PEAK (polyaryletherketone) polymer with POSS (polysilsesquioxane) structure and preparation method

A technology of polysilsesquioxane and polyaryletherketone, which is applied in the field of preparation of polyaryletherketone series polymers containing POSS structure, can solve the problems of poor film-forming properties and low mechanical properties, and achieve improved heat resistance, The effect of lowering the dielectric constant

Active Publication Date: 2016-05-25
吉林省聚科高新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a polyaryl ether ketone polymer containing a polysilsesquioxane structure and a preparation method thereof. The purpose is to graft POSS containing a reactive group to a fluorine-containing polyaryl ether ketone chain through a chemical grafting method. In the segment structure, POSS's special cage structure and good compatibility with the polymer matrix can effectively solve the problems of phase separation, poor film formation and low mechanical properties

Method used

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  • PEAK (polyaryletherketone) polymer with POSS (polysilsesquioxane) structure and preparation method
  • PEAK (polyaryletherketone) polymer with POSS (polysilsesquioxane) structure and preparation method
  • PEAK (polyaryletherketone) polymer with POSS (polysilsesquioxane) structure and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0020] Add 65.46g (0.300mol) 4,4'-difluorobenzophenone, 95.826g (0.285mol) hexafluorobisphenol A, 2.312g (0.015 mol) 3,5-dihydroxybenzoic acid, 44.000g (0.315mol) potassium carbonate, 360ml sulfolane (using sulfolane as a solvent, the solvent addition is advisable with a solid content of 20% to 35%, and the amount of sulfolane in this embodiment is based on the solid content Quantity 25% calculation), 100ml toluene. Under stirring conditions, the temperature was raised to 140°C for 3 hours. After the water generated by the reaction was completely taken out, the temperature was continued to release toluene, and then the temperature was raised to 180°C for 3 hours, and finally the temperature was raised to 220°C for 5 hours. The reaction product is discharged in 5% hydrochloric acid solution. After cooling, the product was pulverized, washed with deionized water and ethanol for 5 times to remove inorganic salts and organic solvents, and finally the product was vacuum-dried at 1...

Embodiment 2

[0022] The method is as in Example 1, changing the molar content of 3,5-dihydroxybenzoic acid to 30%, namely [3,5-dihydroxybenzoic acid / (3,5-dihydroxybenzoic acid+hexafluorobisphenol A)] The molar ratio is 30%. After acid chlorination, 0.09108 g of POSS was added, and the reaction was continued as in Example 1 to obtain a white polyaryletherketone polymer containing hexafluorobisphenol A structure with a POSS content of 30%, with a yield of 97%.

Embodiment 3

[0024] The method is as in Example 1, changing the molar content of 3,5-dihydroxybenzoic acid to 17.5%, namely [3,5-dihydroxybenzoic acid / (3,5-dihydroxybenzoic acid+hexafluorobisphenol A)] The molar ratio is 17.5%. After acid chlorination, 0.05313 g of POSS was added, and the reaction was continued as in Example 1 to obtain white polyaryletherketone polymers containing hexafluorobisphenol A structure with a POSS content of 17.5%, with a yield of 97%.

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Abstract

The invention relates to a PEAK (polyaryletherketone) polymer with a POSS (polysilsesquioxane) structure and a preparation method and belongs to the field of high polymer materials. The PEAK polymer containing carboxyl and fluorine is prepared by introducing a carboxyl structure into a fluorine-containing PEAK main chain structure through nucleophilic substitution. The polymer has excellent heat stability, good dissolving property and lower dielectric constant. Further, POSS containing hydroxyl functional groups is grafted to a fluorine-containing PEAK side chain structure through Friedel Crafts acylation reaction, so that characteristics of POSS and fluorine-containing PEAK are organically combined, the dielectric constant of a material is further reduced, the heat resistance of the material is improved, and different using requirement are met.

Description

technical field [0001] The invention belongs to the field of macromolecular materials, and in particular relates to a preparation method of a polyaryletherketone series polymer containing a POSS structure. Background technique [0002] In order to meet the needs of the development of the microelectronics industry, the research and development of low dielectric constant materials is becoming one of the most important topics. As the size of VLSI gradually shrinks and the internal links and transmission lines of chips become denser, signal transmission delays and cross-interference are caused. In order to reduce signal transmission delay and electronic cross-interference, as well as the increase in power consumption due to dielectric loss, materials are required to meet the following performance: (1) low dielectric constant, low dielectric loss, high breakdown voltage and Low leakage current; (2) High mechanical strength, low residual stress and high hardness, etc.; (3) High t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/46C08G65/48
CPCC08G65/48C08G77/46
Inventor 白迪
Owner 吉林省聚科高新材料有限公司
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