Chemical polishing method for gallium arsenide substrate

A chemical polishing, gallium arsenide technology, applied in the field of material processing, can solve the problems of poor control of corrosion rate, increase product cost, increase optoelectronic performance, etc., to improve the phenomenon of electrode loss, improve product yield, and improve optoelectronic performance. Effect

Inactive Publication Date: 2017-01-18
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the corrosion rate of this method is not easy to control, and it is prone to dirty corrosion, which will undoubtedly affect the final photoelectric performance of the device and reduce the product yield.
[0006] Chinese patent document CN105382676A discloses a gallium arsenide wafer polishing method, which needs to be realized by means of an oxidant, a reducing agent, and a high-cost mechanical polishing machine. In high-end materials or devices, it is not suitable for polishing red LED gallium arsenide substrates. This method not only increases the product cost, but also complicates the operation, which is not conducive to improving production efficiency.
[0007] Chinese patent document CN102618936A discloses a chemical etching method for a gallium arsenide substrate. The method describes that the gallium arsenide substrate is corroded with ammonia water, hydrogen peroxide, and water as corrosive liquids to obtain a roughened substrate surface and increase the photoelectricity. performance, this method is used to make the surface structure of the LED substrate, and the corrosion rate is fast, it is not easy to control, and because the ammonia water is volatile and irritating, it has a great impact on the environment, and it needs to be carried out in a closed ventilation device. , is not conducive to the operation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical polishing method for gallium arsenide substrate
  • Chemical polishing method for gallium arsenide substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A kind of chemical polishing method of gallium arsenide substrate, comprises steps as follows:

[0037] (1) Scrub the gallium arsenide substrate after the thinning process and dry it with nitrogen gas with a purity of 99.9%, and measure the thickness h of the substrate 1 It is 232.5μm, and there is no black particles and other impurities on the surface when observed under a microscope;

[0038] Use sodium hydroxide solid with a purity of 96% to configure an aqueous sodium hydroxide solution with a mass concentration of 35%. During the configuration process, the sodium hydroxide solid is first added to the beaker, and then slowly added with a conductivity of 0.17μs / cm (25°C). Deionized water and stirring continuously, after the sodium hydroxide solid is completely dissolved, let it stand for 38 minutes for later use, and store at an ambient temperature of 26°C;

[0039] Slowly add hydrogen peroxide with a purity of 30% to the prepared aqueous sodium hydroxide solution, ...

Embodiment 2

[0046] A kind of chemical polishing method of gallium arsenide substrate, comprises steps as follows:

[0047] (1) Scrub the gallium arsenide substrate after the thinning process and dry it with nitrogen gas with a purity of 99.9%, and measure the thickness h of the substrate 1 It is 209.8μm, and there are no impurities such as black particles on the surface observed under a microscope;

[0048] Use potassium hydroxide solid with a purity of 98% to configure a potassium hydroxide aqueous solution with a mass concentration of 50%. During the configuration, the potassium hydroxide solid is first added to the beaker, and then slowly added with a conductivity of 0.15μs / cm (25°C). Deionized water and stirring continuously, after the potassium hydroxide solid is completely dissolved, let it stand for 45 minutes for later use, and store at an ambient temperature of 25°C;

[0049] Slowly add hydrogen peroxide with a purity of 32% to the prepared potassium hydroxide aqueous solution, ...

Embodiment 3

[0056] A kind of chemical polishing method of gallium arsenide substrate, comprises steps as follows:

[0057] (1) Scrub the gallium arsenide substrate after the thinning process and dry it with nitrogen gas with a purity of 99.9%, and measure the thickness h of the substrate 1 It is 171.5μm, and there is no black particles and other impurities on the surface when observed under a microscope;

[0058] Use sodium hydroxide solid with a purity of 97% to configure an aqueous sodium hydroxide solution with a mass concentration of 65%. During the configuration, the sodium hydroxide solid is first added to the beaker, and then slowly added with a conductivity of 0.12μs / cm (25°C). Deionized water and stirring continuously, after the sodium hydroxide solid is completely dissolved, let it stand for 54 minutes for use, and store at an ambient temperature of 23°C;

[0059] Slowly add hydrogen peroxide with a purity of 30% to the prepared aqueous sodium hydroxide solution, and stir conti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Conductivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Conductivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a chemical polishing method for gallium arsenide substrate. The method comprises the following steps: firstly, cleaning a thinned gallium arsenide substrate and drying it with nitrogen; and then preparing a mixed aqueous solution of strong bases and hydrogen peroxide as polishing liquid; placing the gallium arsenide substrate to be polished in the polishing liquid; and based on the concentration of the strong bases and hydrogen peroxide in the polishing liquid and through the control of the polishing time, controlling the polishing thickness. The method of the invention can be operated simply and conveniently for safe performances. Without generating excitant smells, the method achieves a high polishing speed. All the method requires is to use strong bases, hydrogen peroxide and de-ionized water for the surface polishing of a thinned gallium arsenide substrate and the removal of gallium arsenide particles that are hard to wash away. Therefore, it is possible to avoid the influence on the following electrode evaporation effect and increase the combination performance of the interfaces, therefore, preventing a chip losing electrodes and raising the qualification rate of products.

Description

technical field [0001] The invention relates to a chemical polishing method for a gallium arsenide substrate for LEDs, belonging to the technical field of material processing. Background technique [0002] As a new type of high-efficiency solid-state light source, LED has the advantages of high efficiency, energy saving, environmental protection, long life, safety, rich colors, small size, fast response, and good vibration resistance. Its appearance is recognized as the most promising development in the 21st century. One of the high-tech fields. Due to the advantages of high efficiency, energy saving and long life of LED, it has gradually entered thousands of households. If LEDs are used to replace traditional incandescent lighting, more than 90% of electric energy will be saved. Therefore, promoting the application process of LED lighting is conducive to greatly reducing energy consumption and environmental pollution, and has great strategic significance for the sustainabl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02
CPCH01L21/02013H01L21/02052
Inventor 李倩倩乔世香孔芳芳张秀萍徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap