High-efficiency, low-cost perovskite-type solar cell and preparation method for same

A solar cell, perovskite type technology, applied in the field of solar cells, can solve the problems of affecting the photoelectric conversion efficiency of solar cells, affecting the photoelectric performance of solar cells, many pinholes in perovskite films, etc., so as to improve the photoelectric performance and photoelectric conversion. High efficiency and high hole mobility

Active Publication Date: 2016-08-03
ANHUI HUASUN ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the Spiro-OMeTAD material is expensive and has poor stability, and the perovskite film prepared by the traditional method has many pinholes, large roughness, and poor quality, which seriously affects the photoelectric conversion efficiency of the solar cell, and the perovskite film The interface between the light-absorbing layer and the electron-transporting layer also recombines electrons and holes, which affects the photoelectric performance of solar cells.

Method used

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Examples

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Comparison scheme
Effect test

Embodiment 1

[0026] A method for preparing a high-efficiency and low-cost perovskite solar cell, comprising the following steps:

[0027] (1) Soak the FTO substrate in deionized water, acetone and isopropanol solution successively and ultrasonically, and finally dry it with nitrogen and treat it with ultraviolet ozone for 15 minutes, and set it aside;

[0028] (2) Spin-coat the aluminum-doped zinc oxide solution on the conductive substrate at a speed of 2000 rpm, anneal at a low temperature of 70-75°C for 10 minutes, and then spin-coat the zinc oxide solution on the aluminum alloy at a speed of 3000 rpm. On the magnesium-doped zinc oxide layer, anneal at 70-75°C for 15 minutes to obtain an electron transport layer;

[0029] (3) Al with a concentration of 10mmol / L 2 o 3 The precursor solution was added dropwise onto the electron transport layer, left to stand for 30s, then spin-coated at 1000 rpm for 30s, sintered at 450°C for 50min, and cooled to room temperature to obtain an insulating ...

Embodiment 2

[0034] A method for preparing a high-efficiency and low-cost perovskite solar cell, comprising the following steps:

[0035] (1) Soak the FTO substrate in deionized water, acetone and isopropanol solution successively and ultrasonically, and finally dry it with nitrogen and treat it with ultraviolet ozone for 15 minutes, and set it aside;

[0036] (2) Spin-coat the solution of manganese mixed with zinc oxide on the conductive substrate at a speed of 4000 rpm, anneal at a low temperature of 70-75 ° C for 15 minutes, and then spin-coat the solution of zinc oxide on the manganese at a speed of 5000 rpm On the doped zinc oxide layer, anneal at 70-75°C for 15 minutes to obtain an electron transport layer;

[0037] (3) Al with a concentration of 30mmol / L 2 o 3 Add the precursor solution dropwise onto the electron transport layer, let it stand for 50s, then spin-coat it at 3000 rpm for 30s, sinter at 500°C for 100min, and cool to room temperature to obtain an insulating buffer laye...

Embodiment 3

[0042] A method for preparing a high-efficiency and low-cost perovskite solar cell, comprising the following steps:

[0043] (1) Soak the FTO substrate in deionized water, acetone and isopropanol solution successively and ultrasonically, and finally dry it with nitrogen and treat it with ultraviolet ozone for 15 minutes, and set it aside;

[0044] (2) Spin-coat the aluminum-magnesium-doped titanium oxide solution on the conductive substrate at a speed of 2500 rpm, anneal at a low temperature of 70-75°C for 11 minutes, and then spin-coat the titanium oxide solution on the conductive substrate at a speed of 3500 rpm. On the aluminum-doped titanium oxide layer, anneal at 70-75°C for 15 minutes to obtain an electron transport layer;

[0045] (3) Al with a concentration of 15mmol / L 2 o 3 The precursor solution was added dropwise onto the electron transport layer, left to stand for 35s, then spin-coated at 1500 rpm for 30s, sintered at 455°C for 60min, and cooled to room temperatu...

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PUM

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Abstract

The invention discloses a high-efficiency, low-cost perovskite-type solar cell which comprises a conducting substrate, an electronic transmission layer, an insulating buffer layer, a perovskite light absorption layer, a hole transport layer and a metal electrode, wherein the perovskite light absorption layer is prepared by a gas-phase auxiliary solution method; and the hole transport layer is a composite layer made of copper acetylacetonate and Spiro-OMeTAD. The invention also discloses a preparation method for the high-efficiency, low-cost perovskite-type solar cell. The perovskite-type solar cell prepared in the invention has the advantages of high photoelectric conversion efficiency, high stability, simple preparation technologies and low cost.

Description

Technical field: [0001] The invention relates to the field of solar cells, in particular to a perovskite solar cell with high efficiency and low cost. Background technique: [0002] Perovskite solar cells are a new type of solar cells developed on the basis of dye-sensitized solar cells (DSSC). It was first proposed by Japanese scientist Kojima et al. in 2009. Its structure is completely applied to DSSC batteries, but the commonly used organic dyes are replaced by CH 3 NH 3 PB 3 or CH 3 NH 3 PbBr 3 Instead, its general photoelectric conversion efficiency exceeds 3%. Lead methylamine halide (CH 3 NH 3 wxya 3 ) has a perovskite structure, so this type of solar cell is called a perovskite solar cell. Methylamine lead halide has a suitable band gap (CH 3 NH 3 PB 3 The band gap is 1.5eV, CH 3 NH 3 PbBr 3 Bandgap width of 2.3eV) and higher light absorption coefficient, accompanied by the introduction of organic hole semiconductor transport materials, especially the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/00H10K30/00Y02E10/549Y02P70/50
Inventor 王文庆
Owner ANHUI HUASUN ENERGY CO LTD
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