Transparent conductive film as well as preparation method and application thereof

A technology of transparent conductive film and conductive film, which is applied in the direction of oxide conductors, non-metallic conductors, ion implantation plating, etc., can solve the problems of poor conductivity and light transmittance, and can not achieve the effect, so as to achieve the improvement of conductivity and preparation method The effect of simple and easy operation and low production cost

Inactive Publication Date: 2016-12-07
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Titanium dioxide-based films have been widely used in photocatalysis and other applications due to their excellent photoelectric properties, low cost and abundant resources. However, as conductive films, their conductivity and light transmission are poor, and good results cannot be achieved.

Method used

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  • Transparent conductive film as well as preparation method and application thereof
  • Transparent conductive film as well as preparation method and application thereof
  • Transparent conductive film as well as preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] For the transparent conductive film of this example, a niobium-doped titanium dioxide film was prepared by magnetron sputtering, and then treated with ruthenium chloride to obtain a ruthenium-doped and niobium-doped titanium dioxide film. details as follows:

[0040] (1) Titanium dioxide powder and niobium pentoxide powder are used as the main raw materials, the purity is 4N-5N, and the molar ratio of Ti:Nb is 9:1. After mixing, it is ground to make it evenly mixed. Then put it into a high-temperature silicon-molybdenum furnace and pre-fire at 820°C for 3 hours; after completion, add 5mL of polyvinyl alcohol as a polymerizer, press it into a circular target with a thickness of 4.5mm and a diameter of 5cm with a powder tablet press, and then put it into a high-temperature silicon-molybdenum target. Sinter in a molybdenum furnace at 5°C / min to 1350°C for 5h. After cooling, fix a 0.5mm thick copper backing to prepare a niobium-doped titanium dioxide target. (2) The obtain...

Embodiment 2

[0044] The transparent conductive film of this example is prepared by magnetron sputtering method to prepare tantalum-doped titanium dioxide film, and then treated with ruthenium chloride to obtain ruthenium-doped and tantalum-doped titanium dioxide film. details as follows:

[0045] (1) The tantalum source in this example is tantalum pentoxide with a purity of 4N to 5N. The Ti:Ta molar ratio is 19:1, and the tantalum-doped titanium dioxide target is prepared by the same method as in Example 1. (2) Then magnetron sputtering is performed on the tantalum-doped titanium dioxide target to prepare a tantalum-doped titanium dioxide film. The magnetron sputtering conditions are as follows: the pressure of the sputtering chamber is 1.0Pa, the atmosphere of the sputtering chamber is argon, and the substrate is Soda lime silica glass, substrate temperature is 50°C, sputtering power is 0.3W / cm 2 , the deposition rate was 8nm / min, the sputtering time was 1h, and a tantalum-doped titanium...

Embodiment 3

[0049] For the transparent conductive film of this example, niobium and tantalum-doped titanium dioxide films were prepared by magnetron sputtering, and then treated with ruthenium chloride to obtain ruthenium-doped, niobium-doped and tantalum-doped titanium dioxide films. details as follows:

[0050] (1) The source of niobium in this example is niobium pentoxide, the source of tantalum is tantalum pentoxide, the purity is 4N-5N, and the molar ratio of Ti:Nb:Ta is 18:1:1. The same ingredients as in Example 1 are used. The preparation method of niobium and tantalum doped titania targets. (2) Then magnetron sputtering was performed on niobium and tantalum doped titanium dioxide targets to prepare tantalum doped titanium dioxide films. The bottom is soda-lime-silica glass, the substrate temperature is 200°C, the sputtering power is 0.3W / cm2, the deposition rate is 8nm / min, and the sputtering time is 1h, and a niobium and tantalum doped titanium dioxide film with a thickness of 4...

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Abstract

The invention discloses a transparent conductive film doped with titanium dioxide as well as a preparation method thereof and an application thereof. The transparent conductive film is a film doped with titanium dioxide, wherein doping is ruthenium doping as well as niobium and / or tantalum doping. According to the transparent conductive film disclosed by the invention, the titanium dioxide is doped with ruthenium, and is also doped with one or two of niobium and tantalum, so that the prepared film doped with titanium dioxide has excellent electrical conductivity, good temperature resistance and high light transmittance; and moreover, the transparent conductive film disclosed by the invention is low in raw material cost and is rich in resource; and the preparation method for the transparent conductive film is simple and easy to operate, can meet needs of large-scale batch production, and lays a foundation for popularization, application and research of the transparent conductive film.

Description

technical field [0001] The present application relates to the field of transparent conductive films, in particular to a transparent conductive film and its preparation method and application. Background technique [0002] With the rapid development of the flexible display industry worldwide, the demand for large-area transparent conductive oxide (abbreviated as TCO) glass substrates will maintain rapid growth for a long time. According to preliminary estimates, by 2020, the worldwide demand for TCO glass substrates will exceed 1.2 billion square meters. The transparent conductive films widely used in the industry currently mainly include three categories: indium tin oxide (abbreviated ITO), zinc aluminum oxide (abbreviated AZO) and fluorine-doped tin oxide (abbreviated FTO). Among them, the application of ITO is greatly limited due to the large amount of expensive indium material used. The photoelectric properties of FTO and AZO systems are close to the level of ITO, and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35H01B1/08
CPCC23C14/08C23C14/35H01B1/08C23C14/083C23C14/3414
Inventor 潘锋梁军杨晓杨
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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