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Wurtzite manganese selenide nanosheet material and preparation method thereof

A technology of manganese selenide and nanosheets, which is applied in the direction of nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of preparation methods and performance research that have not been reported, and achieve adjustable size, uniform particle size distribution, good crystallinity

Active Publication Date: 2017-02-22
NANJING INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The transition metal selenide nanomaterials with two-dimensional structure have unique optical, electrical and magnetic properties, but the preparation methods and properties of two-dimensional structure MnSe nanosheet materials have not been reported yet.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Add 0.08g Se powder, 0.387g tri-n-octylphosphine oxide and 15.12g octadecene to a reaction flask, connect the reaction flask to the Schlenk system, mix and stir the reaction at 40°C until the black turbid liquid becomes a colorless clear solution, The precursor of the selenium-tri-n-octylphosphine oxide complex was prepared. Weigh 0.63g of anhydrous manganese chloride, 0.036g of oleic acid, 0.034g of oleylamine and 15.12g of octadecene into another reaction flask, and connect the reaction flask to the Schlenk system, stir evenly, and heat up to 170°C until The solution turns into a clear light yellow solution, suck out the prepared selenium-tri-n-octylphosphine oxide complex precursor solution with a syringe and quickly inject it into the manganese precursor reaction bottle, and continue to heat the solution at a heating rate of 3°C / min to 250°C, heat-preserve for 2 hours, and after the solution is cooled, add a large amount of ethanol to the reaction solution, and cent...

Embodiment 2

[0023] Add 0.08g Se powder, 0.426g tri-n-octylphosphine oxide and 16.38g octadecene to a reaction flask, connect the reaction flask to the Schlenk system, mix and stir the reaction at 45°C until the black turbid liquid becomes a colorless clear solution, The precursor of the selenium-tri-n-octylphosphine oxide complex was prepared. Weigh 0.63g of anhydrous manganese chloride, 0.107g of oleic acid, 0.101g of oleylamine and 15.12g of octadecene into another reaction flask, and connect the reaction flask to the Schlenk system, stir evenly, and heat up to 175°C until The solution turned into a clear light yellow solution, and the prepared selenium-tri-n-octylphosphine oxide complex precursor solution was sucked out with a syringe and quickly injected into the manganese precursor reaction bottle, and the solution was continued to be heated at a heating rate of 5°C / min to 250°C, heat-preserve for 1 hour, after the solution is cooled, add a large amount of acetone to the reaction sol...

Embodiment 3

[0025] Add 0.08g Se powder, 0.387g tri-n-octylphosphine oxide and 15.12g octadecene to a reaction flask, connect the reaction flask to the Schlenk system, mix and stir the reaction at 45°C until the black turbid liquid becomes a colorless clear solution, The precursor of the selenium-tri-n-octylphosphine oxide complex was prepared. Weigh 0.63g of anhydrous manganese chloride, 0.071g of oleic acid, 0.067g of oleylamine and 15.12g of octadecene into another reaction flask, and connect the reaction flask to the Schlenk system, stir evenly, and heat up to 170°C until The solution turns into a clear light yellow solution, suck out the prepared selenium-tri-n-octylphosphine oxide complex precursor solution with a syringe and quickly inject it into the manganese precursor reaction bottle, and continue to heat the solution at a heating rate of 3°C / min Reaction at 250°C for 2 hours. After the solution was cooled, a large amount of isopropanol was added to the reaction solution, and cen...

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Abstract

The invention discloses a wurtzite manganese selenide nanosheet material and a preparation method of the wurtzite manganese selenide nanosheet material. The wurtzite manganese selenide nanosheet material is characterized in that the wurtzite manganese selenide nanosheet material is prepared by reaction of divalent manganous salt, selenium, trioctylphosphine oxide and ligand; the crystal structure is ligand wurtzite structure and the shape is a square slice; the wurtzite manganese selenide nanosheet has adjustable dimension. The wurtzite manganese selenide nanosheet prepared by the invention is adjustable in dimension, good in dispersing property, high in phase purity, good in crystallinity, and uniform in grain diameter distribution; the preparation method is simple in operation, short in reaction time, high in repeatability, and others; the invention has a certain application potential in photocatalysis, solar cell, rare magnetic material and other fields.

Description

technical field [0001] The invention belongs to the technical field of inorganic nanometer materials, and in particular relates to a wurtzite manganese selenide nanosheet material and a preparation method thereof. Background technique [0002] Manganese selenide (MnSe) is an important magnetic broadband semiconductor material, which has great application prospects in the fields of optoelectronic devices, fluorescent materials, absorbing materials, solar cells and photocatalysis. MnSe has three crystal structures: rock saltite, sphalerite and wurtzite. At present, rock-salt MnSe is more studied, and there are few reports on sphalerite and wurtzite structure MnSe. Due to the poor stability of sphalerite and wurtzite structure MnSe in the air, it is difficult to prepare sphalerite or wurtzite MnSe with higher purity by physical or chemical methods. At present, researchers have used methods such as solvothermal method, sol-gel method and gas phase layering method to prepare Mn...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2002/20C01P2004/62C01P2004/64
Inventor 卜小海张泽武杭祖圣王经逸吴琼
Owner NANJING INST OF TECH
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