Method for preparing titanium dioxide thin films through room temperature sputtering method

A titanium dioxide and sputtering technology, which is used in sputtering coating, semiconductor/solid-state device manufacturing, vacuum evaporation coating, etc., can solve the problems of harsh conditions and high synthesis temperature, and achieves reduced interface resistance, simple preparation process, and thickness. Continuously adjustable effects

Inactive Publication Date: 2017-01-04
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the high synthesis temperature and harsh conditions of the technical method of the titanium dioxide electron transport layer in the prior art, the purpose of the present invention is to provide a method for rapidly depositing and preparing titanium dioxide nano-films of different crystallinity without any heating

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  • Method for preparing titanium dioxide thin films through room temperature sputtering method
  • Method for preparing titanium dioxide thin films through room temperature sputtering method
  • Method for preparing titanium dioxide thin films through room temperature sputtering method

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preparation example Construction

[0044] Compared with traditional preparation methods, perovskite solar cells based on this thin film have higher fill factor and short-circuit current, and the photoelectric conversion efficiency of the cell is higher. The room temperature sputtering method not only simplifies the traditional battery preparation process and saves costs, but also can improve the performance of the thin-film battery, which is conducive to promoting the market application of perovskite solar cells.

[0045] Advantages of the invention;

[0046] The film preparation conditions are mild, the equipment is simple, and resources and energy are saved;

[0047] The magnetron sputtering method has a short preparation period and can be continuously controlled, not limited by the substrate size and film uniformity;

[0048] The preparation process of the magnetron sputtering method is simple, high stability, good repeatability, and the market application prospect is bright;

[0049] The titanium dioxide ...

Embodiment 1

[0052] The substrate (FTO glass) was ultrasonically cleaned, and after the substrate was ultrasonically cleaned with acetone and absolute ethanol for 30 minutes, it was fixed on the substrate plate in an orderly manner, put into the sample chamber, and then opened the gate and loaded to a vacuum degree ( background vacuum) has reached 10 －4 In the deposition chamber below Pa. Introduce oxygen and argon at a ratio of 1:6, control the total pressure to 1.5Pa, the distance between the target and the substrate is 8cm, and the initial chamber temperature is kept at room temperature (15-35°C) and the DC power supply ( Electric power is 675W), sputtering pure titanium target material, deposition time is 15min, obtains completely amorphous titanium dioxide thin film, as Figure 2D shown. Subsequently, the perovskite absorber material was prepared by vacuum evaporation, the hole transport material was prepared by spin coating, and the back electrode (Ag) was prepared by vacuum evapor...

Embodiment 2

[0054] The substrate (FTO glass) was ultrasonically cleaned, and after the substrate was ultrasonically cleaned with acetone and absolute ethanol for 30 minutes, it was fixed on the substrate plate in an orderly manner, put into the sample chamber, and then opened the gate and loaded to a vacuum degree ( background vacuum) has reached 10 －4 In the deposition chamber below Pa. Introduce oxygen and argon at a ratio of 1:6, control the total pressure at 1.5Pa, and keep the distance between the target and the substrate at 8cm. The initial chamber temperature is kept at room temperature and the DC power supply (electric power is 700W) is turned on. Sputtering The pure titanium target is irradiated, and the deposition time is 15min, and a partially crystallized titanium dioxide film is obtained, and the XRD pattern is as follows Figure 2D Shown, according to crystallinity empirical formula:

[0055] R = X / Y ...

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Abstract

The invention relates to a method for preparing titanium dioxide thin films through a room temperature sputtering method. The titanium dioxide thin films with different degrees of crystallinity are prepared through the direct current magnetron sputtering method. A target material is a pure titanium target; the background vacuum degree is 10<-4> Pa or less; sputtering gas is argon and oxygen; the total pressure intensity is 0.5-2.5 Pa; the oxygen partial pressure is 50% or less; the distance between the target material and a base material is 7-20 cm; the initial temperature of the base material is 15-35 DEG C; the power of a direct current power source applied to the target material is 300-900 W; and the depositing time is 5-30 min. The complete amorphous or partial crystallographic titanium dioxide thin films are obtained. According to the method for preparing the titanium dioxide thin films through the room temperature sputtering method, the thin film preparation condition is mild, equipment is simple, and resources and energy sources are saved.

Description

technical field [0001] The invention belongs to the field of inorganic nanometer materials, and in particular relates to a method for preparing titanium dioxide films with different crystallinities by sputtering at room temperature, which is used for dense layers of perovskite solar cells. Background technique [0002] In recent years, under the background of gradually intensifying energy crisis and deepening environmental pollution, the global field of optoelectronic research has made great progress, and has become one of the most promising and strategic research hotspots in this century. In this field, due to low cost, simple process and excellent performance, perovskite solar cells have become a research hotspot in the field of optoelectronic devices. The solar conversion efficiency of the solar cell first proposed in 2009 was only 4%. After 7 years of development, the certified efficiency has now reached 22%, surpassing the current photoelectric conversion efficiency of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/54H01L51/48
CPCC23C14/0036C23C14/083C23C14/35C23C14/542H10K71/00Y02E10/549
Inventor 金平实黄爱彬雷磊周奕杰包山虎
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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