Silicon carbide filtering film and low temperature preparation method thereof
A technology of filtering membrane layer and silicon carbide membrane, applied in the field of porous ceramic materials, can solve the problems of low strength of silicon carbide membrane layer, difficult sintering of silicon carbide, and high sintering temperature, and achieves low cost, easy pore structure and low preparation cost. Effect
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[0041] The preparation method of the pure silicon carbide filter membrane layer of the present invention adopts fine silicon carbide particles, organosilicon precursors, pore-forming agent additives, and organic solvents to prepare the membrane layer raw materials, and adopts a rotary spraying method to prepare the filter membrane on the surface of the filter material support body layer, after drying, sintering and oxidizing to remove the pore-forming agent to obtain a pure silicon carbide filter membrane layer, which mainly includes the following steps:
[0042] (1) Film slurry preparation
[0043] The fine silicon carbide particles, the organosilicon precursor, the pore-forming agent additive, and the organic solvent are blended and stirred according to the mass percentage of (6-4): (5-3): (2-1): (8-6), The film layer slurry is obtained by ball milling, and the ball milling time is 1 to 2 hours, which is then used.
[0044] The particle size of silicon carbide is between 20...
Embodiment 1
[0055] 20nm silicon carbide particles, polymethylsilane, 20nm carbon powder, and xylene were blended in a mass ratio of 4:5:2:8, mechanically stirred, and then ball milled for 1.5 hours to obtain a film layer slurry.
[0056] The slurry is sprayed on the rotating filter material support by using a gas spray gun, the thickness of the film layer is controlled by adjusting the relative displacement speed between the support body and the spray gun, and the surface film layer is obtained after drying. The material flow rate of the spray gun is 10 g / s, and the rotating speed of the filter support tube is 10 rpm / min. The relative displacement speed of the support body and the spray gun is 70mm / min. After spraying, the film layer is dried at 70°C for 1 hour, then heated to 200°C for 2 hours, and the dried film layer is sintered under vacuum. The initial heating rate 1°C / min, heat up to 600°C, keep it warm for 0.5 hours to basically crack the organosilicon precursor; then continue to h...
Embodiment 2
[0060] 40 μm silicon carbide particles, polymethylsilane, 20 μm carbon powder, and toluene were blended in a mass ratio of 5:3:1:6, mechanically stirred and then ball milled for 1 hour to obtain a film layer slurry.
[0061] The slurry is sprayed on the rotating filter material support by using a gas spray gun, the thickness of the film layer is controlled by adjusting the relative displacement speed between the support body and the spray gun, and the surface film layer is obtained after drying. The material flow rate of the spray gun is 20 g / s, and the rotation speed of the filter support tube is 30 rpm / min. The relative displacement speed of the support body and the spray gun is 50mm / min. After spraying, the film layer is dried at 70°C for 1 hour, then heated to 200°C for 2 hours, and the dried film layer is sintered under vacuum. The initial heating rate 3°C / min, raise the temperature to 800°C, keep it warm for 1 hour to basically crack the organosilicon precursor; then con...
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