Silicon carbide filtering film and low temperature preparation method thereof

A technology of filtering membrane layer and silicon carbide membrane, applied in the field of porous ceramic materials, can solve the problems of low strength of silicon carbide membrane layer, difficult sintering of silicon carbide, and high sintering temperature, and achieves low cost, easy pore structure and low preparation cost. Effect

Active Publication Date: 2016-06-22
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Most of the existing silicon carbide support filter material film layers are made of oxide materials such as alumina and mullite. In order to better match with the silicon carbide support body, people have always expected to prepare pure silicon carbide film layers, but because silicon carbide is not easy to

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  • Silicon carbide filtering film and low temperature preparation method thereof
  • Silicon carbide filtering film and low temperature preparation method thereof
  • Silicon carbide filtering film and low temperature preparation method thereof

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preparation example Construction

[0041] The preparation method of the pure silicon carbide filter membrane layer of the present invention adopts fine silicon carbide particles, organosilicon precursors, pore-forming agent additives, and organic solvents to prepare the membrane layer raw materials, and adopts a rotary spraying method to prepare the filter membrane on the surface of the filter material support body layer, after drying, sintering and oxidizing to remove the pore-forming agent to obtain a pure silicon carbide filter membrane layer, which mainly includes the following steps:

[0042] (1) Film slurry preparation

[0043] The fine silicon carbide particles, the organosilicon precursor, the pore-forming agent additive, and the organic solvent are blended and stirred according to the mass percentage of (6-4): (5-3): (2-1): (8-6), The film layer slurry is obtained by ball milling, and the ball milling time is 1 to 2 hours, which is then used.

[0044] The particle size of silicon carbide is between 20...

Embodiment 1

[0055] 20nm silicon carbide particles, polymethylsilane, 20nm carbon powder, and xylene were blended in a mass ratio of 4:5:2:8, mechanically stirred, and then ball milled for 1.5 hours to obtain a film layer slurry.

[0056] The slurry is sprayed on the rotating filter material support by using a gas spray gun, the thickness of the film layer is controlled by adjusting the relative displacement speed between the support body and the spray gun, and the surface film layer is obtained after drying. The material flow rate of the spray gun is 10 g / s, and the rotating speed of the filter support tube is 10 rpm / min. The relative displacement speed of the support body and the spray gun is 70mm / min. After spraying, the film layer is dried at 70°C for 1 hour, then heated to 200°C for 2 hours, and the dried film layer is sintered under vacuum. The initial heating rate 1°C / min, heat up to 600°C, keep it warm for 0.5 hours to basically crack the organosilicon precursor; then continue to h...

Embodiment 2

[0060] 40 μm silicon carbide particles, polymethylsilane, 20 μm carbon powder, and toluene were blended in a mass ratio of 5:3:1:6, mechanically stirred and then ball milled for 1 hour to obtain a film layer slurry.

[0061] The slurry is sprayed on the rotating filter material support by using a gas spray gun, the thickness of the film layer is controlled by adjusting the relative displacement speed between the support body and the spray gun, and the surface film layer is obtained after drying. The material flow rate of the spray gun is 20 g / s, and the rotation speed of the filter support tube is 30 rpm / min. The relative displacement speed of the support body and the spray gun is 50mm / min. After spraying, the film layer is dried at 70°C for 1 hour, then heated to 200°C for 2 hours, and the dried film layer is sintered under vacuum. The initial heating rate 3°C / min, raise the temperature to 800°C, keep it warm for 1 hour to basically crack the organosilicon precursor; then con...

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Abstract

The invention belongs to the field of porous ceramic materials and discloses a silicon carbide filtering film and a low temperature preparation method thereof. The silicon carbide filtering film comprises pure SiC, a surface film layer is prepared from fine grain silicon carbide through accumulation, has the pore diameter of 20 nanometers to 20 micrometers and film layer porosity of 40-50% and has high through porosity, low pressure drop, high strength, good thermal shock resistance and a high usage temperature. Film slurry is prepared from fine silicon carbide particles, an organosilicon precursor and a pore forming agent additive, the surface is spray-coated with the film slurry so that a film layer is formed, and the film layer is dried and sintered so that a pure silicon carbide film is obtained. The organosilicon precursor is cracked to produce a coupling phase, a sintering temperature is low, an aperture structure can be controlled easily, and the film layer can be used in an oxidation atmosphere and in a reduction atmosphere, has strong acid and base resistance and can be used for various high and low temperature fluid filtering purification such as coal gasification chemical engineering, IGCC and PFBC coal gasification generating, and high temperature flue gas, automobile exhaust and water purification.

Description

technical field [0001] The invention belongs to the field of porous ceramic materials, in particular to a silicon carbide filter membrane layer and a low-temperature preparation method thereof. Background technique [0002] High-temperature ceramic filter materials generally work under various harsh environmental conditions. As a high-temperature ceramic filter material for gas purification, it is usually required to have: (1) High mechanical strength, high temperature resistance (300-900°C) and excellent medium corrosion resistance Performance; (2) High filtration accuracy, filtration gas velocity and low pressure drop; (3) Easy to blow back, stable operation, high filtration efficiency; (4) Good thermal stability, able to withstand frequent high-pressure pulse cooling Thermal shock caused by blowback of gas. At the same time, according to the requirements of its application, the high-temperature ceramic filter must be able to withstand the influence of changes in the chem...

Claims

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Application Information

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IPC IPC(8): C04B38/06C04B35/565B01D71/02B01D67/00
Inventor 张劲松田冲曹小明杨振明刘强
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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