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Spinel-type tetragonal phase CuFe2O4 ferromagnetic film and preparation method thereof

A ferromagnetic thin film, spinel-type technology, applied in the field of spinel-type tetragonal CuFe2O4 ferromagnetic thin-film and its preparation, can solve the problem of preparing spinel-type tetragonal equivalence, and achieve precise controllable chemical composition, reaction The effect of low temperature and easy reaction

Active Publication Date: 2016-06-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, no sol-gel method has been used to prepare spinel tetragonal phase CuFe 2 o 4 Related reports on ferromagnetic thin films

Method used

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  • Spinel-type tetragonal phase CuFe2O4 ferromagnetic film and preparation method thereof
  • Spinel-type tetragonal phase CuFe2O4 ferromagnetic film and preparation method thereof
  • Spinel-type tetragonal phase CuFe2O4 ferromagnetic film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0029] Step 1, copper nitrate and ferric nitrate are dissolved in ethylene glycol methyl ether at a molar ratio of 1:2, after stirring for 30 minutes, acetic anhydride is added to obtain a stable CuFe nitrate with a Fe ion concentration of 0.3mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 4:1;

[0030] Step 2, place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. Then put the FTO / glass substrate into an oven to bake until dry, take it out and let it stand at room temperature. Then place the clean FTO / glass substrate in an ultraviolet light irradiation instrument for 40 minutes to make the surface of the FTO / glass substrate reach "atomic cleanliness". Spin Coating of CuFe on FTO / Glass Substrate ...

Embodiment 2

[0034] Step 1, copper nitrate and ferric nitrate are dissolved in ethylene glycol methyl ether at a molar ratio of 1:2, after stirring for 30 minutes, acetic anhydride is added to obtain a stable CuFe nitrate with a Fe ion concentration of 0.3mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 4:1;

[0035] Step 2, place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. Then put the FTO / glass substrate into an oven to bake until dry, take it out and let it stand at room temperature. Then place the clean FTO / glass substrate in an ultraviolet light irradiation instrument for 40 minutes to make the surface of the FTO / glass substrate reach "atomic cleanliness". Spin Coating of CuFe on FTO / Glass Substrate ...

Embodiment 3

[0039] Step 1, dissolve copper nitrate and iron nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 35 minutes, and then add acetic anhydride to obtain a stable CuFe nitrate with a Fe ion concentration of 0.35mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3.5:1;

[0040] Step 2, place the Si substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the Si substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. Then put the Si substrate into an oven to bake until dry, take it out and let it stand at room temperature. Then place the clean Si substrate in an ultraviolet light irradiator for 40 minutes to make the surface of the Si substrate reach "atomic cleanliness". Spin-coating CuFe on Si substrate by spin-coating method 2 o 4 Precursor for preparing CuFe 2 o ...

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Abstract

The invention provides a spinel-type tetragonal phase CuFe2O4 ferromagnetic film and a preparation method thereof. Copper nitrate and ferric nitrate are dissolved in ethylene glycol monomethyl ether and acetic anhydride according to the mole ratio of 1:2, stirring is performed to obtain a uniform CuFe2O4 precursor solution, and the spinel-type tetragonal phase CuFe2O4 ferromagnetic film high in density and uniform in grain size is prepared on a substrate by adopting a spin-coating method and a step-by-step annealing process. A sol-gel process is adopted, the device requirements are simple, the film is suitable for making on large surfaces and irregular-shaped surfaces, and chemical components are precisely controllable. The saturation magnetization intensity Ms of the made spinel-type tetragonal phase CuFe2O4 ferromagnetic film is 110 emu / cm<3>, the remanent magnetization intensity Mr is 71 emu / cm<3>, and a coercive force Hc is 810 Oe.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a spinel tetragonal phase CuFe 2 o 4 Ferromagnetic thin film and its preparation method. Background technique [0002] Spinel ferrite belongs to a multifunctional semiconductor material, especially an important magnetic material. The thin film of spinel ferrite exhibits many new characteristics in many aspects such as optical properties, electrical properties, and magnetic properties. Therefore, it is very important to study the spinel-type ferromagnetic thin film in depth and to develop and utilize it. [0003] The spinel ferrite with this structure is derived from a mineral MgAl in nature 2 o 4 It is a mineral that crystallizes in the cubic system. The structure of this spinel crystal was originally determined by Bragg and Nishikawa. This type of spinel ferrite is a crystal composed of a cubic crystal structure, and its chemical molecular formula is MeFe 2 o 4 , whe...

Claims

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Application Information

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IPC IPC(8): H01F41/24H01F41/22H01F10/20
CPCH01F10/20H01F41/22H01F41/24
Inventor 谈国强杨玮晏霞耶维乐忠威任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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