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A kind of preparation method of three-dimensional dendritic nano cuo

A three-dimensional dendritic, nano-technology, applied in copper oxide/copper hydroxide and other directions, can solve the problems of complex preparation process, high preparation conditions, high temperature and pressure, etc., to achieve simple preparation process, high sample purity, crystallization high degree of effect

Active Publication Date: 2017-10-27
盐城市明亮机械有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The atomic layer deposition method is mostly used to prepare nano-CuO thin films on FTO glass substrates. Although this method can control the thickness of the thin films well, its deposition rate is low, and it requires high preparation conditions, and the preparation process is lengthy, resulting in preparation costs. high
At present, most of the methods for preparing three-dimensional nano-CuO are high-temperature hydrothermal methods, but the preparation process is complex, requires high temperature and pressure, and has poor safety performance. At the same time, it has high requirements for equipment and consumes a lot of energy.

Method used

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  • A kind of preparation method of three-dimensional dendritic nano cuo
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  • A kind of preparation method of three-dimensional dendritic nano cuo

Examples

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Embodiment 1

[0025] A preparation method of three-dimensional branched nano CuO, comprising the following steps:

[0026] (1) Cu thin films were prepared by electrochemical deposition on the cleaned FTO glass surface, wherein the copper deposition solution was 0.05 mol / L CuSO 4 and 1 mol / L Na 2 SO 4 mixed solution, and with H 2 SO 4 Adjust the pH value of the solution to 1; the deposition method is the I-t technique of the three-electrode system, the deposition time is 20min, the bias voltage is -0.5V, FTO is used as the working electrode, Pt is the counter electrode, and SCE is the reference electrode;

[0027] (2) Immerse the sample prepared in step (1) in 5°C, 1mol / L NaOH and 0.05mol / L K 2 S 2 o 8 Etched in the mixed solution of FTO glass for 60min, until there is no Cu(OH) on the surface of FTO glass 2 After generation, take it out, rinse with distilled water, and blow dry;

[0028] (3) Anneal the sample prepared in step (2) at 500°C for 4h in nitrogen, with a heating rate of 2...

Embodiment 2

[0035] A preparation method of three-dimensional branched nano CuO, comprising the following steps:

[0036](1) Prepare a Cu thin film by electrochemical deposition on the cleaned FTO surface, the deposition time is 25min, and other conditions are the same as step (1) in Example 1;

[0037] (2) Immerse the sample prepared in step (1) in 5°C, 0.5mol / L NaOH and 0.02mol / L K 2 S 2 o 8 Etched in the mixed solution of FTO glass for 60min, until there is no Cu(OH) on the surface of FTO glass 2 After generation, take it out, rinse with distilled water, and blow dry;

[0038] (3) Anneal the sample prepared in step (2) at 550°C for 3h in nitrogen, with a heating rate of 3°C / min, to obtain CuO nanowires;

[0039] (4) The sample obtained in step (3) was sputtered with a single Cu thin film on its surface by magnetron sputtering; during the sputtering process, copper simple substance was used as the cathode target, and the prepared CuO nanowire was used as the anode, vacuum Nitrogen g...

Embodiment 3

[0042] A preparation method of three-dimensional branched nano CuO, comprising the following steps:

[0043] (1) Prepare a Cu thin film by electrochemical deposition on the cleaned FTO surface, the deposition time is 30min, and other conditions are the same as step (1) in Example 1;

[0044] (2) Immerse the sample prepared in step (1) in 10°C, 1.0mol / L NaOH and 0.05mol / L K 2 S 2 o 8 Etched in the mixed solution of FTO for 60min, until there is no Cu(OH) on the surface of FTO 2 After generation, take it out, rinse with distilled water, and blow dry;

[0045] (3) Anneal the sample prepared in step (2) at 600°C for 2h in nitrogen, with a heating rate of 4°C / min, to obtain CuO nanowires;

[0046] (4) The sample obtained in step (3) was sputtered with a single Cu thin film on its surface by magnetron sputtering; during the sputtering process, copper simple substance was used as the cathode target, and the prepared CuO nanowire was used as the anode, vacuum 10 Pa of nitrogen ga...

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Abstract

The invention discloses a preparation method of three-dimensional dendritic nano CuO, belonging to the technical field of preparation of semiconductor nano materials. The preparation method comprises the following steps: firstly, performing electrochemical deposition on FTO glass of a conductive base to obtain a Cu film; secondly, performing chemical etching on the film to obtain Cu(OH)2; and finally, performing high-temperature annealing, magnetron sputtering and chemical etching on the Cu(OH)2 in a nitrogen atmosphere to obtain the three-dimensional dendritic nano CuO. According to the preparation method disclosed by the invention, the preparation process is simple and safe, and the energy consumption is relatively low; the three-dimensional dendritic nano CuO prepared by adopting the method disclosed by the invention is high in crystallinity, good in crystal form and high in sample purity; and the whole preparation process avoids addition of an organic matter and generation of toxic and harmful substances, and cannot cause pollution to the environment and cannot harm human health, so that the preparation method has certain promotion and application values.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and in particular relates to a preparation method of three-dimensional dendritic nano CuO. Background technique [0002] Nano-CuO is a p-type semiconductor material with a band gap of 1.5eV, and it is also a good photosensitive material. Its infrared absorption peak has obvious blue-shift phenomenon, which can be used in practical applications to prepare band-controllable light-absorbing materials, so it shows good performance in microwave absorption, radar wave absorption, stealth fighter coating, etc. Application prospect. Nano-CuO has magnetic properties that conventional coarse-grained materials do not have. Each unit cell contains 4 CuO units, which is a diamagnetic semiconductor. As a photocatalyst, nano-CuO has a good photocatalytic degradation effect on rhodamine and other organic dyes. At the same time, due to the influence of small size effect, macrosco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G3/02
CPCC01G3/02C01P2002/72C01P2004/03C01P2004/30C01P2006/40
Inventor 卢小泉李洋秦冬冬权晶晶贺彩花王秋红段世芳耿园园
Owner 盐城市明亮机械有限公司