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Method for growing large-area mono-crystal vanadium dioxide thin film by utilizing tubular furnace

A vanadium dioxide and tube furnace technology, which is applied in the field of oxide semiconductor material growth, can solve the problems of large growth film area and the influence of electrical and optical properties, and achieve the effects of good uniformity, improved photoelectric performance, and low cost

Active Publication Date: 2017-05-10
EAST CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These preparation methods are relatively mature, and the area of ​​the film can be grown large, and the thickness of the film is controllable, but these films are all polycrystalline films, and the resistivity change can only reach 2 to 3 orders of magnitude when the phase changes. performance in terms of

Method used

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  • Method for growing large-area mono-crystal vanadium dioxide thin film by utilizing tubular furnace
  • Method for growing large-area mono-crystal vanadium dioxide thin film by utilizing tubular furnace
  • Method for growing large-area mono-crystal vanadium dioxide thin film by utilizing tubular furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 As shown, the growth of the vanadium dioxide film is completed in a strictly enclosed quartz tube 3. At both ends of the quartz tube 3 are the air inlet 1 and the air outlet 5; the temperature rise and fall rate of the experiment are controlled by the tube furnace control system 6. Setting: In order to prepare a high-quality single-crystal vanadium dioxide thin film, before the tube furnace starts to heat up, the quartz tube 3 is filled with argon for 1 to 2 times, and then it is evacuated to a vacuum state.

[0034] A method of using a tube furnace to grow a large-area single crystal vanadium dioxide thin film, which includes the following steps:

[0035] The size of the selected substrate is 10×10mm 2 SiO 2 / Si experimental substrate 8, this experimental substrate 8 is based on silicon as a substrate and a layer of 500~1000nm SiO is grown on its surface 2 Thin film; first check the SiO used 2 / Si experimental substrate 8 is cleaned, put the experimental su...

Embodiment 2

[0041] Use 200nm Si 3 N 4 / Si is used as the experimental substrate 8. The film preparation process is as described in Example 1. Vacuum to 50~80mTorr, then pass in argon gas at a flow rate of 15SCCM, and raise the temperature of the outer temperature zone and the inner temperature zone from room temperature respectively To 900°C and 800°C, the heating time is 40 minutes. The experimental temperature used by different materials is slightly different, generally ranging from 40 to 80 ℃. By observing the change of the air pressure in the quartz tube 3 during the heating process, adjust the air pressure valve of the air outlet 5 in time to control the air pressure in the quartz tube 3 within the range of 300-500mTorr. After reaching the temperature, the temperature will be maintained for 200 minutes. Then, the cooling time is controlled for 360 minutes. When the temperature is lower than 30°C, the quartz tube 3 is opened, and the experimental substrate 8 is taken out.

[0042] Such ...

Embodiment 3

[0044] Silicon is selected as the experimental substrate 8. The film preparation process is as described in Example 1. Vacuum to 50~80mTorr, and then argon gas with a flow rate of 20SCCM, and the temperature of the outer temperature zone and the inner temperature zone are respectively increased from room temperature To 950°C and 850°C, the heating time is 70 minutes. The experimental temperature used by different materials is slightly different, and the general range is between 40-100°C. By observing the change of the air pressure in the quartz tube 3 during the heating process, adjust the air pressure valve of the air outlet 5 in time to control the air pressure in the quartz tube 3 within the range of 200-400mTorr. After reaching the temperature, the temperature will be maintained for 100 minutes. Then, the cooling time is controlled for 500 minutes. When the temperature is lower than 30°C, the quartz tube 3 is opened, and the experimental substrate 8 is taken out.

[0045] Su...

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Abstract

The invention discloses a method for growing a large-area mono-crystal vanadium dioxide thin film by utilizing a tubular furnace. The thin film grows on an experiment substrate with a certain thickness of SiO2 / Si, Si3N4 / Si, silicon, quartz, sapphires and the like by adopting a gas-solid manner. A growth surface of the experiment substrate is subjected to strict polishing treatment, and a reaction source vanadium pentaoxide powder is uniformly put at the bottom of a quartz boat; the experiment substrate is put into the quartz boat and the growth surface of the substrate is put downward. The large-area mono-crystal vanadium dioxide thin film is prepared through controlling a temperature rising speed, temperature, air pressure, gas flow size and reaction time in a vacuum environment of the tubular furnace. Compared with a common vanadium dioxide thin film, the large-area mono-crystal vanadium dioxide thin film prepared by the method has more excellent performances, the process is simple and the film forming quality is high; after the prepared mono-crystal vanadium dioxide thin film is subjected to insulator-metal phase change, the changing amplitude of the electrical conductivity reaches 4 to 5 orders of magnitude; the mono-crystal vanadium dioxide thin film is a mono-crystal material thin film and has wide application prospects in photo-electric, infrared and gas sensing aspects and the like.

Description

Technical field [0001] The invention relates to an oxide semiconductor material growth method, in particular to a method for growing a large-area single crystal vanadium dioxide film by using a tube furnace. Background technique [0002] Vanadium dioxide is a transition metal oxide with unique properties. The thermally induced phase transition from the insulator to the metallic state occurs at around 340K. This phase change of vanadium dioxide can be achieved not only by heating, but also by other means such as light and electric field. The vanadium dioxide film with thermally induced phase change characteristics has potential application value in laser protection, ultra-fast switching and infrared thermal imaging, so vanadium dioxide film is vividly called "smart film". [0003] The general preparation methods of vanadium dioxide thin film materials mainly include vacuum evaporation, sputtering, chemical vapor deposition, physical vapor deposition and pulsed laser deposition. Pu...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B1/00
CPCC30B1/00C30B29/16
Inventor 卜毅邹继军朱志甫邓文娟刘云
Owner EAST CHINA UNIV OF TECH
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