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ZnO thin film laser ablation fabrication method

A technology of laser ablation and manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of difficulty and difficult preparation of ceramic targets, and achieve the effect of simplifying the manufacturing method and relaxing the process conditions.

Inactive Publication Date: 2017-03-29
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, the preparation of the ceramic target is quite difficult, and the preparation process is carried out under the harsh conditions of high vacuum, which makes the method very difficult to implement.

Method used

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  • ZnO thin film laser ablation fabrication method
  • ZnO thin film laser ablation fabrication method
  • ZnO thin film laser ablation fabrication method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0013] 3. Preparation of gel film

[0014] The substrate is adsorbed on the spin-coating table of the spin-coating machine, and the assembly center of the substrate is located on the axis of the spin-coating table; the sol solution is dripped onto the substrate with a glue head dropper; The table rotates at a speed of 500 rpm for 10 sec, and then rotates at a speed of 3000 rpm for 30 sec to form a layer of wet gel film on the substrate to obtain a wet film substrate; heat the wet film substrate at 50°C for 5 to 10 minutes , and then dried at 180° C. and 150° C. for 5 to 10 minutes successively in a constant temperature drying oven to fully volatilize the solvent in the wet gel film to obtain a gel film.

[0015] To thicken the gel film, repeat this step several times. However, as the number of repetitions increases, so do the defects in the gel film.

[0016] 4. Fabrication of ZnO thin film

[0017] The gel film is ablated by laser, the laser power is 5-30W, the ablation ti...

example 1

[0019] Example 1: select a quartz glass sheet as the substrate; clean the substrate in an ultrasonic cleaner for 10 minutes with a degreasing agent; then clean the substrate in an ultrasonic cleaner with hydrochloric acid for 10 minutes; then use absolute ethanol in an ultrasonic cleaner Clean the substrate in medium for 10 min; finally use deionized water to clean the substrate repeatedly in an ultrasonic cleaner; dry the substrate in a drying oven. The sol solution was prepared with A.R. pure zinc acetate and ethanol as raw materials. Dissolve zinc acetate in 15ml of ethanol to prepare Zn 2+ Concentration of 0.8mol / L solution, then add Zn 2+ Ethanolamine was used as a complexing agent in an equal amount, and after stirring at 60° C. for 1.5 h, a transparent homogeneous sol was obtained. The substrate is adsorbed on the spin-coating table of the spin-coating machine, and the assembly center of the substrate is located on the axis of the spin-coating table; the sol solution ...

example 2

[0020] Example 2: select a quartz glass sheet as the substrate; clean the substrate in an ultrasonic cleaner for 10 minutes with degreasing agent; then clean the substrate in an ultrasonic cleaner with hydrochloric acid for 10 minutes; then use absolute ethanol in an ultrasonic cleaner Clean the substrate in medium for 10 min; finally use deionized water to clean the substrate repeatedly in an ultrasonic cleaner; dry the substrate in a drying oven. The sol solution was prepared with A.R. pure zinc acetate and ethylene glycol methyl ether as raw materials. Dissolve zinc acetate in 20ml of ethylene glycol methyl ether to prepare Zn 2+ Concentration of 1.0mol / L solution, then add Zn 2+ The same amount of ethanolamine was used as a complexing agent, and after stirring for 2 hours at a temperature of 50° C., a transparent homogeneous sol was obtained. The substrate is adsorbed on the spin-coating table of the spin-coating machine, and the assembly center of the substrate is locat...

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Abstract

The invention relates to a ZnO thin film laser ablation fabrication method and belongs to the optical functional material technical field. An existing method for fabricating a ZnO thin film is very difficult to implement. The ZnO thin film laser ablation fabrication method of the invention is a sol-gel method. The ZnO thin film laser ablation fabrication method includes the following steps that: zinc acetate is dissolved in an organic solvent, ethanolamine of which the molar quantity is equal to that of zinc ions is added into an obtained solution, and the solution is stirred, and a sol liquid is obtained; a substrate is spin-coated with the sol liquid, and the substrate spin-coated with the sol liquid is subjected to lower-temperature heat treatment, so that a sol film can be obtained; and laser is adopted to ablate the sol film, the power of the laser ranges from 5 to 30 W, ablation time ranges from 1 to 1000 sec, a distance from a laser light source to the sol film ranges from 1 to 50 cm, and a ZnO thin film is obtained. According to the method of the invention, a vacuum environment and a special protective atmosphere are not required, and a ZnO ceramic target is not required to be produced, and therefore, compared with an existing pulsed laser deposition method, the method of the invention has lower requirements for process conditions and is greatly simplified in thin film fabrication.

Description

technical field [0001] The invention relates to a ZnO thin film laser ablation manufacturing method, which belongs to the technical field of optical functional materials. Background technique [0002] ZnO is a kind of Ⅱ-Ⅵ group direct wide-bandgap semiconductor material with excellent photoelectric properties. At room temperature, the bandgap width is 3.37eV, the bound excitons can be as high as 60meV, and it has a transmittance as high as 90% in the 400-800nm ​​band. And it has a strong absorption of ultraviolet light, which is very suitable for short-wavelength light-emitting devices. Room temperature ZnO thin film photoluminescence spectrum (PL spectrum) includes 380nm intrinsic ultraviolet peak and 520nm yellow-green light band broadening peak, they recombine with conduction band and valence band transition, exciton recombination luminescence and energy band and defect energy level or The transition luminescence between each defect energy level is closely related. Util...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCH01L21/304
Inventor 刘全生孙海鹰米晓云王能利柏朝晖张希艳卢利平王晓春
Owner CHANGCHUN UNIV OF SCI & TECH
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