Sputtering target, oxide semiconductor film, preparing method of sputtering target and preparing method of oxide semiconductor film

A technology of oxide semiconductors and sputtering targets, which is applied in the direction of oxide conductors, semiconductor devices, sputtering coating, etc., can solve the problems of unsuitable preparation of TFT devices, changes in performance parameters, high carrier concentration, etc., and reduce The effect of carrier concentration, good semiconductor performance, and high mobility

Active Publication Date: 2017-02-22
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Studies have found that the mobility of the binary oxide indium zinc oxide (IZO) is much greater than that of the ternary oxide IGZO, but due to its high carrier concentration, and it is easily affected by light and gate voltage during use, the performance parameters will change. Change, that is, poor stability, so it is not suitable for the preparation of TFT devices

Method used

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  • Sputtering target, oxide semiconductor film, preparing method of sputtering target and preparing method of oxide semiconductor film
  • Sputtering target, oxide semiconductor film, preparing method of sputtering target and preparing method of oxide semiconductor film
  • Sputtering target, oxide semiconductor film, preparing method of sputtering target and preparing method of oxide semiconductor film

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preparation example Construction

[0028] An embodiment of the present invention provides a method for preparing a sputtering target, including:

[0029] Will In 2 o 3 Powder, CeO 2 The powder, the ZnO powder and the doped metal oxide powder are uniformly mixed to form a mixture, and the molar ratio of In:Ce:Zn in the mixture is 2:(0.5~2):1; and

[0030] The mixture is sintered at 1250°C~1650°C.

[0031] In the mixture, the atomic percentage of the doping metal element M in the total metal elements (ie In+Ce+Zn+M) is 0.5%-1%.

[0032] In this mixture, the In 2 o 3 Powder, CeO 2 The particle size of the powder, the ZnO powder and the doped metal oxide powder is preferably less than or equal to 10 microns, more preferably 0.5 microns to 2 microns.

[0033] The In 2 o 3 Powder, CeO 2 The purity of the powder, the ZnO powder and the doped metal oxide powder is preferably 3N (99.9% by mass) to 5N (99.999% by mass).

[0034] The In 2 o 3 Powder, CeO 2 The molar ratio of powder and ZnO powder is In 2 o ...

Embodiment 1

[0067] Embodiment 1: sputtering target and preparation method thereof

Embodiment 1-1

[0069] Use different doped metal oxides to make 2 kinds of sputtering targets, specifically weighing 209g In with a purity of 4N 2 o 3 Powder, 260g CeO 2 powder and 61g ZnO powder (the molar ratio of the three oxides is In 2 o 3 : CeO 2 : ZnO =1:2:1), and then weigh the doped metal oxide powder with a purity of 4N and accounting for 0.5% of the atomic percentage of the total metal elements. The doped metal oxide powder is HfO 2 and ZrO 2 . Mix the four powders in a ball mill jar. The ball milling medium is absolute ethanol, the ball milling speed is 200 rpm, and the ball milling time is 10 h. After ball milling, it was dried under the protection of Ar gas with a pressure of 1 atm and a purity of 5N for 1 h. After drying, put the powder into a hot-press sintering furnace, and carry out hot-press sintering in a high-purity Ar gas atmosphere, the sintering pressure is 50 MPa, the sintering temperature is 1350 °C, the heating rate is 15 ºC / min, and the sintering time is 5 ...

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Abstract

The invention relates to an oxide semiconductor film. The oxide semiconductor film comprises the element In, the element Ce, the element Zn, the metal-doped element M and the element O, and the molar ratio of the In to the Ce to the Zn is 2: (0.5-2):1. The oxide semiconductor film is an n type semiconductor, the carrier concentration ranges from 10<12>cm<-3> to 10<20>cm<-3>, and the carrier mobility ranges from 5.0 cm<2>V<-1>s<-1> to 46.3 cm<2>V<-1>s<-1>. The invention further relates to a preparing method of the oxide semiconductor film, a sputtering target and a preparing method of the sputtering target.

Description

technical field [0001] The invention relates to a sputtering target, an oxide semiconductor film and a preparation method thereof. Background technique [0002] With the rapid development of information technology, flat panel display technology is developing towards higher resolution, faster response speed, lower energy consumption, fully transparent devices and flexible display, which also has a great impact on active drive display (such as AMLCD, Active Matrix The performance of TFT (thin film transistor) devices in Liquid Crystal Display puts forward higher requirements. Conventional amorphous silicon TFT due to its low mobility (~ 0.5cm 2 V -1 the s -1 ) characteristics cannot meet the display requirements of high-resolution, large-size LCD, and limit its application in AMOLED (Active Matrix Organic Light Emitting Diode) display. Although the low-temperature polysilicon TFT has high mobility, its production cost is too high, and it is difficult to ensure large-area...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/08C04B35/00C04B35/01C04B35/453C04B35/6261C04B35/645C04B35/6455C04B2235/3206C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3227C04B2235/3232C04B2235/3244C04B2235/3256C04B2235/3284C04B2235/3286C04B2235/604C04B2235/6562C04B2235/6567C04B2235/658C04B2235/77C23C14/3414H01L29/24H01L29/78693H01J37/3429H01B1/08C23C14/086B28B3/00
Inventor 庄大明赵明曹明杰郭力张冷魏要伟
Owner TSINGHUA UNIV
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