A kind of wave-absorbing multilayer film and its preparation method
A multi-layer thin film and thin film technology is applied in coating, metal material coating process, application of magnetic film to substrate, etc. It can solve difficult problems such as widening resonance absorption frequency, high resonance absorption frequency, and difficulties
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Embodiment 1
[0019] Embodiment 1: the preparation of the wave-absorbing multilayer film of FeNi and FeCoSiB
[0020] Step 1. The Si(111) substrate with a size of 15mm×5mm×0.5mm was ultrasonically cleaned with acetone for 5 minutes, ultrasonically cleaned with absolute ethanol for 5 minutes, and then rinsed with deionized water for 5 times. After the deionized water on the surface was blown off with compressed air, the Si substrate was fixed on the deposition stage in the magnetron sputtering chamber. The sputtering target was FeNi, a magnetic alloy target, and the sputtering background vacuum was 5× 10 -5 Pa, pass in argon gas with a purity greater than or equal to 99.99% to make the sputtering vacuum 0.3Pa, use DC magnetron sputtering, set the sputtering power to 60W, and apply a static magnetic field of 1000Oe along the short axis of the silicon wafer; sputtering rate Be 8.82 nanometers / minute, sputter 4 minutes 32 seconds, obtain the substrate that sputtering has the thick FeNi film of...
Embodiment 2
[0024] The other preparation conditions of Example 2 are the same as those of Example 1. Set the sputtering time in Step 4 to 3 minutes, take out the substrate, put it in acetone for ultrasonic cleaning, rinse it with alcohol, and dry the surface with an ear cleaning ball , to obtain FeNi, SiO with thicknesses of 40nm, 10nm, and 40nm respectively 2 , FeCoSiB three-layer absorbing film material.
Embodiment 3
[0025] The other preparation conditions of Example 3 are the same as those of Example 1. Set the sputtering time in Step 4 to 1 minute and 30 seconds, take out the substrate, put it in acetone for ultrasonic cleaning, rinse it with alcohol, and blow it with an ear washing ball. Dry the surface to obtain FeNi, SiO with a thickness of 40nm, 10nm, and 20nm respectively 2 , FeCoSiB three-layer absorbing film material.
[0026] Test the thin film material that makes in the above-mentioned embodiment through short-circuit microstrip line method and obtain as follows image 3 As shown in the test diagram of the imaginary part of magnetic permeability, the present invention is not limited to the absorption frequency (1.96~2.13GHz) of FeCoSiB, and two resonance peaks are obtained, and the resonance frequency of the second peak is between 4.5GHz and 5GHz, effectively obtaining high frequency absorption frequency; this method can also combine more layers to obtain a broadband high-frequ...
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