A kind of perovskite type solar cell and preparation method thereof
A solar cell and perovskite type technology, applied in the field of solar cells, can solve the problem of difficult control of perovskite grain nucleation and film growth direction, high probability of electron and hole recombination, and reduction of carrier diffusion length, etc. problems, to achieve the effect of improving photoelectric conversion efficiency and stability, passivating surface defects, and improving film morphology
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[0037] figure 1 In the shown perovskite solar cell, before the perovskite light-absorbing layer is prepared by the liquid phase method, the surface of the electron transport layer is modified to form a liquid crystal layer. The preparation method includes the following steps:
[0038] 1) Clean the transparent electrode, etch the electrode pattern and then clean, dry, and UV / ozone treatment;
[0039] 2) preparing an electron transport layer on the transparent electrode;
[0040] 3) preparing a liquid crystal layer on the surface of the electron transport layer;
[0041] 4) On the surface of the liquid crystal layer, a perovskite light-absorbing layer is grown;
[0042] 5) Depositing a hole transport layer on the surface of the perovskite light-absorbing layer;
[0043] 6) Prepare a counter electrode on the hole transport layer.
[0044] figure 2 In the shown perovskite solar cell, before the perovskite light-absorbing layer is prepared by the liquid phase method, the surf...
Embodiment 1
[0066] The first step is to prepare a transparent electrode:
[0067] The ITO conductive glass was etched with concentrated hydrochloric acid to form an electrode pattern, and then ultrasonically cleaned with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 10 minutes, then dried with nitrogen, and treated with UV / ozone for 20 minutes.
[0068] The second step is to prepare the electron transport layer:
[0069] The precursor solution of nano-ZnO particle colloid was deposited on the surface of the transparent ITO electrode by spin coating, and then placed in a muffle furnace for sintering at a high temperature of 200 ° C for 30 min to form a dense layer with a thickness of 35 nm.
[0070] The third step is to prepare the liquid crystal layer:
[0071] Disperse the liquid crystal molecule 5CB in a chloroform solvent to prepare a transparent and uniform liquid crystal layer solution;
[0072] The solution prepared above is deposited on the surface of...
Embodiment 2
[0082] The first step and the sixth step preparation method are the same as in Example 1.
[0083] The second step is to prepare the electron transport layer:
[0084] Deposition of Nano TiO on the Surface of Transparent ITO Electrode by Spin Coating 2 The precursor solution of the particle colloid is then put into a muffle furnace and sintered at a high temperature of 450° C. for 40 minutes to form a dense layer with a thickness of 5 nm.
[0085]The third step is to prepare the liquid crystal layer:
[0086] Disperse liquid crystal molecule 8CB in chlorobenzene solvent to prepare a transparent and uniform liquid crystal layer solution;
[0087] The solution prepared above was spin-coated on the surface of the electron transport layer to form a thin film layer at a speed of 3500 rpm and a time of 45 s;
[0088] The film layer prepared above was dried at 75° C. for 60 min to form an 8CB liquid crystal layer with a thickness of 0.5 nm.
[0089] The fourth step is to prepare ...
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