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Preparation method of organic superlattice anatase type titanizing tungsten oxide film infrared light-sensitive material

A superlattice and anatase technology, applied in the field of materials, can solve the problems of high roughness, large defects, low flatness and uniformity of titanium and tungsten oxide thin film materials, and achieve excellent flatness and reduce defects , the effect of simple preparation method

Active Publication Date: 2017-03-01
SHAOXING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing an organic superlattice anatase titanized tungsten oxide film infrared photosensitive material. Large defects, high roughness, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for preparing an organic superlattice anatase titanized tungsten oxide thin film infrared photosensitive material, the steps of which are as follows:

[0028] Step 1, put ammonium tungstate and tungsten chloride into the alkaline solution, add nano-foaming agent to form a tungsten coating solution;

[0029] Step 2, put n-butyl titanate, stabilizer, solvent, acidifying agent and penetrating agent into the stirred tank, and stir evenly to obtain the titanium dioxide coating solution;

[0030] Step 3, using the inorganic modifier and the organometallic modifier as materials, soaking in an aqueous ethanol solution to obtain a modified solution;

[0031] Step 4, soaking the base material in the tungsten coating solution, stirring evenly, drying in an oven to obtain a tungsten film;

[0032] Step 5, immersing the tungsten film in the titanium dioxide coating solution, and then rapidly cooling to form a nano-titanium dioxide precursor film;

[0033] The soaking time...

Embodiment 2

[0039] A method for preparing an organic superlattice anatase titanized tungsten oxide thin film infrared photosensitive material, the steps of which are as follows:

[0040] Step 1, put ammonium tungstate and tungsten chloride into the alkaline solution, add nano-foaming agent to form a tungsten coating solution;

[0041] Step 2, put n-butyl titanate, stabilizer, solvent, acidifying agent and penetrating agent into the stirred tank, and stir evenly to obtain the titanium dioxide coating solution;

[0042] Step 3, using the inorganic modifier and the organometallic modifier as materials, soaking in an aqueous ethanol solution to obtain a modified solution;

[0043] Step 4, soaking the base material in the tungsten coating solution, stirring evenly, drying in an oven to obtain a tungsten film;

[0044] Step 5, immersing the tungsten film in the titanium dioxide coating solution, and then rapidly cooling to form a nano-titanium dioxide precursor film;

[0045] Step 6, sinterin...

Embodiment 3

[0057] A method for preparing an organic superlattice anatase titanized tungsten oxide thin film infrared photosensitive material, the steps of which are as follows:

[0058]Step 1, put ammonium tungstate and tungsten chloride into the alkaline solution, add nano-foaming agent to form a tungsten coating solution;

[0059] Step 2, put n-butyl titanate, stabilizer, solvent, acidifying agent and penetrating agent into the stirred tank, and stir evenly to obtain the titanium dioxide coating solution;

[0060] Step 3, using the inorganic modifier and the organometallic modifier as materials, soaking in an aqueous ethanol solution to obtain a modified solution;

[0061] Step 4, soaking the base material in the tungsten coating solution, stirring evenly, drying in an oven to obtain a tungsten film;

[0062] Step 5, immersing the tungsten film in the titanium dioxide coating solution, and then rapidly cooling to form a nano-titanium dioxide precursor film;

[0063] Step 6, sintering...

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PUM

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Abstract

The invention discloses a preparation method of an organic superlattice anatase type titanizing tungsten oxide film infrared light-sensitive material. The preparation method comprises the steps of 1, preparing a tungsten film coating solution; 2, acquiring a titanium dioxide film coating solution; 3, preparing a modified solution; 4, soaking a substrate material into the tungsten film coating solution, stirring evenly, and drying in a drying oven so as to acquire a tungsten film; 5, soaking the tungsten film into the titanium dioxide film coating solution, and then cooling quickly to form a nanometer titanium dioxide precursor film; 6, performing high-temperature sintering on the film substrate material acquired in the step 5 so as to form a nanometer titanium dioxide-tungsten oxide film; 7, soaking the film acquired in the step 6 into a an ethanol solution in the step 3, performing slight-boiling cooking repeatedly, bailing, and curing quickly; and 8, performing annealing processing on the film material acquired in the step 7 to acquire a product. The preparation method is simple, and solves problems of low flatness and uniformity, great defect, high roughness and the like of titanizing and tungsten oxide film materials.

Description

technical field [0001] The invention belongs to the field of material technology, and in particular relates to a preparation method of an organic superlattice anatase titanium oxide tungsten thin film infrared photosensitive material. Background technique [0002] In the field of optoelectronic applications, 3D flower-like nanostructure materials have obvious advantages over 1D nanowires and 2D nanosheets. transport of fluids. For more than 20 years, people have successfully prepared many semiconductor flower-like nanocrystals through nanotechnology, such as iron oxide nano-snow, zinc oxide nano-lilac, lead sulfide nano-albizia, titanium oxide nano-camellia, copper oxide nano-peony, sulfide Copper nanoroses, nickel sulfide nanoflowers, cobalt sulfide nanoflowers, etc. However, in the application of nano-optoelectronic devices, three-dimensional flower-like nanostructure materials still face the problem of high recombination probability of photogenerated electrons and holes...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y30/00
CPCB82Y30/00H01L21/02565H01L21/02628H01L21/02664
Inventor 刘士彦张依姚博
Owner SHAOXING UNIVERSITY