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Preparation method of graphene nanobelt-loaded semi-conductive 3D photocatalytic material

A technology of graphene nanobelts and photocatalytic materials, which is applied in the field of preparation of three-dimensional photocatalytic materials, to achieve the effect of simple preparation process, improved activity and photocatalytic performance

Active Publication Date: 2016-05-04
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, when preparing graphene nanoribbons in the experiment, due to the influence of other external factors, the prepared graphene nanoribbons are not so perfect, more or less there will be some deformation or defects

Method used

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  • Preparation method of graphene nanobelt-loaded semi-conductive 3D photocatalytic material
  • Preparation method of graphene nanobelt-loaded semi-conductive 3D photocatalytic material
  • Preparation method of graphene nanobelt-loaded semi-conductive 3D photocatalytic material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Graphene nanoribbon loaded semiconductor material GNR-TiO 2 / C 3 N 4 , containing C, H, Ti, O and H elements.

[0028] The above-mentioned graphene nanobelt loaded semiconductor material specifically includes the following steps:

[0029] (1) Preparation of graphene nanobelts

[0030] Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0031] (2) Preparation of graphene nanobelt-supported semiconductor materials carbon nitride and titanium dioxide

[0032] Weigh 0.3g of titanium d...

Embodiment 2

[0044] A three-dimensional photocatalytic material GNR-TiO supported by graphene nanoribbons 2 / Bi 2 WO 6 . Contains C, Ti, O, H, Bi, W elements.

[0045] (1) Preparation of graphene nanobelts

[0046] Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0047] (2) Preparation of graphene nanobelt-supported semiconductor titanium dioxide and bismuth tungstate.

[0048] Weigh 0.3g of titanium dioxide precursor, add 24mL of hydrogen peroxide solution and 5mL of ammonia water, and stir unt...

Embodiment 3

[0051] A three-dimensional photocatalytic material GNR-TiO supported by graphene nanoribbons 2 / C 3 N 4 . Contains C, N, Ti, O, H elements.

[0052] (1) Preparation of graphene nanobelts

[0053]Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0054] (2) Preparation of graphene nanobelt-supported semiconductor titanium dioxide and carbon nitride

[0055] Weigh 0.3g of titanium dioxide precursor, add 24mL of hydrogen peroxide solution and 5mL of ammonia water, and stir until the solu...

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Abstract

The invention relates to a preparation method of a graphene nanobelt-loaded semi-conductive 3D photocatalytic material. The preparation method comprises dissolving a titanium dioxide precursor in a hydrogen peroxide-ammonium hydroxide mixed solution, stirring the mixed solution until the solution has a yellow color and is clear, adding carbon nitride into the mixed solution, when the solution is turbid, carrying out centrifugation washing, adding deionized water and graphene nanobelts subjected to ultrasonic treatment into the solution, carrying out stirring, carrying out a reaction process in a reactor, centrifuging, washing and drying the reaction product and calcining the dried reaction product in a nitrogen atmosphere to obtain the graphene nanobelt-loaded semi-conductive 3D photocatalytic material. Compared with the prior art, the preparation method has simple processes and effectively improves catalyst activity and photocatalysis performances. Through use of the graphene nanobelt, the graphene nanobelt-loaded semi-conductive 3D photocatalytic material can produce obvious response in a visible light area.

Description

technical field [0001] The invention relates to the technical field of preparation of catalyst materials for photocatalytic degradation of pollutants, in particular to a preparation method of a three-dimensional photocatalytic material supported by graphene nanobelts on semiconductors. Background technique [0002] In terms of energy conversion and environmental purification, photocatalytic technology is considered as a green technology that can effectively utilize solar energy. Titanium dioxide (TiO 2 ) as an important catalyst has many advantages: low cost, easy to obtain, strong physical and chemical stability, etc. However, the band gap of titanium dioxide is 3.2 eV, so that it can only absorb ultraviolet light, resulting in insufficient utilization of sunlight. In order to be able to synthesize photocatalytic materials with visible light response, we synthesized carbon nitride (C 3 N 4 ) into consideration. As a new metal-free polymeric semiconductor with a band ga...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J23/31
CPCB01J23/002B01J23/31B01J27/24B01J2523/00B01J35/39B01J2523/47B01J2523/54B01J2523/69
Inventor 闵宇霖周凡琪李涛涛
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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