Laser ablation manufacturing method for metastable-state AlZnO solid solution alloy film

A solid solution alloy and laser ablation technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of difficult film formation, poor electrical conductivity, difficult ignition and discharge, etc., and achieve simplified production methods, The effect of relaxed process conditions

Inactive Publication Date: 2017-05-31
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, the preparation of the ceramic target itself is quite difficult, and the preparation process is carried out under the harsh conditions of high vacuum, and at the same time due to the 2 o 3 The reason for poor conductivity is that it is difficult to initiate discharge and film formation

Method used

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  • Laser ablation manufacturing method for metastable-state AlZnO solid solution alloy film
  • Laser ablation manufacturing method for metastable-state AlZnO solid solution alloy film
  • Laser ablation manufacturing method for metastable-state AlZnO solid solution alloy film

Examples

Experimental program
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preparation example Construction

[0013] 3. Preparation of gel film

[0014] The substrate is adsorbed on the spin-coating table of the spin-coating machine, and the assembly center of the substrate is located on the axis of the spin-coating table; the sol solution is dripped onto the substrate with a glue head dropper; The table rotates at a speed of 500 rpm for 10 sec, and then rotates at a speed of 3000 rpm for 30 sec to form a layer of wet gel film on the substrate to obtain a wet film substrate; heat the wet film substrate at 50°C for 5 to 10 minutes , and then dried at 180° C. and 150° C. for 5 to 10 minutes successively in a constant temperature drying oven to fully volatilize the solvent in the wet gel film to obtain a gel film.

[0015] To thicken the gel film, repeat this step several times. However, as the number of repetitions increases, so do the defects in the gel film.

[0016] 4. Fabrication of metastable AlZnO solid solution alloy thin films

[0017] The gel film is ablated by laser, the la...

example 1

[0019] Example 1: select a quartz glass sheet as the substrate; clean the substrate in an ultrasonic cleaner for 10 minutes with a degreasing agent; then clean the substrate in an ultrasonic cleaner with hydrochloric acid for 10 minutes; then use absolute ethanol in an ultrasonic cleaner Clean the substrate in medium for 10 min; finally use deionized water to clean the substrate repeatedly in an ultrasonic cleaner; dry the substrate in a drying oven. The sol solution was prepared with A.R. pure zinc acetate, aluminum acetate and ethanol as raw materials. OK Al x Zn 1-x The value of x in O is 0.75, and the molar ratio of zinc acetate to aluminum acetate is 1:4. Dissolve zinc acetate and aluminum acetate in 15ml of ethanol to prepare Al 2+ , Zn 2+ A solution with a total concentration of 0.8mol / L was added with Al 2+ and Zn 2+ Ethanolamine was used as a complexing agent in an equal amount, and after stirring at 60° C. for 1.5 h, a transparent homogeneous sol was obtained. ...

example 2

[0020] Example 2: select a quartz glass sheet as the substrate; clean the substrate in an ultrasonic cleaner for 10 minutes with degreasing agent; then clean the substrate in an ultrasonic cleaner with hydrochloric acid for 10 minutes; then use absolute ethanol in an ultrasonic cleaner Clean the substrate in medium for 10 min; finally use deionized water to clean the substrate repeatedly in an ultrasonic cleaner; dry the substrate in a drying oven. The sol solution was prepared with A.R. pure zinc acetate, aluminum acetate and ethylene glycol methyl ether as raw materials. OK Al x Zn 1-x The value of x in O is 0.5, and the molar ratio of zinc acetate to aluminum acetate is 1:1. Dissolve zinc acetate and aluminum acetate in 20ml of ethylene glycol methyl ether to prepare Al 2+ , Zn 2+ A solution with a total concentration of 1.0mol / L, then added with Al 2+ and Zn 2+ The same amount of ethanolamine was used as a complexing agent, and after stirring for 2 hours at a temperat...

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Abstract

The invention discloses a laser ablation manufacturing method for a metastable-state AlZnO solid solution alloy film, and belongs to the technical field of optical function materials. An existing method for manufacturing an AlZnO solid solution alloy film is extremely tedious. The laser ablation manufacturing method for the metastable-state AlZnO solid solution alloy film disclosed by the invention belongs to a Sol-Gel method, and is characterized by comprising the following steps: determining the value of x in AlxZn1-xO to be greater than 0 and smaller than 1, determining the molar ratio of zinc acetate to aluminum acetate according to the value of x, dissolving zinc acetate and aluminum acetate into an organic solvent, adding ethanol amine with the mass being equal to that of zinc ions and aluminum ions, and stirring to obtain a sol rubber solution; spin-coating the sol rubber solution onto a substrate, and carrying out low-temperature treatment to obtain a gel film; carrying out laser ablation on the gel film to obtain the metastable-state AlZnO solid solution alloy film, wherein the laser power is 5 to 30 W, the ablation time is 1 to 1000 sec, and the distance between a laser light source light outlet and the gel film is 1 to 50 cm.

Description

technical field [0001] The invention relates to a laser ablation manufacturing method of a metastable AlZnO solid solution alloy thin film, belonging to the technical field of optical functional materials. Background technique [0002] ZnO is a kind of Ⅱ-Ⅵ group direct wide-bandgap semiconductor material with excellent photoelectric properties. At room temperature, the bandgap width is 3.37eV, the bound excitons can be as high as 60meV, and it has a transmittance as high as 90% in the 400-800nm ​​band. And it has a strong absorption of ultraviolet light, which is very suitable for short-wavelength light-emitting devices. Room temperature ZnO thin film photoluminescence spectrum (PL spectrum) includes 380nm intrinsic ultraviolet peak and 520nm yellow-green light band broadening peak, they recombine with conduction band and valence band transition, exciton recombination luminescence and energy band and defect energy level or The transition luminescence between each defect ene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02675
Inventor 刘全生王晓春王能利米晓云张希艳卢利平柏朝晖孙海鹰
Owner CHANGCHUN UNIV OF SCI & TECH
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