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Method for purification of off-gas and device for the same

A waste gas purification and waste gas technology, applied in chemical instruments and methods, separation methods, gas treatment, etc., can solve the problems of expensive equipment and treatment costs, influence of polysilicon purity, low molecular weight, etc., and achieve the effect of reducing equipment and process operating costs

Inactive Publication Date: 2016-04-06
HANWHA CHEMICAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of the existing pressure swing adsorption method is that the adsorption process and the regeneration process are carried out separately, so the process is very complicated, and the equipment and treatment costs are expensive
[0014] In addition, in the adsorption process using activated carbon, chlorosilane compounds are condensed in liquid phase on the surface of activated carbon and can be easily removed, but because of the low boiling point of hydrogen chloride, it forms a physical bond on the surface of activated carbon in gas phase, which in Desorbs at room temperature, so most of the hydrogen chloride is expelled without being removed
And because of its low molecular weight compared to chlorosilane compounds, it needs to be completely separated from hydrogen by applying an additional process
[0015] Therefore, since corrosion of hydrogen chloride may cause problems such as mechanical failure of equipment, shortened life, and leakage of chlorosilane compounds, the purity of polysilicon may be affected

Method used

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  • Method for purification of off-gas and device for the same
  • Method for purification of off-gas and device for the same
  • Method for purification of off-gas and device for the same

Examples

Experimental program
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Embodiment 1

[0103] Based on activated carbon, 5% by weight of platinum (Pt) catalyst was mixed with methanol containing a small amount of water, the mixture was coated on activated carbon, and then heated in a drying oven at 80°C to remove methanol and moisture, thereby preparing Carbon support (5% by weight of Pt / C) on which a transition metal catalyst is supported.

[0104] The carbon support that is loaded with transition metal catalyst on it is packed in the catalytic reactor, then, at temperature 150 ℃, under pressure 3 bars, activate 1 hour 30 minutes, to remove the organic substance of active carbon and moisture (H 2 O).

[0105] In the catalytic reactor, exhaust gas produced by a polysilicon deposition process by chemical vapor deposition (CVD) is introduced. Based on gas chromatography (GC) peak areas, the off-gas contains about 99 mole percent hydrogen (H 2 ), about 0.5 mole percent hydrogen chloride (HCl), about 0.03 mole percent trichlorosilane, and about 0.07 mole percent s...

experiment Embodiment 1

[0111] use as figure 1 The purification device shown purifies the exhaust gas. In order to confirm its performance, the process was simulated using the process simulation software ASPENPlus.

[0112] The reaction temperature and pressure of the catalytic reactor 3 were set at 170° C. and 5 barG, respectively, and the composition of the stream introduced into the catalytic reactor 3 was set to consist of 1 mol% of hydrogen chloride, 2 mol% of dichlorosilane, 10 mol% Trichlorosilane, 7 mol% silicon tetrachloride, and 80 mol% hydrogen. As for the catalytic reactor 3, the R-Gibbs and R-Stoic models are used.

[0113]As a result of the simulation under the above conditions, the mixed gas 5 passing through the catalytic reactor 3 is composed of 1 mol% of dichlorosilane, 12 mol% of trichlorosilane, 7 mol% of silicon tetrachloride, and 80 mol% of hydrogen composition, and it can be confirmed that hydrogen chloride and dichlorosilane are reacted under given reaction conditions to be...

experiment Embodiment 2

[0115] use as figure 2 The purification device shown purifies the exhaust gas. In order to confirm its performance, the process was simulated using the process simulation software ASPENPlus.

[0116] The reaction temperature and pressure of the catalytic reactor 30 were set at 170° C. and 5 barG, respectively, and the composition of the stream introduced into the catalytic reactor 30 was set to consist of 1 mol% of hydrogen chloride, 2 mol% of dichlorosilane, 10 mol% Trichlorosilane, 7 mol% silicon tetrachloride, and 80 mol% hydrogen. As for the catalytic reactor 30, the R-Gibbs and R-Stoic models are used.

[0117] The purification temperature in the first distillation column 60 is set at -5 to -60° C., and the pressure is set at 23 barG. The composition of the mixed gas 50 stream introduced into the first distillation tower 60 is set to be the same as the composition obtained as a result of the simulation of the catalytic reactor 30, which consists of 1 mol% of dichloros...

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Abstract

This disclosure relates to a method for purification of off-gas and a device for the same. More particularly, this disclosure relates to a method for purification of off-gas that removes hydrogen chloride from the off-gas discharged after conducting a polysilicon deposition process by chemical vapor deposition, and can separate hydrogen of high purity, and a device for the same.

Description

technical field [0001] The invention relates to a waste gas purification method and a device used in the method. More specifically, the present invention relates to an exhaust gas purification method that removes hydrogen chloride from exhaust gas discharged after a deposition process of polysilicon by chemical vapor deposition and can separate high-purity hydrogen gas and an apparatus used for the method . [0002] This application claims priority from Korean Patent Application No. 10-2013-0102573 filed with the Korean Intellectual Property Office on Aug. 28, 2013, the entire contents of which are hereby incorporated by reference. Background technique [0003] One of the known methods of preparing polysilicon for solar cells is to deposit polysilicon in a chemical vapor deposition (CVD) reactor, also known as the Siemens process. [0004] In the Siemens process, silicon filaments are exposed to trichlorosilane and a carrier gas at temperatures above 1000°C, usually. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/86B01D53/68B01D53/74
CPCB01D53/68B01J23/40B01J23/755B01D2253/102B01D2255/102B01D2255/20753B01D2256/16B01D2256/26B01D2257/2045B01D2258/0216B01J21/18B01J23/42B01D53/8659B01D53/86B01D53/74B01D2255/1021B01D2255/207
Inventor 金吉浩李元翼安贵龙金宝经
Owner HANWHA CHEMICAL CORPORATION