Preparation method of organic semiconductor material
A technology of organic semiconductors and organic palladium, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as shortages, and achieve the effects of reduced manufacturing costs, improved luminous efficiency, and easy availability of raw materials
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[0025] The invention provides a method for preparing an organic semiconductor material, comprising the steps of:
[0026] Provides compound A: and compound B: Among them, R is C 1 ~C 20 Under an inert atmosphere, compound A and compound B are added into an organic solvent containing a catalyst and an alkali solution in a molar ratio of 1:1 to 1:1.2, and the Suzuki coupling reaction is carried out at 70 to 130°C for 12 to In 96 hours, the catalyst was organic palladium or a mixture of organic palladium and organophosphorus ligand, and obtained the organic semiconductor material P represented by the following structural formula:
[0027] However, n is an integer of 10-100.
[0028] In a specific embodiment, the preparation method of the organic semiconductor material further includes the step of separating and purifying the organic semiconductor material P, and the separation and purification step is as follows: the solution after the Suzuki coupling reaction is carried ...
Embodiment 1
[0041] This embodiment discloses poly{4-n-hexaneoxy-N, N-bis(4-yl-phenyl)aniline-co-3,7-diylthiooxyfluorene} (organic semiconductor material P1) with the following structural formula:
[0042]
[0043] The preparation process of the above-mentioned organic semiconductor material P1 is as follows:
[0044] Under the protection of argon, 4-n-hexaneoxy-N,N-bis(4-pinacol borate phenyl)aniline (119mg, 0.2mmol), 3,7-dibromothiooxyfluorene (75mg, 0.2mmol) was added into a flask filled with 10ml of toluene solvent, and after fully dissolving, potassium carbonate (2mL, 2mol / L) solution was added into the flask, vacuumed to remove oxygen and filled with argon, and then added bistriphenylphosphine di Palladium chloride (5.6 mg, 0.008 mmol); the flask was heated to 100° C. for Suzuki coupling reaction for 48 h. After cooling down, the polymerization reaction was stopped, and 50ml of methanol was added dropwise to the flask for sedimentation; after being filtered through a Soxhlet extr...
Embodiment 2
[0052] This embodiment discloses poly{4-methoxyl-N,N-bis(4-yl-phenyl)aniline-co-3,7-diylthiooxyfluorene} (organic semiconductor material P2) with the following structural formula:
[0053]
[0054] Under the protection of a mixed gas of nitrogen and argon, 4-methaneoxy-N, N-bis(4-pinacol borate phenyl)aniline (158 mg, 0.3 mmol), 3,7-dibromothioxfluorene (112mg, 0.3mmol) and 15mL of tetrahydrofuran were added to a 50mL two-necked bottle, and after fully dissolving, a mixture of nitrogen and argon was introduced to exhaust the air for about 20 minutes, and then tetrakistriphenylphosphine palladium (4mg, 0.003mmol) was added Wherein, sodium bicarbonate (3 mL, 2 mol / L) solution was added after fully dissolving. After the mixed gas of nitrogen and argon was sufficiently exhausted for about 10 minutes, the two-necked flask was added to 70° C. for Suzuki coupling reaction for 96 hours. After cooling down, the polymerization reaction was stopped, and 40ml of methanol was added dro...
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