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Bi mixed SnSe/oxidation-reduction graphite composite film and preparation method thereof

A technology for thin film preparation and composites, which is used in coatings, electrical components, circuits, etc. to achieve uniformity, excellent performance, and excellent thin films.

Active Publication Date: 2017-02-22
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no relevant report on the application of this process to the deposition of Bi-doped SnSe / graphene composite films.

Method used

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  • Bi mixed SnSe/oxidation-reduction graphite composite film and preparation method thereof
  • Bi mixed SnSe/oxidation-reduction graphite composite film and preparation method thereof
  • Bi mixed SnSe/oxidation-reduction graphite composite film and preparation method thereof

Examples

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example 1

[0033] The preparation method of the Bi-doped SnSe / redox graphene composite thin film of the present invention comprises the following steps,

[0034] 1. Preparation of precursor solution:

[0035] 1) Sn 2+ Preparation of ionic water solution:

[0036] Press Bi 3+ Ion content is Sn 2+ 2.54at% ratio of ions, dissolving bismuth nitrate in the stannous chloride solution with a concentration of 0.02mol / L to obtain a mixed solution, adding a graphene oxide (GO) aqueous solution with a concentration of 2mg / L in the mixed solution to obtain Sn 2+ Ion aqueous solution; GO aqueous solution was added at 11% of the total volume of the mixed solution, and the final rGO / SnSe mass ratio was 0.05. According to the volume ratio of mixed solution:hydrochloric acid=200:1, add hydrochloric acid with a mass fraction of 33% into the mixed solution, and then add Sn in the mixed solution 2+ Citric acid with 1 times the molar mass of ions.

[0037] 2) Se 2- Preparation of ionic water solution:...

example 2

[0049] The preparation method of the Bi-doped SnSe / redox graphene composite thin film of the present invention comprises the following steps,

[0050] 1. Preparation of precursor solution:

[0051] 1) Sn 2+ Preparation of ionic water solution:

[0052] Press Bi 3+ Ion content is Sn 2+ The 2at% ratio of ions is that bismuth nitrate is dissolved in the tin protochloride solution solution with a concentration of 0.02mol / L to obtain a mixed solution, and a graphene oxide (GO) aqueous solution with a concentration of 2mg / L is added to the mixed solution to obtain Sn 2+ Ion aqueous solution; GO aqueous solution was added at 11% of the total volume of the mixed solution, and the final rGO / SnSe mass ratio was 0.05. According to the volume ratio of mixed solution:hydrochloric acid=200:1, add hydrochloric acid with a mass fraction of 33% into the mixed solution, and then add Sn in the mixed solution 2+ Citric acid with 1 times the molar mass of ions. Get Sn 2+ Ionic aqueous solutio...

example 3

[0061] The preparation method of the Bi-doped SnSe / redox graphene composite thin film of the present invention comprises the following steps,

[0062] 1. Preparation of precursor solution:

[0063] 1) Sn 2+ Preparation of ionic water solution:

[0064] Press Bi 3+ Ion content is Sn 2+ The 4at% ratio of ions is obtained by dissolving bismuth nitrate in the stannous chloride solution with a concentration of 0.02mol / L to obtain a mixed solution, and adding a concentration of 2mg / L to the mixed solution to obtain a graphene oxide (GO) aqueous solution mixed solution sn 2+ Ionic aqueous solution; GO aqueous solution (2 mg / ml) was added according to 11% of the total volume of the mixed solution, and the final rGO / SnSe mass ratio was 0.05. According to the volume ratio of mixed solution:hydrochloric acid=200:1, add hydrochloric acid with a mass fraction of 33% into the mixed solution, and then add Sn in the mixed solution 2+ Citric acid with twice the molar mass of ions. Get S...

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Abstract

The invention discloses a Bi mixed SnSe / oxidation-reduction graphite composite film, which is good in light absorption, low in resistivity, and excellent in conductivity performance; the preparation method is high in efficiency and good in film quality. The preparation method includes a step 1 of preparing a precursor solution; respectively preparing Se2-ionized water solution and Sn2-inoized water solution added to oxidized graphite water solution; a step 2 of depositing the film; under the room temperature, placing a cleaned base slice in a settlement container, and adding equal volume of Sn2+ionized water solution and Se2-ionized water solution to the settlement container; taking out the base slice after 20 min, and completing the film sediment once by de-ionized water spraying; repeatedly depositing for 5-10 times and obtaining a settled film; a step 3 of crystalizing the film; drying the settled film for 1 h at 100 DEG C, or irradiating by 25-40W ultraviolet lamp for 2-3 h and obtaining the crystalized Bi mixed SnSe / oxidation-reduction graphite composite film.

Description

technical field [0001] The invention relates to a light-absorbing conductive film material, specifically a Bi-doped SnSe / redox graphene composite film and a preparation method thereof. Background technique [0002] Light absorbing and conductive materials are widely used in solar cells, photovoltaic cells, photocathode materials and other technical fields. Such materials require good light absorption coefficient and good electrical conductivity. Sulfide and selenide semiconductor thin film materials have high optical absorption coefficient, narrow optical band gap, and good electrical conductivity, and are currently commonly used optoelectronic thin film materials. [0003] SnSe thin film is currently a commonly used binary semiconductor material due to its high optical absorption coefficient, narrow optical band gap, and good electrical conductivity. The conductivity can be further improved by ion doping. Graphene has high electrical conductivity and near-zero optical ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22H01L31/0216
CPCC03C17/22C03C2217/70C03C2218/111H01L31/02168
Inventor 贺海燕贺祯沈清
Owner SHAANXI UNIV OF SCI & TECH