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Low contact resistance type Gan-based device and manufacturing method thereof

A low contact resistance and device technology, applied in the field of microelectronics, can solve the problems of enhanced frequency characteristics of parasitic capacitor devices, poor gate support, etc., to improve frequency characteristics, reduce square resistance and contact resistance, and solve source and drain problems The effect of shrinking spacing

Active Publication Date: 2019-06-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] First, when the gate length of the device is less than 100nm, reducing the gate width will lead to poor support of the gate;
[0009] Second, as the gate-to-drain spacing decreases, the influence of parasitic capacitance on the frequency characteristics of the device will increase

Method used

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  • Low contact resistance type Gan-based device and manufacturing method thereof
  • Low contact resistance type Gan-based device and manufacturing method thereof
  • Low contact resistance type Gan-based device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1, a low contact resistance GaN-based device is manufactured on a sapphire substrate with a groove width of 0.2 μm, a groove etching depth of 25 nm, and a barrier layer composed of an AlGaN layer and a GaN cap layer.

[0032] In step 1, an AlN nucleation layer is grown on a sapphire substrate by MOCVD process.

[0033] Lower the temperature of the sapphire substrate to 500°C, keep the growth pressure at 40Torr, the flow rate of hydrogen gas at 1000sccm, the flow rate of ammonia gas at 600sccm, feed the aluminum source with a flow rate of 4sccm into the reaction chamber, and grow a low-temperature substrate with a thickness of 5nm on the sapphire substrate. AlN layer;

[0034] Then increase the growth temperature to 940°C, keep the growth pressure at 40 Torr, the flow rate of hydrogen gas at 1000 sccm, the flow rate of ammonia gas at 1000 sccm, feed the aluminum source with a flow rate of 4 sccm into the reaction chamber, and re-grow the thickness on the low-t...

Embodiment 2

[0099]Embodiment 2, a low contact resistance GaN-based device is fabricated on a SiC substrate with a groove width of 1 μm, a groove etching depth of 100 nm, and a barrier layer composed of an AlGaN layer and a GaN cap layer.

[0100] In step 1, an AlN nucleation layer is grown on the SiC substrate by using the MOCVD process.

[0101] Lower the temperature of the SiC substrate to 650°C, keep the growth pressure at 100 Torr, the flow rate of hydrogen gas at 5000 sccm, the flow rate of ammonia gas at 3000 sccm, feed the aluminum source with a flow rate of 20 sccm into the reaction chamber, and grow a low-temperature substrate with a thickness of 10 nm on the SiC substrate. AlN layer;

[0102] Then increase the growth temperature to 1050°C, keep the growth pressure at 100 Torr, the flow rate of hydrogen gas at 5000 sccm, the flow rate of ammonia gas at 3000 sccm, feed the aluminum source with a flow rate of 20 sccm into the reaction chamber, and re-grow the thickness of the low-t...

Embodiment 3

[0138] Embodiment 3, a low contact resistance GaN-based device is fabricated on a sapphire substrate with a groove width of 0.2 μm, a groove etching depth of 25 nm, and a barrier layer composed of an InAlN layer and a GaN cap layer.

[0139] In step A, an AlN nucleation layer is grown on the sapphire substrate by MOCVD process.

[0140] The specific implementation of this step is the same as step 1 in the first embodiment.

[0141] Step B, growing a GaN buffer layer on the AlN nucleation layer.

[0142] The specific implementation of this step is the same as step 2 in the first embodiment.

[0143] Step C, growing a second channel region on the buffer layer.

[0144] The specific implementation of this step is the same as step 3 in the first embodiment.

[0145] Step D, growing a back barrier layer on the second channel region.

[0146] The specific implementation of this step is the same as step 4 in the first embodiment.

[0147] Step E, growing a first channel region o...

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Abstract

The invention discloses a low-contact resistor type GaN-based device and a manufacturing method thereof, which mainly solve the problem that a source-drain contact resistance and a grid leak stray capacitance of an existing device are excessive. The device comprises a substrate layer (1), a nucleating layer (2), a buffer layer (3), a second channel region (4), a back barrier layer (5), a first channel region (6), an insertion layer (7), an AlGaN / InAlN barrier layer (8), and a GaN cap layer (9) from bottom to top, wherein a source electrode (10), a leakage electrode (11) and a groove with the etching depth deepened to the back barrier layer are arranged on / in the GaN cap layer; passivation layers (12) are arranged on an inner wall of the groove and a region of the GaN cap layer except for the leakage and source electrodes; a gate electrode (13) is arranged on the passivation layer in the groove. According to the low-contact resistor type GaN-based device provided by the invention, the ohmic contact resistance is reduced, the grid leak gap is increased, the grid leak feedback capacitance is reduced, the working frequency of the device is improved, and the low-contact resistor type GaN-based device can be applied in a communication, satellite navigation and radar system and a base station system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a low contact resistance GaN base device, which can be used in communication, satellite navigation, radar system and base station system. Background technique [0002] With the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices, while electronic devices based on nitride semiconductor materials can meet this requirement, greatly improving The improvement of device performance has made the third-generation semiconductor materials represented by GaN widely used in the manufacture of microwave and millimeter wave devices. GaN is a new type of wide bandgap compound semiconductor material, which has excellent characteristics that many silicon-based semiconductor materials do not have, such as wide bandgap width, high breakdown electric ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/45H01L21/28H01L21/336
CPCH01L21/28H01L29/452H01L29/66075
Inventor 杨凌康慨周小伟马晓华郝跃
Owner XIDIAN UNIV