Graphene/gallium arsenide solar battery

A solar cell and gallium arsenide technology, applied in the field of solar energy, can solve the problems of improving photoelectric conversion efficiency of gallium arsenide solar cells, increasing photogenerated carrier recombination centers, large series resistance and recombination current, etc., to reduce shading loss, The effect of promoting lateral transport and increasing fill factor

Inactive Publication Date: 2017-02-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

In the traditional GaAs solar cell manufacturing process, although the heavily doped GaAs cap layer can form a good ohmic contact with the positive electrode, it increases the recombination center of photogenerated carriers, resulting in a large series resistance and In addition, the dense front electrode grid lines will cause a large shading loss, which further restricts the improvement of the photoelectric conversion efficiency of gallium arsenide solar cells

Method used

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  • Graphene/gallium arsenide solar battery
  • Graphene/gallium arsenide solar battery

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preparation example Construction

[0050] The method for preparing the solar cell in the present invention is not particularly limited, and may be a method for preparing a solar cell well known to those skilled in the art, preferably including the following steps:

[0051] 1) transfer the graphene to the surface of the window layer on the surface of the gallium arsenide epitaxial wafer to form a graphene layer;

[0052] 2) Prepare a heavily doped gallium arsenide cap layer on the surface of the graphene layer;

[0053] 3) Prepare the back electrode on the surface of the gallium arsenide epitaxial wafer substrate, and prepare the front electrode on the surface of the heavily doped gallium arsenide cap layer;

[0054] 4) Corroding the heavily doped gallium arsenide cap layer between the front electrode grid lines by chemical etching to expose the graphene layer, and preparing an anti-reflection layer on the surface of the exposed graphene layer.

[0055] Preferably in the present invention, a cleaning step is al...

Embodiment 1

[0063] 1) Place the single-junction GaAs cell epitaxial wafer with the structure of GaAs / GaAs in acetone, isopropanol, and absolute ethanol, respectively, and heat it in a 60°C water bath for 15 minutes, then rinse it with deionized water for 10 minutes, and then place it in in HCl:H 2 Soak in the solution of O=1:10 at room temperature for 1min, finally wash with deionized water and blow dry with nitrogen;

[0064] 2) transfer the monolayer graphene to the window layer on the surface of the epitaxial wafer by electrochemical method;

[0065] 3) Depositing a heavily doped gallium arsenide cap layer on the graphene layer by MOCVD;

[0066] 4) Prepare the positive electrode pattern on the surface of the heavily doped gallium arsenide cap layer by photolithography technology, and prepare the alloy back electrode and positive electrode of nickel, germanium and gold by electron beam evaporation method, remove the photoresist and alloy, and then The epitaxial wafer placed in NH 3 ...

Embodiment 2

[0075] 1) Place a single-junction GaAs cell epitaxial wafer with a structure of GaAs / Ge in acetone, isopropanol, and absolute ethanol at 50°C for 20 minutes, rinse with deionized water for 10 minutes, and then place in H 2 SO 4 :H 2 o 2 :H 2 Soak in the solution of O=1:8:500 at room temperature for 3min, finally wash with deionized water and blow dry with nitrogen;

[0076] 2) transfer three layers of graphene to the window layer on the surface of the epitaxial wafer by electrochemical method;

[0077] 3) Depositing a heavily doped gallium arsenide cap layer on the graphene layer by MOCVD;

[0078] 4) Prepare the positive electrode pattern on the surface of the heavily doped gallium arsenide cap layer by photolithography technology, and prepare the alloy back electrode and positive electrode of nickel, germanium, silver and gold by electron beam evaporation method, remove the photoresist and alloy, Then place the epitaxial wafer in C 6 h 8 o 7 :H 2 o 2 :H 2 Erosion ...

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Abstract

The invention provides a graphene / gallium arsenide solar battery, sequentially comprising a back electrode, a gallium arsenide epitaxial slice, a window layer, a graphene layer, a heavily-doped gallium arsenide cap layer, and a front electrode; the heavily-doped gallium arsenide cap layer has a hollowed-out area which corresponds to an area outside grating lines of the front electrode; the graphene / gallium arsenide solar battery also comprises an antireflection layer filling the hollowed-out area of the heavily-doped gallium arsenide cap layer and contacting the graphene layer. The graphene layer is used as a transparent conductive layer, single layer or multiple layers of graphene are transferred between a window layer and heavily-doped gallium arsenide cap layer of a traditional single-junction or multi-junction gallium arsenide solar battery by means of graphene transfer process, transverse transport of photon-generated carriers can be promoted, photo-generated carrying combined center is decreased, serial resistance is decreased, filling factor is increased, and it is also possible to effectively reduce the grating line density and width of the front electrode, decrease shading loss and increase short-circuit current and open-circuit voltage.

Description

technical field [0001] The invention relates to the technical field of solar energy, in particular to a graphene / gallium arsenide solar cell. Background technique [0002] In recent years, global environmental and energy problems have become increasingly severe, and solar cells, as a renewable green new energy, play a vital role in the sustainable development of human beings. Solar cells are devices that convert light energy into electrical energy by using the photovoltaic effect, and can be mainly divided into silicon-based solar cells and compound semiconductors (such as GaAs, CdTe, CuInSe 2 etc.) two types of solar cells, among which the semiconductor solar cells represented by GaAs-based III-V compounds are widely used in the aerospace field because of their high conversion efficiency, high reliability, long life, small and light weight, etc. favored. [0003] On the one hand, since the discovery of graphene in 2004 by Geim, a professor of physics at the University of ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0352
CPCH01L31/02168H01L31/0352Y02E10/50
Inventor 贾锐桂羊羊孙恒超陶科戴小宛金智刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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