasma was bombarded at 50W for 100s. Dissolve 2 parts by mass of glacial acetic acid and 2 parts by mass of citric acid in water and ethanol, and adjust the pH value to 3 with concentrated hydrochloric acid. Add 1 part by mass of cobalt acetate to the solution prepared above, and stir thoroughly at 60°C to obtain...

Embodiment 2

[0042] Using metal nickel as the substrate, using PECVD to prepare graphene nano-walls; using cobalt carbonate as a precursor to prepare doped nano-Co(OH) 2 Graphene nanowall supercapacitor electrodes.

[0043] in CH 4 The plasma of Ni was used as a precursor, and Ni was heated to 800 °C in a PECVD reactor. Graphene nanowalls were grown on the substrate by PECVD method, the precursor gas flow was 20sccm, and the gas pressure was 20Pa. The growth time is controlled to be 60 minutes, and a graphene nanowall with a height of 3 microns can be obtained. with O 2 The plasma was bombarded for 210s at 60W power. Dissolve 6 parts by mass of tartaric acid in water and ethanol, and adjust the pH value to 3 with concentrated hydrochloric acid. Add 1 part by mass of cobalt acetate to the solution prepared above, and stir thoroughly at 60° C. to obtain a 0.1 mol / L cobalt acetate solution. 4 parts by mass of polyvinylpyrrolidone was added to the obtained cobalt acetate solution as a su...

Embodiment 3

[0045] Using silicon wafers as substrates, PECVD was used to prepare graphene nanowalls; cobalt acetate was used as a precursor to prepare doped nano-Co 3 o 4 Graphene nanowall supercapacitor electrodes.

[0046] in CH 4 Plasma is used as a precursor, and the Si wafer is heated to 1000°C in a PECVD reactor. Graphene nanowalls were grown on the substrate by PECVD method, the precursor gas flow was 20sccm, and the gas pressure was 20Pa. The growth time is controlled to be 150 minutes, and a graphene nanowall with a height of 5 microns can be obtained. in NH 3 The plasma was bombarded at 100W for 165s.

[0047] Dissolve 3 parts by mass of glacial acetic acid and 3 parts by mass of tartaric acid in water and ethanol, and adjust the pH value to 3 with concentrated hydrochloric acid. Add 2 parts by mass of cobalt acetate to the solution prepared above, and stir thoroughly at 60° C. to obtain a 0.2 mol / L cobalt acetate solution. To the obtained cobalt acetate solution was adde...

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Abstract

The invention discloses a preparation method of a nano Co(OH)2 / Co3O4 doped graphene nano wall electrode. The preparation method includes the following steps that: 1) a graphene nano wall is prepared; 2) surface modification is performed on the graphene nano wall; 3) nano CO(OH)2 is deposited on the graphene nano wall; and 4) hot treatment is performed on the nano CO(OH)2 doped graphene nano wall / substrate under 100 to 400 DEG C, so that a nano CO(OH)2 / Co3O4 doped graphene nano wall electrode can be obtained. According to a super capacitor electrode prepared by adopting the preparation method, plasma bombardment is adopted to perform surface modification on graphene, so that the graphene nano wall electrode has an excellent hydrophilicity; by means of the graphene nano wall electrode and Co(OH)2 / Co3O4 nanoparticles, an electrode with double electrical layers and pseudocapacitance characteristics can be obtained. Compared with a traditional graphene wall, the electrical properties of the electrode obtained by adopting the preparation method of the invention are increased by tens of times, and the electrode is simple in the process and low in cost, and can be mass produced.

Description

technical field [0001] The invention relates to the technical field of electronic materials for energy storage materials and electrical components, in particular to the technical field of doped nano-particle graphene supercapacitor materials. Background technique [0002] Supercapacitor (supercapacitor, ultracapacitor) is one of the most promising electrochemical energy storage technologies. Also known as electrical double layer capacitor (Electrical Doule-Layer Capacitor), electrochemical capacitor (Electrochemcial Capacitor, EC), gold capacitor, farad capacitor, store energy by polarized electrolyte. A supercapacitor can be regarded as two non-reactive porous electrode plates suspended in the electrolyte. When electricity is applied to the plates, the positive plate attracts negative ions in the electrolyte, and the negative plate attracts positive ions, actually forming two capacitive storage layer, the separated positive ions are near the negative plate, and the negativ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/86H01G11/24H01G11/30H01G11/46H01G11/36
CPCY02E60/13
Inventor 郝奕舟陈剑豪王天戌
Owner GUANGZHOU MOXI TECH CO LTD
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