A kind of p-type zngesno amorphous oxide semiconductor thin film and preparation method thereof
An amorphous oxide, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve good material properties, good performance, and the effect of promoting development
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Embodiment 1
[0025] (1) With high purity ZnO, GeO 2 and SnO 2 Powder as raw material, mixed, ground, at 900°C O 2 Sintering under the atmosphere to make ZnGeSnO ceramic sheet as the target material, in which the atomic ratio of Zn, Ge and Sn is 1:1:1;
[0026] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 1×10 -3 Pa;
[0027] (3) Pass into O 2 As the working gas, the gas pressure is 4 Pa, and the substrate temperature is 500 °C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature under the atmosphere to obtain p-type ZnGeSnO 5 Amorphous thin film.
[0028] Using quartz as the substrate, p-type ZnGeSnO was prepared according to the above growth steps 5 The film was tested for its structure, electrical and optical properties. The te...
Embodiment 2
[0031] (1) With high purity ZnO, GeO 2 and SnO 2Powder as raw material, mixed, ground, at 1000°C O 2 Sintering under atmosphere to make ZnGeSnO ceramic sheet as target material, in which the atomic ratio of Zn, Ge and Sn is 1:0.5:0.5;
[0032] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 1×10 -3 Pa;
[0033] (3) Pass into O 2 As the working gas, the gas pressure is 1 Pa, and the substrate temperature is 25°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film to obtain p-type ZnGe 0.5 sn 0.5 o 3 Amorphous thin film.
[0034] Using quartz as the substrate, p-type ZnGe was prepared according to the above growth steps 0.5 sn 0.5 o 3 The film was tested for its structure, electrical and optical properties. The test results are: the film is amorphous, with ...
Embodiment 3
[0037] (1) With high purity ZnO, GeO 2 and SnO 2 Powder as raw material, mixed, ground, at 1000°C O 2 Sintering under the atmosphere to make ZnGeSnO ceramic sheet as the target material, in which the atomic ratio of Zn, Ge and Sn is 1:1.5:1.5;
[0038] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 1×10 -3 Pa;
[0039] (3) Pass into O 2 As the working gas, the gas pressure is 1 Pa, and the substrate temperature is 200 °C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature under the atmosphere to obtain p-type ZnGe 1.5 sn 1.5 o 7 Amorphous thin film.
[0040] Using quartz as the substrate, p-type ZnGe was prepared according to the above growth steps 1.5 sn 1.5 o 7 The film was tested for its structure, electrical a...
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