Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for growing large-area single-crystal vanadium dioxide films using a tube furnace

A vanadium dioxide, tube furnace technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of large growth film area, influence on electrical and optical properties, etc., achieve good uniformity, improve Photoelectric performance, low cost effect

Active Publication Date: 2019-05-21
EAST CHINA UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These preparation methods are relatively mature, and the area of ​​the film can be grown large, and the thickness of the film is controllable, but these films are all polycrystalline films, and the resistivity change can only reach 2 to 3 orders of magnitude when the phase changes. performance in terms of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for growing large-area single-crystal vanadium dioxide films using a tube furnace
  • A method for growing large-area single-crystal vanadium dioxide films using a tube furnace
  • A method for growing large-area single-crystal vanadium dioxide films using a tube furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, the growth of the vanadium dioxide film is completed in a strictly closed quartz tube 3, and the two ends of the quartz tube 3 are respectively an air inlet 1 and an air outlet 5; the heating and cooling rates of the experiment are determined by the tube furnace control system 6 Setting; in order to prepare a high-quality single crystal vanadium dioxide film, before the tube furnace starts heating, the quartz tube 3 is filled with argon gas 1 to 2 times, and then it is evacuated to a vacuum state.

[0033] A method for growing a large-area single-crystal vanadium dioxide film by using a tube furnace, comprising the following steps: selecting a substrate with a size of 10×10mm 2 SiO 2 / Si experimental substrate 8, this experimental substrate 8 uses silicon as the substrate to grow a layer of 500-1000nm SiO on its surface 2 Thin films; 2 / Si experimental substrate 8 is cleaned, the experimental substrate 8 is put into the cleaning flower bask...

Embodiment 2

[0039] Choose 200nm Si 3 N 4 / Si as the experimental substrate 8, the film preparation process is as described in Example 1; vacuumize to 50-80mTorr, then pass into argon, the flow rate is 15SCCM, the temperature of the outer temperature zone and the inner temperature zone are raised from room temperature respectively To 900°C and 800°C, the heating time is 40 minutes. The experimental temperature used for different materials is slightly different, and the general range is between 40 and 80 °C. By observing the change of the air pressure in the quartz tube 3 during the heating process, adjust the air pressure valve of the air outlet 5 in time so that the air pressure in the quartz tube 3 is controlled within the range of 300 to 500 mTorr. After reaching the temperature, maintain the temperature for 200 minutes. Then control the cooling time for 360 minutes, open the quartz tube 3 when the temperature is lower than 30° C., and take out the experimental substrate 8 .

[0040]...

Embodiment 3

[0042] Select silicon as the experimental substrate 8, and its thin film preparation process is as described in Example 1; vacuumize to 50-80mTorr, then pass into argon gas, the flow rate is 20SCCM, and the temperature of the outer temperature zone and the inner temperature zone are raised from room temperature respectively. To 950°C and 850°C, the heating time is 70 minutes. The experimental temperature used for different materials is slightly different, and the general range is between 40 and 100 °C. By observing the change of the air pressure in the quartz tube 3 during the heating process, adjust the air pressure valve of the air outlet 5 in time, so that the air pressure in the quartz tube 3 is controlled within the range of 200-400mTorr, and the temperature is maintained after reaching the temperature, and the holding time is 100 minutes. Then control the cooling time for 500 minutes, open the quartz tube 3 when the temperature is lower than 30° C., and take out the expe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for growing a large-area mono-crystal vanadium dioxide thin film by utilizing a tubular furnace. The thin film grows on an experiment substrate with a certain thickness of SiO2 / Si, Si3N4 / Si, silicon, quartz, sapphires and the like by adopting a gas-solid manner. A growth surface of the experiment substrate is subjected to strict polishing treatment, and a reaction source vanadium pentaoxide powder is uniformly put at the bottom of a quartz boat; the experiment substrate is put into the quartz boat and the growth surface of the substrate is put downward. The large-area mono-crystal vanadium dioxide thin film is prepared through controlling a temperature rising speed, temperature, air pressure, gas flow size and reaction time in a vacuum environment of the tubular furnace. Compared with a common vanadium dioxide thin film, the large-area mono-crystal vanadium dioxide thin film prepared by the method has more excellent performances, the process is simple and the film forming quality is high; after the prepared mono-crystal vanadium dioxide thin film is subjected to insulator-metal phase change, the changing amplitude of the electrical conductivity reaches 4 to 5 orders of magnitude; the mono-crystal vanadium dioxide thin film is a mono-crystal material thin film and has wide application prospects in photo-electric, infrared and gas sensing aspects and the like.

Description

technical field [0001] The invention relates to a method for growing an oxide semiconductor material, in particular to a method for growing a large-area single-crystal vanadium dioxide film by using a tube furnace. Background technique [0002] Vanadium dioxide is a transition metal oxide with unique properties, such as a thermally induced phase transition from an insulator to a metallic state at around 340K. This phase transition of vanadium dioxide can be achieved not only by heating, but also by other methods such as light irradiation and electric field. Vanadium dioxide thin films with thermally induced phase transitions have potential applications in laser protection, ultrafast switching and infrared thermal imaging, so vanadium dioxide thin films are vividly called "smart thin films". [0003] Generally, the preparation methods of vanadium dioxide thin film materials mainly include vacuum evaporation method, sputtering method, chemical vapor deposition method, physica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B1/00
CPCC30B1/00C30B29/16
Inventor 卜毅邹继军朱志甫邓文娟刘云
Owner EAST CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com