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Oxide semiconductor film and preparation method thereof

A technology of oxide semiconductor and oxide film, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, ion implantation plating, etc., can solve the problems of unsuitable preparation of TFT devices, changes in performance parameters, and high carrier concentration. Achieve the effects of reducing carrier concentration, simplifying production process, and high mobility

Active Publication Date: 2016-12-07
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Studies have found that the mobility of the binary oxide indium zinc oxide (IZO) is much greater than that of the ternary oxide IGZO, but due to its high carrier concentration, and it is easily affected by light and gate voltage during use, the performance parameters will change. Change, that is, poor stability, so it is not suitable for the preparation of TFT devices

Method used

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  • Oxide semiconductor film and preparation method thereof
  • Oxide semiconductor film and preparation method thereof
  • Oxide semiconductor film and preparation method thereof

Examples

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preparation example Construction

[0028] An embodiment of the present invention provides a method for preparing a sputtering target, including:

[0029] Will In 2 o 3 Powder, CeO 2 The powder and the ZnO powder are uniformly mixed to form a mixture, and the molar ratio of In:Ce:Zn in the mixture is 2:(0.5~2):1; and

[0030] The mixture is sintered at 1250°C~1650°C.

[0031] In this mixture, the In 2 o 3 Powder, CeO 2 The particle size of the powder and the ZnO powder is preferably less than or equal to 10 microns, more preferably 0.5 microns to 2 microns.

[0032] The In 2 o 3 Powder, CeO 2 The purity of the powder and the ZnO powder is preferably 3N (99.9% by mass) to 5N (99.999% by mass).

[0033] The In 2 o 3 Powder, CeO 2 The molar ratio of powder and ZnO powder is In 2 o 3 : CeO 2 : ZnO =2: (1 ~4): 2.

[0034] The In 2 o 3 Powder, CeO 2 Powder and ZnO powder can be in air or protective gas (such as Ar gas or N 2 gas), the mixing step may further include:

[0035] the In 2 o 3 Powde...

Embodiment 1

[0068] Embodiment 1: sputtering target and preparation method thereof

Embodiment 1-1

[0070] Weigh 209g In with a purity of 4N 2 o 3 Powder, 260g CeO 2 powder and 61g ZnO powder (the molar ratio of the three oxides is In 2 o 3 : CeO 2 : ZnO =1:2:1), put the three powders into the ball mill jar and mix. The ball milling medium is absolute ethanol, the ball milling speed is 200 rpm, and the ball milling time is 10 h. After ball milling, it was dried under the protection of Ar gas with a pressure of 1 atm and a purity of 5N for 1 h. After drying, put the powder into a hot-press sintering furnace, and carry out hot-press sintering in an atmosphere of high-purity Ar gas. . After sintering, the furnace was cooled to room temperature for sampling. The relative density of the target is >87%, and the bulk resistance is 0.75Ωcm. The target is used for medium frequency AC magnetron sputtering, the arc is easy to start and the sputtering is stable.

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Abstract

The present invention relates to an oxide semiconductor film containing an indium element (In), a cerium element (Ce), a zinc element (Zn) and an oxygen element (O), and the molar ratio of In to Ce and Zn is 2: (0: 5-2): 1. The oxide semiconductor film is an n-type semiconductor having a carrier concentration of 1012 cm-3 to 1020 cm-3 and a carrier mobility of 5.0 cm2V-1s-1 to 45.0 cm2V-1s-1. The invention also relates to a preparation method for such an oxide semiconductor film.

Description

technical field [0001] The invention relates to an oxide semiconductor film and a preparation method thereof. Background technique [0002] With the rapid development of information technology, flat panel display technology is developing towards higher resolution, faster response speed, lower energy consumption, fully transparent devices and flexible display, which also has a great impact on active drive display (such as AMLCD, Active Matrix The performance of TFT (thin film transistor) devices in Liquid Crystal Display puts forward higher requirements. Conventional amorphous silicon TFT due to its low mobility (~ 0.5cm 2 V -1 the s -1 ) characteristics cannot meet the display requirements of high-resolution, large-size LCD, and limit its application in AMOLED (Active Matrix Organic Light Emitting Diode) display. Although the low-temperature polysilicon TFT has high mobility, its production cost is too high, and it is difficult to ensure large-area uniformity, so it is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L21/02
CPCC03C17/245C03C2217/23C03C2218/154C04B35/01C04B35/453C04B35/50C04B35/6261C04B35/645C04B2235/3229C04B2235/3284C04B2235/3286C04B2235/6562C04B2235/72C04B2235/77C23C14/08C23C14/086C23C14/3414C23C14/5806H01L21/02554H01L21/02565H01L21/02631H01L29/24H01L29/247H01L29/66969H01L29/7869C23C14/34C23C14/35H01L21/324
Inventor 庄大明赵明曹明杰郭力高泽栋魏要伟
Owner TSINGHUA UNIV