Mixed light interconnection system based on standard CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process

Abstract

The invention discloses a mixed light interconnection system based on a standard CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process. The system comprises a substrate, a silicon dioxide body is arranged on the upper surface of the substrate, a metal layer for reflecting light is arranged at the upper part in the silicon dioxide body, a gate oxide layer achieving an isolating effect and a polycrystalline silicon LED (Light Emitting Diode) for emitting light are sequentially arranged in the silicon dioxide body and on the upper surface of the substrate from bottom to top, and a monocrystalline silicon PD for receiving light reflected from the metal layer is arranged close to the upper surface in the substrate and located on one side of the gate oxide layer and the polycrystalline silicon LED. The system can convert input electrical signals into light signals by light emission of the polycrystalline silicon LED, then the light signals are reflected by the metal and converted into electrical signals by a monocrystalline silicon photoelectric detector, and the converted electrical signals are output. The system can effectively shorten the light transmission distance while realizing light transmission on chip without increasing the manufacturing cost of an integrated circuit, and reduces the electrical interference.

Description

technical field [0001] The present invention relates to a hybrid optical interconnection system. In particular, it relates to a hybrid optical interconnection system based on a standard CMOS process consisting of a monocrystalline silicon photodetector (PD) and a polycrystalline silicon light emitting diode (LED). Background technique [0002] With the rapid development of science and technology, the feature size of integrated circuits is becoming smaller and smaller, and the integration level of chips is also becoming higher and higher under the guidance of Moore's Law. Microelectronics products are developing in the direction of small and precise. . In the 21st century, the development of microelectronics has encountered the bottleneck of physical limits. Further scaling down through "Moore's Law" would not only dramatically increase manufacturing costs, but also lead to undesired physical effects. Another more pressing bottleneck is the delay and power consumption of e...

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Problems solved by technology

However, there is only a thin layer of gate oxide between the LED and the detector, and the influence of the isolation electrical effect and thermal effect is not good; secondly, the monocrystalline silicon LED in the lower layer can only be used as a light-emitting device, polysilicon can only be used as a receiving device and cannot realize two-way communication; Three Si-based LEDs emit infrared light with forward-biased carrier injection. Although reverse-biased breakdown emits visible light, the wavelength of light is also around 700nm. Due to the thin polysilicon layer, it has a negative impact on the long-wavelength light emitted by Si-based LEDs. The detection performance is weak, while the single crystal silicon deep junction is relatively good at detecting long-wavelength light

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