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A kind of mos2/ag/mos2 semiconductor film material and preparation method thereof

A thin-film material and semiconductor technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve product performance consistency, poor stability, material structure and performance instability, and product quality control difficulties Large and other problems, to achieve the effect of strong performance repeatability, stable structure, and improved uniformity and continuity

Active Publication Date: 2019-06-25
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above structural characteristics of molybdenum disulfide lead to its very large resistivity and poor carrier transport performance, which seriously hinders its application in the field of semiconductors and devices.
Due to differences in atomic radius, gain and loss of electrons, etc., this doping technology will inevitably form a large number of defects in molybdenum disulfide, resulting in instability of the material structure and performance of the product
[0009] In other words, the technical means of doping is used to carry out MoS 2 The modification of film materials, the consistency and stability of the product performance are relatively poor, and the control of product quality is difficult
[0010] More importantly, for the field of semiconductor device technology, this type of doped modified MoS 2 For thin film materials, the resistivity is still high and the conductivity is not ideal

Method used

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  • A kind of mos2/ag/mos2 semiconductor film material and preparation method thereof
  • A kind of mos2/ag/mos2 semiconductor film material and preparation method thereof
  • A kind of mos2/ag/mos2 semiconductor film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] The preparation method is as follows:

[0067] The first step, silicon substrate surface cleaning step

[0068] Select an intrinsically insulating and non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s;

[0069] Remove and blow dry with dry nitrogen;

[0070] The second step, the underlying MoS 2 Thin film layer surface deposition step

[0071] Put the cleaned Si single crystal substrate into a tray, put it into a vacuum chamber, and evacuate the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere , the argon gas pressure was adjusted to the first pressure of 3Pa, using DC magnetron sputtering technology, under the condition of constant 30W sputtering power, the ionized ions were used to bombard MoS 2 A ceramic target, on the upper surface of the Si substrate, deposit a layer of MoS with a thickness...

Embodiment 2

[0082] Description: This example is a comparative example, and the target product is pure MoS 2 Thin film material, no intermediate Ag intercalation.

[0083] The preparation method is as follows:

[0084] The first step, silicon substrate surface cleaning step

[0085] Select an intrinsically insulating and non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s;

[0086] Remove and blow dry with dry nitrogen;

[0087] The second step, the underlying MoS 2 Thin film layer surface deposition step

[0088] Put the cleaned Si single crystal substrate into a tray, put it into a vacuum chamber, and evacuate the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere , the argon gas pressure was adjusted to the first pressure of 3Pa, using DC magnetron sputtering technology, under the condition of constant 30W sputteri...

Embodiment 3

[0092] Only in the third step, the thickness of the Ag intercalation layer was adjusted to 3nm by adjusting the sputtering time;

[0093] Product performance test results:

[0094] It has been tested that at room temperature (20-25°C), the prepared MoS 2 / Ag / MoS 2 The electron carrier concentration, electron mobility and resistivity values ​​of the thin film material are 1.8×10 20 cm -3 、1.2cm 2 V -1 the s -1 and 9.8Ωcm.

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Abstract

The invention discloses a MoS 2 / Ag / MoS 2 Semiconductor thin film material and its preparation method, the thin film has a layered structure, including the top layer of MoS from top to bottom 2 Thin film layer, Ag metal layer, underlying MoS 2 thin film layer and intrinsically insulating Si substrate. Its preparation method mainly adopts DC magnetron sputtering technology, and uses high-energy electrons to bombard the surface of different targets in sequence: first, use MoS 2 target, deposit a bottom layer of MoS on the surface of Si substrate 2 thin film layer; then using metallic Ag targets, on the underlying MoS 2 A layer of Ag metal is deposited on the thin film layer; finally MoS is used 2 target, depositing a top layer of MoS on the Ag metal layer 2 film layer. Compared to pure MoS 2 Thin film product, MoS of the present invention 2 / Ag / MoS 2 The resistivity of the semiconductor thin film is reduced by more than 4 orders of magnitude. The invention has simple process, convenient parameter control, high yield, good product quality stability and reliability, low manufacturing cost and is suitable for industrialized production.

Description

technical field [0001] The invention relates to a semiconductor material and a preparation method thereof, in particular to a MoS 2 / Ag / MoS 2 Semiconductor thin film material and its preparation method. Background technique [0002] Molybdenum disulfide itself is not conductive, but has diamagnetism, and can be used as a linear photoconductor and a semiconductor showing P-type or N-type conductivity, and has the functions of rectification and energy conversion. [0003] Because the molybdenum disulfide thin film material has a typical layered structure, the layers are tightly bound together by covalent bonds, and each Mo atom is surrounded by six S atoms, which is in the shape of a triangular prism; the layers are weaker. Van der Waals forces combine to slide off easily. [0004] The above structural characteristics of molybdenum disulfide lead to its very high resistivity and poor carrier transport performance, which seriously hinders its application in the field of semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/18C23C14/35
CPCC23C14/0623C23C14/185C23C14/352
Inventor 郝兰众刘云杰韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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